Showing papers on "Breakdown voltage published in 1969"

Method of manufacturing semiconductor integrated circuits

Abstract: A semiconductor integrated circuit is manufactured by forming a plurality of circuit elements in a semiconductor substrate, covering the circuit elements with an insulating film except exposed portions thereof, forming a first conductive path on the insulating film, at least a portion of the first conductive path overlaying predetermined portions of the circuit elements and electrically connected therewith, applying a second insulating film on the first conductive path, forming a second conductive path to overlay the first conductive path and applying a breakdown voltage across the first and second conductive paths to breakdown the second insulating film interposed therebetween via a circuit element, thus electrically interconnecting the first and second conductive paths.

Write once read only store semiconductor memory

Abstract: A read only memory having the capability of being written into once after manufacture. The cells of the memory are capable of being fused or permanently altered by directing a fusing current to the selected cells. The cell is a monolithic semiconductor device comprising a diode to be biased in a forward direction and a diode to be biased in the reverse direction structured so as to form back-to-back diodes. The reverse diode has a lower reverse breakdown voltage than the forward diode, and a metal connection, unconnected to any remaining circuit elements contacts the semiconductor device between diode junctions. The fusing current causes a metal-semiconductor alloy to form and short out the reverse diode.

A method for heat flow resistance measurements in avalanche diodes

Abstract: Avalanche transit time oscillators are operating at power densities approaching 106W/cm2, unprecedented in semiconductor device history. At such power densities, heat flow resistance problems at the interface between the flip-chip mounted silicon chips and the metal substrate, as well as between the package and the heat sink, are extremely critical. This paper describes a new, nondestructive and accurate method of measuring the heat flow resistance between junction and heat sink by utilizing the temperature dependent breakdown voltage V b (T) as a conveniently built-in temperature sensor. Variations in junction temperature ΔT with power ΔP= V b ΔI are, therefore, related to variations in breakdown voltage ΔV b with current ΔI resulting in a contribution to the electrical small signal resistance of the diode. This thermal resistance contribution R th can be separated readily from spreading and space charge resistance R ap and R sc because of the frequency dependence of R th (ω). Furthermore, the frequency dependence of R th (ω) allows the separation of heat flow resistance contributions originating in the immediate vicinity of the junction (Si-metal interface) from contributions originating at a poor thermal contact between package and heat sink. In keeping with calculations on simplified geometrical configurations, for which analytical solutions of the frequency dependent heat flow in a distributed circuit could be obtained, experimental results are presented which indicate that both heat flow resistance contributions can be extracted and separated with sufficient accuracy from as few as three electrical resistance measurements, e.g., at dc, 100 Hz, and 1 MHz. The simplicity of such measurements and their evaluation make this technique ideal for in-line testing of production devices.

Electroluminescence, Bistable Switching, and Dielectric Breakdown of Nb2O5 Diodes

Abstract: Nb–Nb2O5–metal diodes, after voltage breakdown, exhibit current-controlled negative resistance and switching between two stable conduction states. Before breakdown, Nb–Nb2O5–Au diodes are electroluminescent with hole injection occurring at the Nb2O5–Au interface. After breakdown, electroluminescence is closely related to switching. The energy of emitted radiation has maxima at 1.3 and 1.6 eV. Electroluminescence is both polarity- and voltage-dependent, indicating that hole injection, not heating, produces electroluminescence. Increased electroluminescence accompanies diode switching. Microscopic observation shows that bistable switching and dielectric breakdown of Nb–Nb2O5–Au diodes occur at small conducting regions in the oxide. Destructive dielectric breakdown in Nb–Nb2O5–Cu diodes differs from that in Nb–Nb2O5–Au diodes.

Breakdown of Gases Below Paschen Minimum: Basic Design Data of High-Voltage Equipment

Abstract: For the region pd<(pd)min, breakdown characteristics U2 = f(pd) are presented for both the noble and the more important molecular gases He, Ne, A, Kr, Xe, N2, H2, NH3, air, CO2, O2 (and Hg), particularly giving the probability of breakdown on which they are based, so that they can be used for dimensioning the relevant equipment. The design of vessel and electrode geometry which were introduced to determine these characteristics, and which have been tested up to a peak voltage of several hundred kilovolts, made it possible to study and describe the shape of the breakdown and flashover voltages relative to one another at pressures down to high vacuum (region of vacuum breakdown). They also provide an overall picture of the constructional facilities existing within the four following regions of ultimate stress, in which the breakdown voltage is determined by the ultimate electrical stressing of 1) the electrode surface (vacuum breakdown), 2) the insulator inside wall (internal flashover), 3) the insulator outside wall (external flashover), and 4) the gas path (Paschen breakdown). To express the probability of breakdown between 100 percent certainty (W = 1) and complete freedom from breakdown (W = 0), Poisson's formula may be used for the various breakdown mechanisms, i. e., for values of pd close to the respective kink and in the kinked part of the lefthand leg of the Paschen curve (regions 1-4 in Fig. 2), the value ?being proportional to the peak value of the applied voltage U.

