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Capacitance

About: Capacitance is a research topic. Over the lifetime, 69666 publications have been published within this topic receiving 1039557 citations. The topic is also known as: electrostatic capacity & electric capacitance.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a new memory structure using threshold shifting from charge stored in nanocrystals of silicon (≊5nm in size) was described, which utilizes direct tunneling and storage of electrons in the nanocrystal.
Abstract: A new memory structure using threshold shifting from charge stored in nanocrystals of silicon (≊5nm in size) is described. The devices utilize direct tunneling and storage of electrons in the nanocrystals. The limited size and capacitance of the nanocrystals limit the numbers of stored electrons. Coulomb blockade effects may be important in these structures but are not necessary for their operation. The threshold shifts of 0.2–0.4 V with read and write times less than 100’s of a nanosecond at operating voltages below 2.5 V have been obtained experimentally. The retention times are measured in days and weeks, and the structures have been operated in an excess of 109 cycles without degradation in performance. This nanomemory exhibits characteristics necessary for high density and low power.

1,624 citations

Journal ArticleDOI
TL;DR: Two different mathematical formulas for estimating effective capacitance from CPE parameters, taken from the literature, are associated unambiguously with either surface or normal time-constant distributions as mentioned in this paper.

1,566 citations

Journal ArticleDOI
TL;DR: The results strongly indicate that the long-standing puzzle about the interfacial capacitance in carbon-based electrodes has a quantum origin, and suggest that charged impurities also influences the quantum capacitance.
Abstract: Graphene has received widespread attention due to its unique electronic properties. Much of the research conducted so far has focused on electron mobility, which is determined by scattering from charged impurities and other inhomogeneities. However, another important quantity, the quantum capacitance, has been largely overlooked. Here, we report a direct measurement of the quantum capacitance of graphene as a function of gate potential using a three-electrode electrochemical configuration. The quantum capacitance has a non-zero minimum at the Dirac point and a linear increase on both sides of the minimum with relatively small slopes. Our findings -- which are not predicted by theory for ideal graphene -- suggest that charged impurities also influences the quantum capacitance. We also measured the capacitance in aqueous solutions at different ionic concentrations, and our results strongly indicate that the long-standing puzzle about the interfacial capacitance in carbon-based electrodes has a quantum origin.

1,492 citations

Journal ArticleDOI
TL;DR: In this article, a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltages measurements on spatially inhomogeneous Schottky contacts is presented.
Abstract: We present a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltage measurements on spatially inhomogeneous Schottky contacts. A new evaluation schema of current and capacitance barriers permits a quantitative analysis of spatially distributed Schottky barriers. In addition, our analysis shows also that the ideality coefficient n of abrupt Schottky contacts reflects the deformation of the barrier distribution under applied bias; a general temperature dependence for the ideality n is predicted. Our model offers a solution for the so‐called T0 problem. Not only our own measurements on PtSi/Si diodes, but also previously published ideality data for Schottky diodes on Si, GaAs, and InP agree with our theory.

1,439 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20232,775
20225,573
20212,188
20202,782
20193,170
20183,334