About: Breakdown voltage is a(n) research topic. Over the lifetime, 18395 publication(s) have been published within this topic receiving 213377 citation(s).
Papers published on a yearly basis
01 Jan 1953
Abstract: A collection of individual works on electrical discharges is presented. Topics covered include: fundamental processes in the electrical breakdown of gases; vacuum breakdown; spark breakdown in uniform fields; corona discharge; spark breakdown in non-uniform fields; breakdown voltage characteristics; irradiation and time lags; high-frequency breakdown of gases; laser-induced electrical breakdown of gases; spark channels; and electrode phenomena. (GHT)
Abstract: The drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined. Using these values, the output characteristics of the devices are calculated and compared with those of Si devices. It is found that due to very low drift region resistance, 5000-V SiC Schottky rectifiers and power MOSFETs can deliver on-state current density of 100 A/cm/sup 2/ at room temperature with a forward drop of only 3.85 and 2.95 V, respectively. Both devices are expected to have excellent switching characteristics and ruggedness due to the absence of minority-carrier injection. A thermal analysis shows that 5000-V, 6H-, and 3C-SiC MOSFETs and Schottky rectifiers would be approximately 20 and 18 times smaller than corresponding Si devices, and that operation at higher temperatures and at higher breakdown voltages than conventional Si devices is possible. Also, a significant reduction in the die size is expected. >
Abstract: In this paper a review is presented of the point defect model (PDM) for the growth and breakdown of passive films on metal and alloy surfaces in contact with aqueous solutions. The model provides a reasonable account of the steady-state properties of cation-conducting and anion-conducting barrier layers on nickel and tungsten, respectively, in phosphate buffer solutions; of the impedance characteristics of passive films on nickel; of the breakdown of passive films on a wide range of metals and alloys; of the distributions in the breakdown parameters (breakdown voltage and induction time); of the role of alloying elements in enhancing the resistance of alloys to passivity breakdown; of transpassive dissolution and electro-polishing; of erosion-corrosion; and of photoinhibition of pit nucleation. Additionally, the PDM has allowed us to formulate a set of principles for designing new alloys and has led to the development of a deterministic method for predicting localized corrosion damage functions.
Abstract: We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a semi-insulating β-Ga2O3 (010) substrate by molecular-beam epitaxy. We fabricated a circular MESFET with a gate length of 4 μm and a source–drain spacing of 20 μm. The device showed an ideal transistor action represented by the drain current modulation due to the gate voltage (VGS) swing. A complete drain current pinch-off characteristic was also obtained for VGS < −20 V, and the three-terminal off-state breakdown voltage was over 250 V. A low drain leakage current of 3 μA at the off-state led to a high on/off drain current ratio of about 10 000. These device characteristics obtained at the early stage indicate the great potential of Ga2O3-based electrical devices for future power device applications.
01 Jan 1987
Abstract: Carrier Transport Physics Breakdown Voltage Power Junction Field-Effect Transistors Power Field-Controlled Diodes Power Metal-Oxide-Semiconductor Field Effect Transistors Power MOS-Bipolar Devices New Rectifier Concepts Synopsis References Index
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