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Showing papers on "Breakdown voltage published in 2000"


Journal ArticleDOI
TL;DR: In this paper, the breakdown of argon, nitrogen, air and oxygen in a uniform dc electric field at different discharge gaps L, discharge tube radii R and cathode materials was studied.
Abstract: This paper studies in experiment and theory the breakdown of argon, nitrogen, air and oxygen in a uniform dc electric field at different discharge gaps L, discharge tube radii R and cathode materials. At arbitrary geometric dimensions of the cylindrical discharge vessel and cathode materials the ratio of the breakdown electric field value to the gas pressure p at the minimum of the breakdown curves is shown to remain constant, (Edc/p)min≈constant. A modified breakdown law for the low-pressure dc discharge Udc = f(pL,L/R) is obtained. That is, the breakdown voltage Udc is shown to depend not only on the product pL, but also on the ratio L/R. A method is presented enabling one to predict a dc breakdown curve in the cylindrical discharge vessel possessing arbitrary L and R values from the measured data on the dc breakdown.

154 citations


Patent
13 Oct 2000
TL;DR: In this paper, the voltage between the corona electrodes and the exciting electrodes is maintained between the onset voltage and the breakdown voltage with a flexible top high-voltage power supply.
Abstract: An electrostatic fluid accelerator having a multiplicity of closely spaced corona electrodes (1). The close spacing of such corona electrodes (1) is obtainable because such corona electrodes (1) are isolated from one another with exciting electrodes (2). Either the exciting electrode (2) must be placed asymmetrically between adjacent corona electrodes (1) or an accelerating electrode must be employed. The accelerating electrode can be either an attracting (13) or a repelling electrode (19). Preferably, the voltage between the corona electrodes (1) and the exciting electrodes (2) is maintained between the corona onset voltage and the breakdown voltage with a flexible top high-voltage power supply. Optionally, however, the voltage between the corona electrodes (1) and the exciting electrodes (2) can be varied, even outside the range between the corona onset voltage and the breakdown voltage, in order to vary the flow of fluid. And, to achieve the greatest flow of fluid, multiple stages (28, 29 and 30) of the individual Electrostatic Fluid Accelerator are utilized with a collecting electrode (31 or 32) between successive stages (28, 29 and 30) in order to preclude substantially all ions and other electrically charged particles from passing to the next stage (28, 29 or 30), where they would tend to be repelled and thereby impair the movement of the fluid. Finally, constructing the exciting electrode (2) in the form of a plate that extends downstream with respect to the desired direction of fluid flow also assures that more ions and, consequently, more fluid particles flow downstream.

133 citations


Journal ArticleDOI
TL;DR: In this article, the effects of carbon nanotube coating on the performance of the gas discharge tubes were measured and compared with commercial GDTs, showing that a significant reduction in the breakdown voltage and voltage fluctuation was observed for the nanotubebased gDTs as compared to typical commercial devices.
Abstract: turn-on fields. Recent experiments have reported turn-on electric fields in the range of 1.5‐3 V/mm. 3‐5 The nanotubes emitters, especially the SWNTs, are capable of producing stable electron emission with a current density exceeding 4 A/cm 2 ~Ref. 5! which make them attractive cold-cathode materials for microvacuum electronic applications. Assynthesized SWNTs are in the form of either free-standing mat or powder, unsuitable for device applications. We have processed the raw materials to uniform films by a spray method. 6 Adhesion between the substrates and the films is enhanced by introducing either a carbon-dissolving or a carbide-forming metal interlayer. In this letter, we report the effects of carbon nanotube coating on the performance of the gas discharge tubes. The direct current ~dc! breakdown voltages of GDTs fabricated using SWNT-coated electrodes were measured and compared with commercial GDTs. A significant reduction in the breakdown voltage and voltage fluctuation ~over 1000 surges! was observed for the nanotubebased GDTs as compared to typical commercial devices.

