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BSIM

About: BSIM is a(n) research topic. Over the lifetime, 507 publication(s) have been published within this topic receiving 5131 citation(s).
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Journal ArticleDOI
Abstract: The Berkeley short-channel IGFET model (BSIM), an accurate and computationally efficient MOS transistor model, and its associated characterization facility for advanced integrated-circuit design are described. Both the strong-inversion and weak-inversion components of the drain current expression are included. In order to speed up the circuit-simulation execution time, the dependence of the drain current on the substrate bias has been modeled with a numerical approximation. This approximation also simplifies the transistor terminal-charge expressions. The charge model was derived from its drain-current counterpart to preserve consistency of device physics. Charge conservation is guaranteed in this model.

544 citations


Journal ArticleDOI

253 citations


Book
01 Jan 1996-
TL;DR: The SPICE Modeling and the Dominance of CMOS Technology and the Formalism of Model Building and the Future of Device Models for Circuit Simulation are studied.
Abstract: 1. SPICE Modeling and the Dominance of CMOS Technology. 2. SPICE Modeling and the Formalism of Model Building. 3. The Semiconductor Physics of MOS Structures. 4. A Comparison of Analytical and Numerical Results. 5. The Level 1 Model. 6. The Level 2 Model. 7. The Level 3 Model. 8. BSIM. 9. HSPICE Level 28. 10. BSIM2. 11. BSIM3. 12. MOS Model 9. 13. The Active Device Capacitance. 14. Accounting for Systematic Process Variations. 15. Circuit Level Correlation of Models and Hardware. 16. New Model Candidates. 17. The Future of Device Models for Circuit Simulation. APPENDICES. A. An Executive Summary of the Various Models. B. Channel Length and Width. C. The Final Model Equations. D. The Extracted HSPICE Level 28 Model. E. The Binned BSIM2 Model. INDEX.

191 citations


Journal ArticleDOI
TL;DR: A new physical and continuous BSIM (Berkeley Short-Channel IGFET Model) I-V model in BSIM3v3 is presented for circuit simulation, which allows users to accurately describe the MOSFET characteristics over a wide range of channel lengths and widths for various technologies, and is attractive for statistical modeling.
Abstract: A new physical and continuous BSIM (Berkeley Short-Channel IGFET Model) I-V model in BSIM3v3 is presented for circuit simulation. Including the major physical effects in state-of-the art MOS devices, the model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a single I-V expression, and guarantees the continuities of I/sub ds/, conductances and their derivatives throughout all V/sub gs/, V/sub ds/, and T/sub bs/, bias conditions. Compared with the previous BSIM models, the improved model continuity enhances the convergence property of the circuit simulators. Furthermore, the model accuracy has also been enhanced by including the dependencies of geometry and bias of parasitic series resistances, narrow width, bulk charge, and DIBL effects. The new model has the extensive built-in dependencies of important dimensional and processing parameters (e.g., channel length, width, gate oxide thickness, junction depth, substrate doping concentration, etc.). It allows users to accurately describe the MOSFET characteristics over a wide range of channel lengths and widths for various technologies, and is attractive for statistical modeling. The model has been implemented in the circuit simulators such as Spectre, Hspice, SmartSpice, Spice3e2, and so on.

173 citations


Journal ArticleDOI
10 May 2013-IEEE Access
TL;DR: Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs and they are selected as the world's first industry-standard compact model for the FinFET.
Abstract: Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-around-gate FinFETs and it is selected as the world's first industry-standard compact model for the FinFET. The BSIM-IMG (independent-multigate) model is developed for independent double-gate, ultrathin body (UTB) transistors, capturing the dynamic threshold voltage adjustment with back gate bias. Starting from long-channel devices, the basic models are first obtained using a Poisson-carrier transport approach. The basic models agree with the results of numerical two-dimensional device simulators. The real-device effects then augment the basic models. All the important real-device effects, such as short-channel effects (SCEs), quantum mechanical confinement effects, mobility degradation, and parasitics are included in the models. BSIM-CMG and BSIM-IMG have been validated with hardware silicon-based data from multiple technologies. The developed models also meet the stringent quality assurance tests expected of production level models.

95 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202117
202017
201929
201818
201717
201627

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Topic's top 5 most impactful authors

Chenming Hu

53 papers, 916 citations

Yogesh Singh Chauhan

27 papers, 542 citations

Ali M. Niknejad

21 papers, 625 citations

Sourabh Khandelwal

19 papers, 408 citations

Juan Pablo Duarte

14 papers, 349 citations