Topic
Buffer gas
About: Buffer gas is a research topic. Over the lifetime, 3565 publications have been published within this topic receiving 47283 citations.
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TL;DR: In this article, the first IRPD spectrum of a small hydrocarbon dication, C 7 H 6 2+, is presented, indicating that this dication corresponds to doubly ionized cycloheptatrienylidene.
115 citations
TL;DR: In this paper, the effects of buffer gas composition on low temperature ignition of iso-octane and n-heptane were investigated using a recently developed rapid compression machine in the temperature range of 600-850 K.
114 citations
TL;DR: In this paper, a single isotope of Cd114 was used for the transition in Cd (II) using a tubular furnace at temperatures in the range of 200°C with He as a buffer gas.
Abstract: A gain of 20%/m and a power output of 50 mW have been measured on the 5s2 2D5/2 → 5p2P03/2 4416‐A laser transition in Cd (II) using a single isotope of Cd114. The system was operated in a tubular furnace at temperatures in the range of 200°C with He as a buffer gas. The laser output with respect to He pressure, discharge current, and furnace temperature are discussed along with a proposed excitation mechanism. The system appears to have the prospect of being one of the most efficient, high power lasers operating in the visible region of the spectrum.
114 citations
TL;DR: In this paper, a few-layered graphene sheets were synthesized by direct current arc discharge using different buffer gases, and the properties of these buffer gases were investigated using scanning electron microscopy (SEM), TEM, Raman spectroscopy, X-ray diffraction (XRD), atomic force microscopy, AFM, thermogravimetric analysis (TGA), Brunauer-Emmett-Teller (BET), and fourprobe method.
112 citations
Patent•
28 Jul 2000TL;DR: An etching gas mixture for a transition metal thin film, and an etching method using the etch gas mixture are provided in this article, which is composed of two gases, i.e., carbon oxide gas, hydrocarbon gas, nitrogen oxide gas and nitrogen-containing gas.
Abstract: An etching gas mixture for a transition metal thin film, and an etching method using the etching gas mixture are provided. The etching gas mixture is composed of two gases. The first gas is one selected from the group consisting of halogen gas, halide gas, halogen gas mixture, halide gas mixture and gas mixture of halogen and halide. The second gas is one selected from the group consisting of carbon oxide gas, hydrocarbon gas, nitrogen oxide gas and nitrogen-containing gas. The etching gas mixture reacts with the transition metal thin film to form a highly volatile metal halide, so that a fine pattern can be formed with a high selectivity.
112 citations