129 citations


Journal ArticleDOI
TL;DR: In this article, temperature dependence of tunnel magnetoresistance (TMR) ratio, resistance, and coercivity from 4.2 K to room temperature and applied voltage dependence of the TMR ratio and resistance at room temperature for a tunnel junction, Ta (5 nm)/Ni79Fe21 (3 nm)/Cu (20 ǫnm), etc.
Abstract: Temperature dependence of tunnel magnetoresistance (TMR) ratio, resistance, and coercivity from 4.2 K to room temperature and applied voltage dependence of the TMR ratio and resistance at room temperature for a tunnel junction, Ta (5 nm)/Ni79Fe21 (3 nm)/Cu (20 nm)/Ni79Fe21 (3 nm)/Ir22Mn78 (10 nm)/Co75Fe25 (4 nm)/Al (0.8 nm)-oxide/Co75Fe25 (4 nm)/Ni79Fe21 (20 nm)/Ta(5 nm), were investigated. TMR ratio, effective barrier height and width, and breakdown voltage of the junction can be remarkably enhanced after annealing at 300 °C for an hour. High TMR ratio of 49.7% at room temperature and 69.1% at 4.2 K were observed. The value of spin polarization of Co75Fe25, P=50.7%, deduced from the TMR ratio at 4.2 K was corresponding well to the experimental data measured at 0.2 K in a spin polarized tunneling experiment using a superconductor/insulator/ferromagnet tunneling junction.

121 citations


Proceedings ArticleDOI
10 Apr 2000
TL;DR: In this article, the authors show that hole injection does not completely account for all of the trap generation mechanisms observed during direct tunneling stress and that the anode hole injection model is still operative at low voltages.
Abstract: We have performed an experiment proving that the widely accepted E-field TDDB model is a physically incorrect description of breakdown in ultrathin gate oxides. Although interface traps are the dominant SILC mechanism below 5 V stress, breakdown remains limited by bulk trap generation and is voltage-driven. It has been recently proposed that the anode hole injection model is still operative at low voltages. Although we will show that holes do generate bulk traps and cause breakdown in ultrathin oxides, hole injection does not completely account for all of the trap generation mechanisms observed during direct tunneling stress.

117 citations


01 Mar 2000
TL;DR: In this paper, the effects of carbon nanotube coating on the performance of the gas discharge tubes were measured and compared with commercial GDTs, showing that a significant reduction in the breakdown voltage and voltage fluctuation was observed for the nanotubebased gDTs as compared to typical commercial devices.
Abstract: turn-on fields. Recent experiments have reported turn-on electric fields in the range of 1.5‐3 V/mm. 3‐5 The nanotubes emitters, especially the SWNTs, are capable of producing stable electron emission with a current density exceeding 4 A/cm 2 ~Ref. 5! which make them attractive cold-cathode materials for microvacuum electronic applications. Assynthesized SWNTs are in the form of either free-standing mat or powder, unsuitable for device applications. We have processed the raw materials to uniform films by a spray method. 6 Adhesion between the substrates and the films is enhanced by introducing either a carbon-dissolving or a carbide-forming metal interlayer. In this letter, we report the effects of carbon nanotube coating on the performance of the gas discharge tubes. The direct current ~dc! breakdown voltages of GDTs fabricated using SWNT-coated electrodes were measured and compared with commercial GDTs. A significant reduction in the breakdown voltage and voltage fluctuation ~over 1000 surges! was observed for the nanotubebased GDTs as compared to typical commercial devices.

115 citations


Patent
28 Jul 2000
TL;DR: In this paper, a silicon oxide film is formed on the side and bottom of each of the trenches, and an SIPOS film is buried into the trenches by RIE.
Abstract: A plurality of trenches are formed in a drift region between a p-type body region and an-type buffer region. A silicon oxide film is formed on the side and bottom of each of the trenches, and an SIPOS film is buried into each of the trenches. The trenches are formed by RIE, and the SIPOS film is deposited by LPCVD and an undesired portion can be removed by dry etching such as RIE. The SIPOS film is connected to a source electrode at the source end of each trench, and it is connected to a drain electrode directly or through a resistor at the drain end thereof. When a high voltage is applied, a depletion layer expands in the n-type drift region from an interface between the n-type drift region and the trench on each side of the n-type drift region, therefore, the impurity concentration of the n-type drift region can be heightened without lowering the high breakdown voltage, and the resistance of the drift region can be decreased.