Modeling of emitter capacitance

Abstract: A modified emitter transition layer capacitance representation is given which is free of singularities and allows modeling of the capacitance for voltages up to the "built-in" voltage.

Electrical Pulse Breakdown of Silicon Oxide Films

Abstract: Pulse breakdown tests on individual specimens with self‐healing breakdowns resulted in information on both the thermal and the electric breakdown properties. Thermal breakdown due to Joule heat was found to occur nearly uniformly over the whole specimen at voltages generally lower than the electric breakdown. voltages. Calculations with relations derived for the thermal breakdown field agreed well with observations showing increase of breakdown field with decreasing pulse duration. Electric breakdown was found to be a chance event producing breakdown holes tens of microns in diameter. The process was interpreted to consist of three consecutive stages: (1) the field produces a very small charge pulse causing a temperature rise of a few hundred degrees centigrade in a breakdown channel; (2) this induces thermal runaway in the channel; and (3) the energy stored in the specimen discharges through the channel causing destruction. The magnitude of the charge pulse, duration of the process, and the size of the b...

RF voltage breakdown in coaxial transmission lines

Abstract: Data have been obtained for RF voltage breakdown in air for the 50 Ω coaxial transmission line configuration and are presented in a unified, concise, and practical plot.

THE INTRODUCTION OF CHARGE IN SiO2 AND THE INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER‐BASE JUNCTION OF GATED TRANSISTORS

Abstract: The increase (degradation) of the base current after breakdown of emitter‐base junction was studied on silicon planar NPN transistors, with a field electrode (gate) on top of the emitter‐base junction. We found that breakdown with a gate voltage positive with respect to the base gave rise to negative charge in the oxide. The place of the maximum in the degraded base current vs gate voltage is shown to be a strong function of the reverse current density.

Low-temperature epitaxial growth of doped silicon films and junctions

Abstract: Studies of the structural and electrical properties of homo-epitaxial silicon films and junctions deposited at low temperatures by ultra-high vacuum sublimation have been made. Spreading resistance measurements of epitaxial layers sublimed from boron- and phosphorus-doped silicon sources have shown that films of known and uniform impurity concentrations could be deposited. Fault-free epitaxial layers have been grown on (111) at temperatures above 650°C, and on (100) at temperatures down to 500°C. Excellent silicon junction structures have been achieved at temperatures far lower than heretofore reported as demonstrated by junctions comprising 0.05 Ω-cm, P -type silicon epitaxial layers on 1.5 Ω-cm N -type, (100) substrates. These junctions, which in general show abrupt impurity profiles, are characterized by low reverse leakage currents and sharp voltage breakdowns close to the theoretical breakdown voltage anticipated from measured resistivity data. Minority carrier lifetimes ranging from 4 to 8 μsec have been measured by the carrier decay technique. The detrimental effects of substrate out-diffusion (resulting from the elevated temperatures used for cleaning the substrate surface prior to deposition) can be avoided by the sequential deposition of all-epitaxial junction structures. P + N − on N epitaxial structures with good junction properties have successfully been formed from highly P - and lightly N -doped sources.

Radiation Effects on Silicon Schottky Barriers

Abstract: Because of a variety of important new applications, it is desirable to determine the effects of radiation on silicon Schottky barrier diodes. In the present study, both neutron and low-energy electron irradiation were employed and a variety of Schottky diode structures were investigated. These included the p-n junction guard ring structure and a gate-controlled structure which was used to separate surface from bulk effects. The two main effects of low-energy electron irradiation are: increase of surface recombination velocity and buildup of a positive space charge in the oxide. These results are consistent with previous studies of p-n junction diodes. For Schottky diodes without gate electrodes, the breakdown voltage is decreased and some excess current is present at low forward bias after irradiation. The effects of nuclear irradiation are (in addition to the surface effects mentioned above): decrease of bulk lifetime and carrier removal, again consistent with previous studies on p-n junction devices. Recombination-generation current increases manyfold due to the decrease in lifetime after irradiation. This component of current is important for Pt Schottky diodes which have a high barrier (0.85 eV). However, for Al diodes, since the barrier is relatively low (0.69 eV) and the thermionic emission current relatively high, recombination-generation current is not important until very high neutron dosage.

