About: BSIM is a research topic. Over the lifetime, 507 publications have been published within this topic receiving 5131 citations.
Papers published on a yearly basis
TL;DR: The Berkeley short-channel IGFET model (BSIM) as discussed by the authors is an accurate and computationally efficient MOS transistor model, and its associated characterization facility for advanced integrated-circuit design is described.
Abstract: The Berkeley short-channel IGFET model (BSIM), an accurate and computationally efficient MOS transistor model, and its associated characterization facility for advanced integrated-circuit design are described. Both the strong-inversion and weak-inversion components of the drain current expression are included. In order to speed up the circuit-simulation execution time, the dependence of the drain current on the substrate bias has been modeled with a numerical approximation. This approximation also simplifies the transistor terminal-charge expressions. The charge model was derived from its drain-current counterpart to preserve consistency of device physics. Charge conservation is guaranteed in this model.
01 Jan 1996
TL;DR: The SPICE Modeling and the Dominance of CMOS Technology and the Formalism of Model Building and the Future of Device Models for Circuit Simulation are studied.
Abstract: 1. SPICE Modeling and the Dominance of CMOS Technology. 2. SPICE Modeling and the Formalism of Model Building. 3. The Semiconductor Physics of MOS Structures. 4. A Comparison of Analytical and Numerical Results. 5. The Level 1 Model. 6. The Level 2 Model. 7. The Level 3 Model. 8. BSIM. 9. HSPICE Level 28. 10. BSIM2. 11. BSIM3. 12. MOS Model 9. 13. The Active Device Capacitance. 14. Accounting for Systematic Process Variations. 15. Circuit Level Correlation of Models and Hardware. 16. New Model Candidates. 17. The Future of Device Models for Circuit Simulation. APPENDICES. A. An Executive Summary of the Various Models. B. Channel Length and Width. C. The Final Model Equations. D. The Extracted HSPICE Level 28 Model. E. The Binned BSIM2 Model. INDEX.
TL;DR: A new physical and continuous BSIM (Berkeley Short-Channel IGFET Model) I-V model in BSIM3v3 is presented for circuit simulation, which allows users to accurately describe the MOSFET characteristics over a wide range of channel lengths and widths for various technologies, and is attractive for statistical modeling.
Abstract: A new physical and continuous BSIM (Berkeley Short-Channel IGFET Model) I-V model in BSIM3v3 is presented for circuit simulation. Including the major physical effects in state-of-the art MOS devices, the model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a single I-V expression, and guarantees the continuities of I/sub ds/, conductances and their derivatives throughout all V/sub gs/, V/sub ds/, and T/sub bs/, bias conditions. Compared with the previous BSIM models, the improved model continuity enhances the convergence property of the circuit simulators. Furthermore, the model accuracy has also been enhanced by including the dependencies of geometry and bias of parasitic series resistances, narrow width, bulk charge, and DIBL effects. The new model has the extensive built-in dependencies of important dimensional and processing parameters (e.g., channel length, width, gate oxide thickness, junction depth, substrate doping concentration, etc.). It allows users to accurately describe the MOSFET characteristics over a wide range of channel lengths and widths for various technologies, and is attractive for statistical modeling. The model has been implemented in the circuit simulators such as Spectre, Hspice, SmartSpice, Spice3e2, and so on.
TL;DR: BSim, a highly flexible agent-based computational tool for analyzing the relationships between single-cell dynamics and population level features, is introduced, enabling the modeling of bacterial behavior in more realistic three-dimensional, complex environments.
Abstract: Large-scale collective behaviors such as synchronization and coordination spontaneously arise in many bacterial populations. With systems biology attempting to understand these phenomena, and synthetic biology opening up the possibility of engineering them for our own benefit, there is growing interest in how bacterial populations are best modeled. Here we introduce BSim, a highly flexible agent-based computational tool for analyzing the relationships between single-cell dynamics and population level features. BSim includes reference implementations of many bacterial traits to enable the quick development of new models partially built from existing ones. Unlike existing modeling tools, BSim fully considers spatial aspects of a model allowing for the description of intricate micro-scale structures, enabling the modeling of bacterial behavior in more realistic three-dimensional, complex environments. The new opportunities that BSim opens are illustrated through several diverse examples covering: spatial multicellular computing, modeling complex environments, population dynamics of the lac operon, and the synchronization of genetic oscillators. BSim is open source software that is freely available from http://bsim-bccs.sf.net and distributed under the Open Source Initiative (OSI) recognized MIT license. Developer documentation and a wide range of example simulations are also available from the website. BSim requires Java version 1.6 or higher.