107 citations


Proceedings ArticleDOI
10 Dec 2000
TL;DR: In this article, the voltage-dependence of voltage acceleration for ultra-thin oxides from 2.2 V to 5 V over a range of T/sub ox/ values from 1.7 nm to 5.0 nm was investigated.
Abstract: We report the voltage-dependence of voltage acceleration for ultra-thin oxides from 2.2 V to 5 V over a range of T/sub ox/ values from 1.7 nm to 5.0 nm. This unique behavior manifest itself as a power-law voltage-dependence for time-to-breakdown (T/sub BD/) over a variety of experimental observations. Using the concept of energy-to-breakdown, we explore the possible scenarios such as fractional energy or defect generation probability as a function of voltage to account for the increase in voltage acceleration with decreasing voltages.

103 citations


Journal ArticleDOI
01 Sep 2000
TL;DR: In this article, the breakdown voltage of micromotors and microactuators was measured for the gap range 0.5 µm to 15 µm and the shape of the curve and breakdown voltage values were found to be the same for different gases and high pressures up to 4 µm separation.
Abstract: For efficient operation, micromotors and microactuators, such as those employed in microsystems, are required to operate with high electric fields at electrode separations of the order of micrometres. An apparatus was built to accurately measure the breakdown voltage for electrode spacings as low as 0.5 µm. Breakdown voltage measurements in air and nitrogen are presented and discussed for the gap range 0.5 to 15 µm. Energy dispersive analysis of X-rays (EDAX) confirms the transfer of material from cathode to anode and vice versa during the breakdown mechanism. The Paschen law has been confirmed not to be applicable at gap settings of less than 4 µm. The shape of the curve and the breakdown voltage values are found to be the same for different gases and different high pressures up to 4 µm separation. Below this value, an analytical explanation of the breakdown voltage based on quantum tunnelling of electrons is obtained in terms of electrical field enhancement at microprotrusions and the work function of the electrode material.

100 citations


Journal ArticleDOI
TL;DR: In this article, an experimental study on the influence of an aromatic additive (pyrene) on the propagation of positive filamentary streamers and breakdown in liquid cyclohexane is presented.
Abstract: This paper presents an experimental study on the influence of an aromatic additive (pyrene) on the propagation of positive filamentary streamers and breakdown in liquid cyclohexane. Experiments are carried out in point-plane gaps up to 5 cm over a wide voltage range. With pyrene, the propagation is facilitated, and thus the breakdown voltage is lowered in point-plane geometry. Streamers also become very branched, and a much larger number of filaments propagate than in pure cyclohexane. Correlated to this, a large increase of the inception voltage of fast streamers (acceleration voltage) is observed at high voltage. This fact can be explained by macroscopic electrostatic properties of streamers, which depend on their geometrical structure. When more and more filaments propagate at high voltage they shield each other, which in turn limits their tip field (and thus velocity) at a nearly constant value over a large voltage range. The propagation velocity is thus not only determined by microscopic processes at the filament heads. Consequently, it does not always constitute an adequate parameter to directly appreciate and compare microscopic propagation processes. A discussion about streamer mechanisms is also presented.

100 citations


Journal ArticleDOI
TL;DR: The first integrated active quenching circuit (I-AQC) that drives an avalanche photodiode above its breakdown voltage, in order to detect single photons is introduced, and a compact and versatile photon-counting module is developed.
Abstract: We introduce the first integrated active quenching circuit (I-AQC) that drives an avalanche photodiode (APD) above its breakdown voltage, in order to detect single photons. Based on the I-AQC, we developed a compact and versatile photon-counting module suitable for applications in which very weak optical signals have to be detected, as for instance, photon correlation spectroscopy, luminescence measurements, and laser ranging. The prototype photon-counting module features quenching pulses up to 60 V amplitude, minimum dead time of less than 36 ns, corresponding to a saturated counting rate exceeding 25 Mcounts/s, user-controllable hold-off time, for reducing the afterpulsing effect, and nanosecond gating capability. The power dissipation is 60 mW in stand-by conditions, and the module size is less than 1 cm/spl times/2 cm.