Starting device for discharge lamp including semiconductors preheating and starting circuits

Abstract: A discharge lamp starter device which comprises a serial circuit constituted by a reverse blocking diode thyristor or a bilateral diode thyristor and a diode, the breakdown voltage VBO of the thyristor being lower than the rated source voltage but higher than the terminal voltage of a fluorescent discharge tube while the blocking voltage VR of the thyristor having a sufficiently great value with respect to the breakdown voltage VBO, and a pulse generator circuit constituted by a pulse transformer, a capacitor and a bilateral diode thyristor, the two circuits being connected in parallel with the fluorescent discharge tube to thereby instantaneously start the fluorescent discharge tube.

AVALANCHE BREAKDOWN VOLTAGE OF GaAs p+‐n‐n+ DIODE STRUCTURES

Abstract: The ionization rates of GaAs are first empirically determined from breakdown voltage measurements of p+‐n junctions with thick n layers. The theoretical analysis is then extended to p+‐n‐n+ structures in which space‐charge punch‐through occurs before breakdown takes place. The avalanche breakdown voltages of GaAs p+‐n‐n+ diode structures are calculated as a function of the n layer thickness W as well as the doping density n. Comparison of the theoretical calculation with experimental data shows very good agreement.

Junction capacitance component, especially for a monolithic microcircuit

Abstract: This is a junction capacitance component which can be simultaneously formed with other planar transistors on a monolithic integrated circuit. The capacitance component achieves an improved specific capacity for the same voltage breakdown by forming an intermediate region between a wafer and an epitaxial layer, said layer containing a highly doped emitter region base and collector regions, and a highly doped region which extends from said emitter, through said base and collector to, and within the marginal area of, said intermediate region.

Voltage measurement in current zero investigations

Abstract: • A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers.

Mosic with protection against voltage surges

Abstract: A circuit for protecting a metal-insulator semiconductor integrated circuit (MOSIC) against voltage surges is described. The circuit utilizes a diffused PN junction connected between the gate of an input MOS transistor and the source voltage in such a manner that the control voltage applied to the gate reverse biases the PN junction, which then functions as a Zener diode. The circuit may include a diffused resistance between the gate and the source voltage, or between the gate and an input terminal to protect either the diode, or the gate, or both against heavy current levels. Two or more diodes can be connected back to back to provide a higher breakdown voltage and permit higher control voltage signals to be used.

Observation of the current and voltage waveforms of the Si IMPATT diode

Abstract: Current and voltage waveforms of the Si IMPATT diode were observed directly by means of the oscillating circuit using microstrip line. The results indicate that the conventional small-signal theory cannot be applied to the observed type of oscillation. The oscillation starts at the bias voltage just above the breakdon voltage of the diode; then along with its buildup, the bias voltage is lowered owing to the auto-bias effect, to reach a steady value considerably below the breakdown voltage. Large amplitude oscillation of high efficiency is expected over a wide frequency range.

Liquid-filled transformer with foamed insulation

Abstract: Electrical inductive apparatus of the type containing a magnetic core-winding assembly immersed in a liquid-insulating material. The breakdown voltage of predetermined insulating gaps in the apparatus is increased, while maintaining substantially the same dielectric constant across the gap as that of the liquidinsulating material, by disposing an open cell-insulating foam material in the predetermined gaps. The open cells of the foam material are impregnated or filled with the liquid-insulating material, which increases the breakdown voltage in volts per mil across the gap.

Junction Temperatures under Breakdown Condition

Abstract: A method of determining the junction temperature under breakdown condition is described. The junction temperature T1 is calculated from the applied voltage and the current in the following equation: V1=VB0{1+β(T1-T0)}+I1ρsc0{1+γ(T1-T0)}, where V1 and I1 are the applied voltage and current, VB0 and ρsc0 are the breakdown voltage and the space charge resistance at the ambient temperature T0, and β and γ are the temperature coefficients of VB and ρsc, respectively. Based on this method, the burn-out temperatures of mesa-type Si p+–n junction diodes are found to be between 200~300°C. The cause of burn-out at such a low temperature is also discussed.

