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Breakdown voltage

About: Breakdown voltage is a research topic. Over the lifetime, 18395 publications have been published within this topic receiving 213377 citations.


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01 Jan 1953
TL;DR: In this paper, a collection of individual works on electrical discharges is presented, including fundamental processes in the electrical breakdown of gases, vacuum breakdown, spark breakdown in uniform fields, corona discharge, and burst in non-uniform fields.
Abstract: A collection of individual works on electrical discharges is presented. Topics covered include: fundamental processes in the electrical breakdown of gases; vacuum breakdown; spark breakdown in uniform fields; corona discharge; spark breakdown in non-uniform fields; breakdown voltage characteristics; irradiation and time lags; high-frequency breakdown of gases; laser-induced electrical breakdown of gases; spark channels; and electrode phenomena. (GHT)

1,355 citations

Journal ArticleDOI
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
Abstract: We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a semi-insulating β-Ga2O3 (010) substrate by molecular-beam epitaxy. We fabricated a circular MESFET with a gate length of 4 μm and a source–drain spacing of 20 μm. The device showed an ideal transistor action represented by the drain current modulation due to the gate voltage (VGS) swing. A complete drain current pinch-off characteristic was also obtained for VGS < −20 V, and the three-terminal off-state breakdown voltage was over 250 V. A low drain leakage current of 3 μA at the off-state led to a high on/off drain current ratio of about 10 000. These device characteristics obtained at the early stage indicate the great potential of Ga2O3-based electrical devices for future power device applications.

1,273 citations

Journal ArticleDOI
TL;DR: In this paper, a review is presented of the point defect model for the growth and breakdown of passive films on metal and alloy surfaces in contact with aqueous solutions, and the model provides a reasonable account of the steady-state properties of cation-conducting and anionconducting barrier layers on nickel and tungsten, respectively, in phosphate buffer solutions.
Abstract: In this paper a review is presented of the point defect model (PDM) for the growth and breakdown of passive films on metal and alloy surfaces in contact with aqueous solutions. The model provides a reasonable account of the steady-state properties of cation-conducting and anion-conducting barrier layers on nickel and tungsten, respectively, in phosphate buffer solutions; of the impedance characteristics of passive films on nickel; of the breakdown of passive films on a wide range of metals and alloys; of the distributions in the breakdown parameters (breakdown voltage and induction time); of the role of alloying elements in enhancing the resistance of alloys to passivity breakdown; of transpassive dissolution and electro-polishing; of erosion-corrosion; and of photoinhibition of pit nucleation. Additionally, the PDM has allowed us to formulate a set of principles for designing new alloys and has led to the development of a deterministic method for predicting localized corrosion damage functions.

1,148 citations

Journal ArticleDOI
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
Abstract: The drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined. Using these values, the output characteristics of the devices are calculated and compared with those of Si devices. It is found that due to very low drift region resistance, 5000-V SiC Schottky rectifiers and power MOSFETs can deliver on-state current density of 100 A/cm/sup 2/ at room temperature with a forward drop of only 3.85 and 2.95 V, respectively. Both devices are expected to have excellent switching characteristics and ruggedness due to the absence of minority-carrier injection. A thermal analysis shows that 5000-V, 6H-, and 3C-SiC MOSFETs and Schottky rectifiers would be approximately 20 and 18 times smaller than corresponding Si devices, and that operation at higher temperatures and at higher breakdown voltages than conventional Si devices is possible. Also, a significant reduction in the die size is expected. >

1,079 citations

Journal ArticleDOI
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Abstract: We have developed a normally-off GaN-based transistor using conductivity modulation, which we call a gate injection transistor (GIT). This new device principle utilizes hole-injection from the p-AlGaN to the AlGaN/GaN heterojunction, which simultaneously increases the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits a threshold voltage of 1.0 V with a maximum drain current of 200 mA/mm, in which a forward gate voltage of up to 6 V can be applied. The obtained specific ON-state resistance (RON . A) and the OFF-state breakdown voltage (BV ds) are 2.6 mOmega . cm2 and 800 V, respectively. The developed GIT is advantageous for power switching applications.

855 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023223
2022507
2021404
2020532
2019694
2018636