Patent
J. Allam1
08 Nov 2000
TL;DR: In this article, the Brillouin-zone-averaged energy bandgap of a semiconductor structure can be controlled by the composition of the semiconductor used or by straining its lattice.
Abstract: Semiconductor structures and a method of forming semiconductor structures The avalanche breakdown characteristics, such as breakdown voltage and impact ionisation coefficient, of a semiconductor structure can be controlled by controlling the Brilluin-zone-averaged energy bandgap ( ) of the material forming the structure. Consequently, the avalanche breakdown characteristics of a device may be tailored independently of the bandgap Eg. The Brillouin-zone-averaged energy bandgap ( ) may be controlled by controlling the composition of the semiconductor used or by straining its lattice.

Proceedings ArticleDOI
13 Jun 2000
TL;DR: In this paper, a current limited constant voltage stress (CLVS) model is proposed to simulate circuit stress under circuit configurations, in which transistors are driven by other transistors.
Abstract: Ultra-thin oxide reliability has become an important issue in integrated circuit scaling. Present reliability methodology stresses oxides with a low impedance voltage source. This, though, does not represent the stress under circuit configurations, in which transistors are driven by other transistors. A Current Limited Constant Voltage Stress simulates circuit stress well. Limiting the current during the breakdown event reduces the post-breakdown conduction. Limiting the current to a sufficiently low value may prevent device failure, altogether.

Proceedings ArticleDOI
26 Sep 2000
TL;DR: In this article, the 1/E model best fits the time-to-breakdown data and showed that the trap generation rate is pulse-width dependent; and thus, DC data should not be used to predict the degradation rate under ESD-type stress conditions.
Abstract: Time-dependent dielectric breakdown of 2.2-4.7 nm gate oxides is investigated down to the nanosecond time regime. The so-called 1/E model best fits the time-to-breakdown data. Latent damage is also examined and it is seen that the trap generation rate, i.e. the damage rate, is pulse-width dependent; and, thus, DC data should not be used to predict the degradation rate under ESD-type stress conditions. Voltage overshoots and a slow turn-on time make LVTSCRs bad candidates for protecting the ultra-thin gate oxide against CDM stress.

Journal ArticleDOI
TL;DR: In this paper, a space-vector pulse width modulation (SVPWM) strategy was proposed to reduce the number of common mode voltage pulses in a three-phase boost rectifier/inverter system using a synchronized switching sequence.
Abstract: This paper proposes a new space-vector pulse width modulation (SVPWM) strategy that can reduce the number of common mode voltage pulses in a three-phase boost rectifier/inverter system using a synchronized switching sequence. In the proposed SVPWM strategy, it is possible to eliminate one common mode voltage pulse in every control period by shifting the active voltage vectors of the inverter to align to those of the boost rectifier. Thus, a reduction in the total number of common mode voltage pulses and RMS motor leakage current can be obtained without extra hardware. Since the proposed SVPWM strategy can be simply implemented in software, it is widely applicable regardless of the power capacity of the converter and results in no increment of converter volume, weight and price. Moreover, because the proposed SVPWM strategy maintains the magnitude of the active voltage vector required for motor control and simply changes the distribution of the zero, voltage vector, it does not effect the control performance of the power converter.

Journal ArticleDOI
TL;DR: In this paper, a high-voltage GaN vertical Schottky-barrier rectifier with a 5-μm-thick i region, and processed using reactive-ion etching, exhibited a reverse breakdown voltage of −450 V (at 10 mA/cm2) and an on-resistance of 23 mΩ
Abstract: We have fabricated and investigated high-voltage GaN vertical Schottky-barrier rectifiers grown by metalorganic chemical vapor deposition. A mesageometry Schottky-barrier rectifier having a 5-μm-thick i region, and processed using reactive-ion etching, exhibited a reverse breakdown voltage of −450 V (at 10 mA/cm2) and an on-resistance of 23 mΩ cm2. For comparison, we have also applied wet chemical etching for the fabrication of mesageometry Schottky-barrier rectifiers. The 2-μm-thick i-region GaN mesa-Schottky rectifiers showed a breakdown voltage of −310 and −280 V for wet-etched and dry-etched devices, respectively, and an on-resistance of 8.2 and 6.4 mΩ cm2, respectively. These results indicate that the performance of the wet-etched rectifiers is comparable to or better than that of comparable dry-etched devices.

