Buffer gas

About: Buffer gas is a research topic. Over the lifetime, 3565 publications have been published within this topic receiving 47283 citations.

Apparatus for depositing thin films on semiconductor wafer by continuous gas injection

Abstract: An apparatus for depositing thin films of a semiconductor device. The thin film deposition apparatus includes: a reactor maintained at a constant pressure; at least two reaction gas supply portions for supplying reaction gases to the reactor; an exhaust pump for discharging the gases out of the reaction gas supply portions and/or the reactor; first flow control valves installed between each reaction gas supply portion and the reactor, for controlling the amount of gases flowing between the reaction gas supply portions and the reactor; second flow control valves installed between each reaction gas supply portion and the exhaust pump, for controlling the amount of gases flowing between the reaction gas supply portions and the exhaust pump; an inert gas supply portion for supplying an inert gas into the reactor; reaction gas pipe lines, wherein the reaction gases provided from the reaction gas supply portions flow through the reaction gas pipe lines to the reactor and/or the exhaust pump; an inert gas pipe line, wherein the inert gas provided from the inert gas supply portion flows through the inert gas pipe line to the reactor; and a plurality of valves installed in the reaction gas pipe lines and/or the inert gas pipe lines, for controlling the amount of reaction gases and inert gas flowing into the reactor and/or the exhaust pump.

Trapped ion density distribution in the presence of He-buffer gas

Abstract: The spatial density distribution of Ba+ ions, confined in a rf quadrupole trap, has been measured by laser scanning across the trap. This allows to determine the ion temperature, assuming thermal equilibrium. Under UHV conditions the average ion energy has been found to be one tenth of the trap potential well depth. Collisions with He at pressures up to 5×10−6 mbar reduce the ion temperature by a factor of 3.

Method for improved cleaning of substrate processing systems

Abstract: A method for a multiple-stage microwave plasma cleaning technique for efficiently cleaning a substrate processing chamber. In a specific embodiment, a two-stage cleaning process is described. The first stage begins by flowing a reactive gas from a gas source (7) into a processing chamber (15) where microwaves ignite and maintain a plasma from the reactive gas. Reactive radicals generated which react with residues on the interior surfaces of the processing chamber. In the second stage, an inert gas is flowed into the processing chamber in addition to the reactive gas. Microwaves then ignite and maintain a plasma from the reactive gas and optionally, the inert gas as well. Optionally, an inert gas can be flowed into the processing chamber prior to the first stage to remove loose particles from the processing chamber. The reactive gas in such embodiments is preferably NF3, but other fluorine-containing gases such as carbon tetrafluoride (CF4) or sulfurhexafluoride (SF6) may also be used. Moreover, chlorine- or other halogen-containing gases may also be used as the reactive gas in other embodiments in place of fluorine-containing gases.

Generation of cluster beams

Abstract: The processes are considered in a cluster plasma consisting of a dense plasma of a buffer gas and a metal admixture These processes involving clusters in a gas or plasma include nucleation processes in a supersaturated vapor, formation of metallic clusters in a dense gas from metal-containing compounds, and chemical processes in the course of this conversion, processes of cluster charging in a plasma and under the action of an electron beam The basic methods are analyzed for cluster generation including formation and growth of clusters in free jet expansion of a gas, under laser action on the metallic surface, and growth of clusters in a plasma resulted from injection of metal-containing molecules into a plasma Some applications of cluster beams are discussed, which include fabrication of thin films, new materials, and creation of a hot nonuniform plasma

Flue gas recirculation system

Abstract: A system is provided for reducing the amount of nitrogen oxides produced by conventional gas-fired boilers, water heaters, or other heat transfer devices by diluting the fuel gas with an inert gas. The system includes a mixing unit or region for diluting fuel gas with an inert gas before the fuel gas is supplied to a burner assembly of a combustion device. Flue gas from the combustion chamber of the combustion device may be used to dilute the fuel gas.