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Buffer gas
About: Buffer gas is a research topic. Over the lifetime, 3565 publications have been published within this topic receiving 47283 citations.
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TL;DR: In this paper, the authors studied the condensation of metal vapor in an inert gas by the molecular dynamics method and showed that the internal temperature of a cluster considerably exceeds the buffer gas temperature and the thermal balance is established for a time considerably exceeding the nucleation time.
Abstract: The condensation of metal vapor in an inert gas is studied by the molecular dynamics method. Two condensation regimes are investigated: with maintenance of partial pressure of the metal vapor and with a fixed number of metal atoms in the system. The main focus is the study of the cluster energy distribution over the degrees of freedom and mechanisms of the establishment of thermal equilibrium. It is shown that the internal temperature of a cluster considerably exceeds the buffer gas temperature and the thermal balance is established for a time considerably exceeding the nucleation time. It is found that, when the metal vapor concentration exceeds 0.1 of the argon concentration, the growth of clusters with the highest possible internal energy occurs, the condensation rate being determined only by the rate of heat removal from clusters.
23 citations
TL;DR: The theoretical and measured binary and ternary recombination rate coefficients obtained for and ions are in good agreement.
Abstract: Measurements of recombination rate coefficients of binary and ternary recombination of and ions with electrons in a low temperature plasma are described. The experiments were carried out in the afterglow plasma in helium with a small admixture of Ar and parent gas (H2 or D2). For both ions a linear increase of measured apparent binary recombination rate coefficients (αeff) with increasing helium density was observed: αeff = αBIN + K He[He]. From the measured dependencies, we have obtained for both ions the binary (αBIN) and the ternary (K He) rate coefficients and their temperature dependence. For the description of observed ternary recombination a mechanism with two subsequent rate determining steps is proposed. In the first step, in + e− (or + e−) collision, a rotationally excited long-lived Rydberg molecule (or ) is formed. In the following step (or ) collides with a He atom of the buffer gas and this collision prevents autoionization of (or ). Lifetimes of the formed (or ) and corresponding ternary re...
23 citations
Patent•
20 Dec 1982TL;DR: In this article, a lamp primarily containing neon gas is supplied with alternating electrical power at a frequency of not less than 5 kHz and discharge current is determined on the basis of the gas pressure such that no striations occur.
Abstract: A lamp primarily containing neon gas is supplied with alternating electrical power at a frequency of not less than 5 kHz The discharge current is determined on the basis of the gas pressure such that no striations occur If necessary, getter means including a metal element belonging to the second, third, fourth or fifth periodic group are provided near each electrode, oriented so as not to interfere with any electron emissions from the lamp electrodes
23 citations
TL;DR: In this paper, the authors investigated the mitigation of fast ions from a laser-produced Sn plasma by a H2 background gas, and found that the sputtering rate by the fast ions was reduced to less than approximately 5% by H2 gas with a column density of 1.2×1021l∕m2.
Abstract: One of the serious problems in the laser-produced plasma for an extreme ultraviolet (EUV) light source used for the next generation lithography is the generation of fast ions that damage the EUV collector optics. In this study, the mitigation of fast ions from a laser-produced Sn plasma by a H2 background gas was investigated. It has been confirmed that H2 buffer gas at a pressure of 13.3Pa has little influence on the transmission of 13.5nm light with an optical path length of 200mm. The sputtering of a dummy mirror by the fast ions generated from the laser-produced Sn plasma and their mitigation were investigated by visualizing the spatial distributions of sputtered atoms using the laser-induced fluorescence (LIF) imaging method. It was evaluated that the sputtering rate by the fast ions was reduced to less than approximately 5% by H2 gas with a column density of 1.2×1021l∕m2. The dynamics and the chemical reaction of the plasma plume containing the high energy and high density ions in a H2 background ga...
23 citations
Patent•
08 Nov 1993
TL;DR: In this paper, a process for the purification of inert gases containing impurities of organic nature particularly of gas (nitrogen) coming from solid state polycondensation reactors of polyester resins including the gas treatment with the stoichiometric quantity (or slightly higher) of oxygen as regards the present impurities at a temperature between 250° and 600 °C by using Pt or Pt/Pd catalysts supported on a porous solid and the gas recycling directly to the poly-condensation reactor before drying to eliminate the water produced during the reaction of impurities oxidation.
Abstract: Process for the purification of inert gases containing impurities of organic nature particularly of gas (nitrogen) coming from solid state polycondensation reactors of polyester resins including the gas treatment with the stoichiometric quantity (or slightly higher) of oxygen as regards the present impurities at a temperature between 250° and 600 °C by using Pt or Pt/Pd catalysts supported on a porous solid and the gas recycling directly to the polycondensation reactor before drying to eliminate the water produced during the reaction of impurities oxidation.
23 citations