Proceedings ArticleDOI
22 May 2000
TL;DR: In this paper, the integration approach followed to implement power LDMOS' up to 60 V into a 0.35 /spl mu/m process technology (BCD6) based on a CMOS plus Flash-Memory platform of equivalent lithography generation, built on a P-over P+ substrate.
Abstract: This paper presents the integration approach followed to implement power LDMOS' up to 60 V into a 0.35 /spl mu/m process technology (BCD6) based on a CMOS plus Flash-Memory platform of equivalent lithography generation, built on a P-over P+ substrate. Experimental results on LDMOS' in terms of on-state specific resistance, off and on-state breakdown voltage, frequency behavior will be described analyzing the interactions between low voltage ULSI platform and high voltage power elements.

Patent
06 Apr 2000
TL;DR: A semiconductor rectifying device which emulates the characteristics of a low forward voltage drop Schottky diode and which is capable of a variety of electrical characteristics from less than 1 A to greater than 1000 A current with adjustable breakdown voltage is presented in this article.
Abstract: A semiconductor rectifying device which emulates the characteristics of a low forward voltage drop Schottky diode and which is capable of a variety of electrical characteristics from less than 1 A to greater than 1000 A current with adjustable breakdown voltage. The manufacturing process provides for uniformity and controllability of operating parameters, high yield, and readily variable device sizes. The device includes a semiconductor body with a guard ring on one surface to define a device region in which are optionally formed a plurality of conductive plugs. Between the guard ring and the conductive plugs are a plurality of source/drain, gate and channel elements which function with the underlying substrate in forming a MOS transistor. The channel regions are defined by using the photoresist mask for the gate oxide with the photoresist mask isotropically etched to expose a peripheral portion of the gate oxide (and gate electrode) with ions thereafter implanted through the exposed gate for forming the channel region. The source/drain (e.g. source) regions can be formed by ion implantation or by out-diffusion from a doped polysilicon layer.

Patent
Kenji Kouno1, Shouji Mizuno1
26 Jul 2000
TL;DR: In this article, a new and improved power MOS transistor having a protective diode with an increased breakdown voltage difference and less sheet resistivity is disclosed, where an n-type well layer has its top surface in which an elongated p-type base region is provided adjacent to a deep n + -type region.
Abstract: A new and improved power MOS transistor having a protective diode with an increased breakdown voltage difference and less sheet resistivity is disclosed. In an up-drain type MOSFET, an n-type well layer has its top surface in which an elongated p-type base region is provided adjacent to a deep n + -type region (drain region). The p-type base region is formed so that it partly overlaps the deep n + region. A p + -type region (p-type base region) is connected to a source electrode. A surge bypassing diode D 1 is thus formed between the source and drain of the MOSFET.

Patent
14 Sep 2000
TL;DR: In this paper, the lateral RF MOS device having two drain drift regions (366, 368) and a conductive plug (361) source connection structure is disclosed, which can be used for high power and high frequency applications.
Abstract: The lateral RF MOS device having two drain drift regions (366, 368) and a conductive plug (361) source connection structure is disclosed. The usage of two drain drift regions (366, 368) results in the increased source-drain breakdown voltage and in increased maximum drain current density. The lateral RF MOS device of the present invention can be used for high power and high frequency applications.

Journal ArticleDOI
TL;DR: In this paper, an extended study of the occurrence of inherent parasitic bipolar effects in conventional and graded-channel fully depleted silicon-on-insulator nMOSFETs is carried out.
Abstract: An extended study of the occurrence of inherent parasitic bipolar effects in conventional and graded-channel fully depleted silicon-on-insulator nMOSFETs is carried out. The graded-channel device is a new asymmetric channel MOSFET, fabricated through a simple process variation. Measurements and two-dimensional simulations are used to demonstrate that the graded-channel device efficiently alleviates the parasitic BJT action, improving the breakdown voltage, by the reduction of impact ionization in the high electric field region. Based on process/device simulation and modeling, multiplication factor and parasitic bipolar gain, which are the responsible parameters for the parasitic BJT action, are investigated separately providing a physical explanation. The abnormal subthreshold slope and hysteresis phenomenon are also studied and compared. (C) 2000 Elsevier Science Ltd. All rights reserved.

