Topic
Brillouin scattering
About: Brillouin scattering is a research topic. Over the lifetime, 11426 publications have been published within this topic receiving 178306 citations.
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TL;DR: In this article, the absorption of intense laser light is reduced when targets are irradiated by 1.06-m light with long pulse widths (150-400 ps) and large focal spots (100-250 m).
Abstract: The absorption of intense laser light is found to be reduced when targets are irradiated by 1.06-\ensuremath{\mu} m light with long pulse widths (150-400 ps) and large focal spots (100-250 \ensuremath{\mu}m). Estimates of Brillouin scatter which account for the finite heat capacity of the underdense plasma predict this reduction. Spectra of the back-reflected light show red shifts indicative of Brillouin scattering.
50 citations
TL;DR: In this paper, the authors measured the Raman linewidth as a function of temperature (7-1183 K) and pressure (0-400 bar) on the (111 and (100) planes of single crystals of the cubic anti-fluorite.
Abstract: Experiments in which the Raman linewidth was measured as a function of temperature (7-1183 K) and pressure (0-400 bar) were performed on the (111) and (100) planes of single crystals of the cubic anti-fluorite . The temperature dependence of the lattice constant was determined by x-ray diffraction (11-295 K). From these results and published Brillouin scattering data for this host, the volume thermal expansion coefficient as a function of temperature was obtained as well as the isothermal compressibility and the isothermal Raman mode Gruneisen parameter. Using the thermodynamic approach within the quasi-harmonic approximation, we show that below 400 K the volume effects describe well the temperature dependence of the Raman linewidth whereas above this temperature there are direct anharmonic effects appearing. Above approximately 850 K new Raman lines appear that are and E polarized.
50 citations
TL;DR: Sp spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098-microm2 cross-sectional area is reported, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.
Abstract: We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098‐µm2 cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.
50 citations
TL;DR: In this paper, a novel scheme to implement multitap tunable incoherent microwave photonic filters with all-optical complex coefficients based on Brillouin signal processing of optical single-sideband signals was proposed.
Abstract: We propose a novel scheme to implement multitap tunable incoherent microwave photonic filters with all-optical complex coefficients based on Brillouin signal processing of optical single-sideband signals. A six-tap filter is experimentally demonstrated to highlight the enhanced flexibility in the synthesis of frequency responses provided by complex coefficients, particularly in terms of tuning.
50 citations
50 citations