Topic
Carbide
About: Carbide is a research topic. Over the lifetime, 36331 publications have been published within this topic receiving 503586 citations.
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01 Jan 2014
TL;DR: In this paper, a comprehensive review has been made on different works related with the oxidation behavior of silicon carbide, which can be either active or passive, where active oxidation reduces the strength of the samples whereas passive oxidation leads to the formation of coher- ent silica layer over silicon carbides surface, thereby improving its performances in several appli- cations.
Abstract: Silicon Carbide as an inorganic material possesses properties like high thermo- chemical stability, high hardness and fracture toughness, low thermal expansion coefficient etc. It is therefore, widely used in the making of refractory, semiconductor devices, combustion en- gines, etc. Being a nonoxide, it has a tendency to get oxidized at elevated temperature under oxidizing atmosphere. Oxidation of silicon carbide can be either active or passive. Active oxidation reduces the strength of the samples whereas passive oxidation leads to the formation of coher- ent silica layer over silicon carbide surface, thereby improving its performances in several appli- cations. Being an interesting area of research, numerous works have been reported on the oxidation behaviour of silicon carbide. In this paper a comprehensive review has been made on different works related with the oxidation behaviour of silicon carbide.
109 citations
TL;DR: In this article, a systematic investigation of mean sizes and mean center-of-mass distances of metal clusters in Me-DLC films is presented, with four different kinds of metal (gold, platinum, tungsten and iron) and metal contents ranging from 0 to 50 at% are analysed, each by four complementary analytical techniques: small angle X-ray scattering, wide angle Xray diffraction, transmission electron microscopy and scanning tunnelling microscopy.
109 citations
TL;DR: In this article, the results of dry sliding wear tests of aluminium alloy (Al-Zn-Mg) and aluminium (Al−Zn−Mg)-10, 15 and 25 wt.% SiCp composite was examined under varying applied pressure (0.2 to 2.0 MPa) at a fixed sliding speed of 3.35 m/s.
109 citations
TL;DR: For high-temperature materials including oxides, borides, carbides and nitrides, the conductivities at low temperatures are frequently dominated by impurities or dopants, and intrinsic conduction only becomes significant above a temperature which depends largely on the level of dopant, the band gap and the defect structure of the base material as discussed by the authors.
Abstract: High-temperature materials including oxides, borides, carbides, and nitrides encompass all types of conductors: metallic, semiconducting, and ionic. Their electrical conductivities are generally very sensitive to impurities regardless of the type of conductor. For large band-gap materials, which includes most of the oxides, the conductivities at low temperatures are frequently dominated by impurities or dopants, and intrinsic conduction only becomes significant above a temperature which depends largely on the level of dopant, the band gap and the defect structure of the base material. The borides, carbides, and nitrides of transition metals are metallic conductors with conductivities and temperature coefficients of resistivity comparable to that of their parent metals.
109 citations
TL;DR: In this article, high resolution transmission electron microscopy analysis of the particle found at the tip of the carbon nanotubes reveals the presence of a metastable carbide Ni3C, which is formed after the growth is stopped due to the rapid cooling of the Ni-C interstitial solid solution.
Abstract: Vertically aligned carbon nanotubes were synthesized by plasma enhanced chemical vapor deposition using nickel as a metal catalyst. High resolution transmission electron microscopy analysis of the particle found at the tip of the tubes reveals the presence of a metastable carbide Ni3C. Since the carbide is found to decompose upon annealing at 600 °C, we suggest that Ni3C is formed after the growth is stopped due to the rapid cooling of the Ni-C interstitial solid solution. A detailed description of the tip growth mechanism is given, that accounts for the composite structure of the tube walls. The shape and size of the catalytic particle determine the concentration gradient that drives the diffusion of C atoms across and though the metal.
108 citations