Patent
18 Feb 2000
TL;DR: In this paper, an insulated-gate semiconductor element with a trench structure is provided, which has a high breakdown voltage even though a silicon carbide substrate is used that is preferable to obtain a semiconductor elements with favorable properties.
Abstract: An insulated-gate semiconductor element with a trench structure is provided, which has a high breakdown voltage even though a silicon carbide substrate is used that is preferable to obtain a semiconductor element with favorable properties. The surface of a silicon carbide substrate is etched to form a concave portion. Then, a particle beam, for example an ion beam, is irradiated from above, and a defect layer is formed at least in a bottom surface of the concave portion. The substrate is heated in an oxidation atmosphere, and an oxide film is formed at least on a side surface and the bottom surface of the concave portion. Then, a gate electrode is formed on the oxide film. With this method, the oxide film at the bottom surface of the concave portion is thicker than the oxide film at the side surfaces of the concave portion, so that a high breakdown voltage can be ensured, even when the surface of the silicon carbide layer is a face with which a superior epitaxial layer can be attained, such as the (111) Si-face of β-SiC or the (0001) Si-face of α-SiC.

Journal ArticleDOI
TL;DR: In this article, voltage-dependent dielectric breakdown is observed in Al-Al2O3-Au diodes where Al 2O3 is made by anodizing in different electrolytes.
Abstract: Theories of dielectric breakdown in insulating films normally assume that dielectric breakdown depends on the electric field in the sample; that is, the thicker the film the higher the breakdown voltage. Contrary to theoretical expectations, voltage-dependent dielectric breakdown is observed in Al–Al2O3–Au diodes where Al2O3 is made by anodizing in different electrolytes. The breakdown voltage is ∼4.5 V, independent of Al2O3 thickness and anodizing electrolyte. Voltage-controlled negative resistance (VCNR) develops in the current–voltage (I–V) characteristics of Al–Al2O3–Au diodes after voltage-dependent breakdown. Electron emission into vacuum accompanies the formation of VCNR in the I–V characteristics. Detailed studies of the development of VCNR show that the maximum current, the voltage for maximum current, and the voltage threshold for electron emission depend on the maximum voltage applied to the sample. A large current increase occurs for maximum applied voltage between 5 and 7 V. A fully developed...

Proceedings ArticleDOI
22 May 2000
TL;DR: In this paper, a new vertical DMOS Transistor is proposed, in which floating islands are placed in the drift region, which exhibits improved on-state performance when compared to the conventional VDMOST.
Abstract: In this paper, a new vertical DMOS Transistor is proposed, in which floating islands are placed in the drift region. This new structure, called "FLIMOST", exhibits improved on-state performance when compared to the conventional VDMOST. For instance, for a breakdown voltage of 900 Volts, the performance is strongly improved in term of specific on-resistance (reduction of about 70% relative to the conventional structure and 40% relative to the silicon limit). Moreover the specific on-resistance theoretical limits of FLIMOST family are determined and compared to those of the "Superjunction" MOS Transistor family: this comparison shows the strong interest of the FLIMOSFET in the 200 V-1000 V breakdown voltage range.

Proceedings ArticleDOI
10 Apr 2000
TL;DR: In this paper, a comprehensive time-dependent dielectric breakdown study was conducted on sub-3 nm SiO/sub 2/ films over a temperature range from 22/spl deg/C to 350/spl dc/C.
Abstract: A comprehensive time-dependent dielectric breakdown study was conducted on sub-3 nm SiO/sub 2/ films over a temperature range from 22/spl deg/C to 350/spl deg/C. Two breakdown modes were observed in current versus time characteristics and low voltage I-V curves depending on device area and stress voltage. Larger device areas and lower stress voltage produced higher occurrences of soft/noisy breakdown events while smaller device areas and larger stress voltages produced harder/thermal breakdown events. Stress temperature did not affect the breakdown mode. The results indicate that both breakdown modes exhibit the same thermal acceleration if the first occurrence of current noise is used as a breakdown criteria for those devices exhibiting noisy breakdown. The observed strong dependence of the thermal activation energy on gate voltage may explain previous reports of increased temperature acceleration for ultra-thin films.