Electrical suppression of avalanche currents in semiconductor junctions

Abstract: Avalanche currents in the majority of semiconductor junctions can be suppressed by a ‘quenching technique.’ Use is made of the finite turn-on delay of the avalanche current after an applied voltage exceeds the breakdown voltage. A periodically varying bias voltage will effectively suppress the avalanche current provided it extinguishes the avalanche during each cycle and has a period short compared to the average turn-on delay. This keeps the average avalanche current at a low level. The allowed amplitude range of the quenching signals is found to increase with the avalanche breakdown voltage of the diodes. Measurements of the average avalanche current versus quenching frequency yield values for the turn-on probability of the avalanche. The turn-on probability increases exponentially for voltages above breakdown until saturation sets in. At even higher overvoltages the turn-on rate increases again so that a discharge starts during each cycle. A properly adjusted quenching voltage will not only suppress microplasmas in diodes which contain microplasmas but will also increase the uniformity of breakdown in diodes without microplasmas. Application of the quenching principle to avalanche photodiodes, especially to those containing microplasmas, can significantly increase the gain of the photocurrent. In typical guard ring diodes with microplasmas, current gain improvements at low frequencies by factors of 10–100 were found.

An investigation of the electrical breakdown of a plasma - electrode system

Abstract: Electrical breakdown between a pair of electrodes immersed in a flowing plasma corresponds to the transition between low- and high-current conduction r?gimes and has been attributed to many causes. In the work reported here, which involved cold electrodes in contact with the plasma produced by an electromagnetic shock tube, it was found that the minimum breakdown voltage corresponded to an average electric field in the cathode sheath of about 2 MV cm?1 over a wide range of plasma conditions. This was probably adequate to initiate the formation of non-thermionic cathode spots, and the voltage-current characteristics in the high-current r?gime were consistent with a field-emission theory of this mechanism, originally suggested by Smy. Moreover, electric fields in the plasma, sheath thicknesses and mean free paths were such that alternative explanations of the high-current r?gime were reasonably eliminated.

Noise Spectral Density as a Diagnostic Tool for Reliability of p-n Junctions

Abstract: The feasibility of choosing noise-voltage spectral density as a prediction parameter for the degradation of p-n junctions has been examined both theoretically and through a series of life-tests. Experimental facts show that the noise-voltage spectral density, Sv(w), observed in a p-n junction under the breakdown condition tends to be \"white\" (which contra­ dicts the 1/f-noise theory), and Sv(w) is inversely proportional to the breakdown current (which contradicts the shot-noise theory). Furthermore, some p-n junctions display one or more multiple peaks of Sv(w) at different current levels which can not be explained by any of the existing noise theories. In the derivation of a new theory, four factors are proposed to explain the behavior of Sv (w). They are: (1) the number of primary carriers entering the multi­ plication zone during the given time interval is a random variable, (2) the entry times of primary carriers into the multiplication zone-is a random variable, (3) the number of impact ionization events caused by a primary carrier is a random variable, and (4) the carrier transit times are statistically distributed. The noise current due to the above mentioned multi­ fold random processes is approximated by an ensemble of a triangular current pulses, and the Wiener-Khintchine theorem is applied to the autocorrelation function of 2 —1 the noise current to obtain Sv(w)cx:V^I1, where is the breakdown voltage, and I is the breakdown current. This new theory can explain both inverse proportionality between Sv(w) and I as well as white noise spectrum of Sv(w). It has been shown that the multiple-peak phenomenon found in some units is due to the microplasmic breakdown channels in a p-n junction. To demonstrate this fact, a microplasma-free, and a microplasmic breakdown channel were simulated by two diodes in parallel, and the difference in the breakdown voltages of two channels was externally inserted in series with a diode. Experimental evidence was obtained that one can generate artificially multiple-peak phenomenon from the above two-channel model. Life-test experiments indicate that units whose S (w) have multiple peaks are highly correlated with degradation of leakage characteristic over a life-test period. It is recommended that some unreliable units be eliminated by inspecting the multiple-peak phenomenon which indicates the existence of microplasmic breakdown channels in a p-n junction.

Depletion layer capacitor in particular for monolithic integrated circuits

Abstract: This is a depletion layer capacitor which can be simultaneously formed with other planar transistors on a monolithic integrated circuit. The depletion layer capacitor achieves a high voltage breakdown by producing a PN junction which joins two highly doped regions of opposite conductivity type wherein said junction is established within an epitaxial layer of lower impurity concentration and doesn''t extend to the surface of said epitaxial layer.

Power amplification with anomalous avalanche diodes

Abstract: The experiment described in this paper is performed for the purpose of obtaining additional information that might help to elucidate the operating principle of the anomalous mode. The diodes under investigation are of a silicon p/sup +/-n-n/sup +/ mesa structure. The breakdown voltage is 160 volts; the punch-through voltage is 60 volts. The test setup is similar to a conventional reflection-type amplifier with the diode mounted in a coaxial-cavity-like circuit. The reverse-bias pulse drives the diode to a low avalanche current level at which anomalous operation would normally commence. In this case, however, the tuning and loading of the cavity and its associated stubs is intentionally arranged to minimize free-running oscillations. Any residual RF power is reduced to the level of weak instabilities without any strong harmonics or subharmonic. Only in the presence of an input driving power with a frequency at or near the resonance frequency of the system, does an amplified power of the same frequency appear at the output port. Starting from the residual level the output power increases proportionally with the input power until at higher drives a saturation level is reached. In this particular case, operating at 410 MHz, saturation is reached at 18.5 watts with a maximum power gain of 12 dB and a bandwidth of 26 MHz. This output is approximately 20 to 30 dB higher in amplitude than any observable peak in the residual broad-band frequency spectrum Operating the diode as a free-running "hard" oscillator at the same current level and frequency, 18.8 Watts of RF power is obtained. The initial and steady-state power levels are substantially the same for both amplifier and oscillator. A plausible evaluation of these results can be obtained following van der Pol's differential equation for a forced negative-resistance oscillator.

Interpretation of Destructive Breakdown in Thin Dielectric Films

Abstract: Klein and Gafni have phenomenologically classified breakdown in thin-film capacitors as “single hole,” “propagating,” and “maximum voltage.” Maximum-voltage breakdown, which is supposed to yield the ultimate dielectric strength of the bulk dielectric, is here investigated by adding to the test circuit of Klein and Gafni, a silicon-controlled rectifier that removes the applied voltage within a few microseconds of the occurrence of breakdown. It is shown that maximum-voltage breakdown is initiated as a single-hole breakdown and that total destruction occurs through a series of consecutive breakdowns, each of which is localized and similar to other single-hole breakdowns. The negative resistance region that precedes maximum-voltage breakdown is believed incidental, not causative.

Similarity in air and nitrogen I. Breakdown voltages

Abstract: Measurements of the static breakdown voltage Vs of air and nitrogen have been made under uniform field conditions for values of N in the range 165×1019-99×1019 cm−3 and 033×1020 less-than-or-eq, slant Nds less-than-or-eq, slant 264×1020 cm−2 (N is the gas number density and ds the sparking distance.) The measurements show that Paschen's Law, Vs=f(Nds), is obeyed in nitrogen, but an interesting deviation is revealed in air. The observed deviations from Paschen's Law are in good agreement with the deviations which were calculated by Daniel et al. in 1969 from measurements of the spatial growth of pre-breakdown ionization currents.

Measurement of field effect transistor pinch-off voltage

Abstract: A test circuit for determining the pinch-off voltage of a field effect transistor comprises, in series, a source of unidirectional voltage of a magnitude greater than the expected pinch-off voltage and less than the breakdown voltage, the source and drain electrodes respectively of the field effect transistor under test, and a resistance element of relatively large magnitude, typically, at least one megohm. The gate electrode is grounded and observation of the voltage drop across the resistance element gives a reading differing from theoretical pinch-off voltage by only a small percentage.

Planar zener diodes having uniform junction breakdown characteristics

Abstract: A high-voltage planar Zener diode in which enhanced switching performance is provided by a unique junction configuration. The junction is configured to provide low-series resistance and uniform conduction across a controlled region of the junction thereby to achieve uniform and sharp voltage breakdown characteristics.

The Traveling-Wave Approach to Transient Recovery Voltage

Abstract: Methods are presented for the calculation of circuit-breaker transient recovery voltage. The initial portion of the transient is treated as a traveling wave that is reflected from line terminations back to the breaker, adding to the original voltage wave. A number of refinements in reflection coefficients are considered, each successively increasing the accuracy of the result. The assumptions used in the approach result in a conservative approximation of the actual transient recovery voltage.

Avalanche Breakdown Voltages in Punch-Through Si Epitaxial Planar Schottky Barrier Diodes

Abstract: Avalanche breakdown voltages in punch-through epitaxial Schottky barrier diodes have been calculated by the computor more fundamentally than previously reported by the author. And the experimental results obtained in this paper by introducing a new technique–Insertion of Channel-Stopping Guard Space–have approached to this theoretical limit.