Proceedings ArticleDOI
Tetsuya Nitta1, T. Minato, M. Yano, Akio Uenisi, M. Harada, S. Hine 
22 May 2000
TL;DR: In this paper, a super trench power MOSFET (STM) was proposed, which has vertical P and N layers formed within mesa regions between adjacent trenches filled with insulator.
Abstract: We propose a new structure of power MOSFET, i.e. Super Trench power MOSFET (STM). Instead of a conventional n-drift layer, STM has vertical P and N layers formed within mesa regions between adjacent trenches filled with insulator. The P and N stripe structure relaxes the electric field in off-state and makes possible a lower specific on-resistance (Ron, sp) than that of the conventional MOSFET. We fabricated a 250 V STM for the first time with only one additional mask over the conventional DMOS process, and the measured data show high breakdown voltage with highly doped n drift layer. The device simulation results show it should be possible to lower the Ron, sp to 5 m/spl Omega/cm/sup 2/ for a breakdown voltage of 300 V.

Journal ArticleDOI
TL;DR: In this article, a high-voltage sustaining structure with buried oppositely doped regions is demonstrated, where the compensation of the electric field provided by these regions, the resistivity and/or the thickness of the voltage-sustaining layer can be made smaller than that of a conventional one with the same breakdown voltage.
Abstract: A novel high-voltage sustaining structure with buried oppositely doped regions is demonstrated. Due to the compensation of the electric field provided by these regions, the resistivity and/or the thickness of the voltage-sustaining layer can be made smaller than that of a conventional one with the same breakdown voltage, and therefore the on-resistance (of unipolar conduction) can be reduced. The theory developed for designing such structures is found to be in good agreement with the results obtained from two-dimensional (2-D) simulation as well as from experiment. A 500 V VD-MOST using such a structure as the drift region and with proper edge termination is fabricated. Results show that its on-resistance is lower than the value given by the conventional "silicon limit".

Journal ArticleDOI
TL;DR: In this article, the authors proposed a frequency range of 20 to 300 Hz for on-site testing of extruded insulation cables, which is the frequency range proposed in the latest IEC Draft.
Abstract: High-voltage on-site tests of extruded insulation cables are necessary to check the quality of the installation of the system. The test voltage should simulate the stress under service conditions, and generate the same failure mechanism. With respect to an optimum design of test systems, a frequency range of 20 to 300 Hz, proposed in the latest IEC Draft for on-site testing of extruded insulation cables, seems to be reasonable. The test results on model cables can be used for real cables concerning the influence of the waveform on the breakdown voltage. The withstand voltage decreases with increasing frequency. The withstand voltage and the electrical breakdown field strength are very close together for frequencies between 20 Hz to 300 Hz. Mechanical defects, as well as water trees, reduce the breakdown voltage at 0.1 Hz more than at 20 to 300 Hz, but the absolute test voltage values are higher, and the breakdown mechanism is different compared with voltages of power frequency or adjacent frequencies. For on-site tests, frequency-tuned resonant test systems (ACRF) can be recommended because they have a very good weight-to-test power ratio, and very low power demands.

Journal ArticleDOI
TL;DR: The Schottky barrier height (Phi(B)) and reverse breakdown voltage (V-B) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O-2 discharges on the near surface elec...
Abstract: The Schottky barrier height (Phi(B)) and reverse breakdown voltage (V-B) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O-2 discharges on the near-surface elec ...

Journal ArticleDOI
TL;DR: In this article, a waveguide avalanche photodiodes with a very thin 0.1 /spl mu/m multiplication layer for use in high-speed, high-sensitivity, lowvoltage operation receivers is presented.
Abstract: The development of waveguide avalanche photodiodes with a very thin 0.1 /spl mu/m multiplication layer for use in high-speed, high-sensitivity, low-voltage-operation receivers is presented. A /spl eta/=76% a GB product of 180 GHz. And a breakdown voltage Vb of 15 V were obtained. The 10 Gbit/s bit error rate measurement showed a sensitivity of -28 dBm (BER 10/sup -9/, PRBS 2/sup 23/-1), which is the highest sensitivity yet reported for APD receivers.