Topic
Carbide
About: Carbide is a research topic. Over the lifetime, 36331 publications have been published within this topic receiving 503586 citations.
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TL;DR: In this paper, the failure mechanism of transition metal nitride and carbide barrier materials in Al overlayer metallizations was investigated, and the authors developed high-temperature contact structures for silicon semiconductor devices by using an intermetallic compound of Al instead of plain Al for the top layer.
Abstract: Recently transition‐metal nitrides and carbides have received great interest as diffusion barrier materials in contact structures for silicon semiconductor devices. Excellent stability of the contact structure is achievable through heat treatments of up to 600 °C when Ni is used as the top metal layer. However, the same transition‐metal compounds show poor barrier properties with Al as the top layer if heat treated to 600 °C. We have therefore investigated the failure mechanism of transition‐metal nitride and carbide barrier materials in Al overlayer metallizations. This knowledge has enabled us to develop high‐temperature contact structures for silicon semiconductor devices by using an intermetallic compound of Al instead of plain Al for the top layer.
101 citations
TL;DR: Vanadium carbides were synthesized by temperature-programmed carburization of vanadium oxide precursors (V2O5) with pure CH4 or a mixture of 49.9% CH4in H2.
101 citations
TL;DR: In this paper, a method is presented for estimating the plastic flow behavior of single-crystal silicon carbide by nanoindentation experiments using a series of triangular pyramidal indenters with five different centerline-to-face angles in combination with two-dimensional axisymmetric finite-element (FE) simulations.
100 citations
TL;DR: In this paper, the authors examined the active oxidation behavior of chemically vapor-deposited silicon carbide in an O2 atmosphere at 0.1 MPa in the temperature range between 1840 and 1923 K.
Abstract: Active oxidation behavior of chemically vapor-deposited silicon carbide in an Ar─O2 atmosphere at 0.1 MPa was examined in the temperature range between 1840 and 1923 K. The transition from active oxidation (mass loss) to passive oxidation (mass gain) was observed at certain distinct oxygen partial pressures (PO2t). The values of PO2t increased with increasing temperature and with decreasing total gas flow rates. This behavior was well explained by Wagner's model and thermodynamic calculations. Active oxidation rates (ka) increased with increasing O2 partial pressures and total gas flow rates. The rate-controlling step of the active oxidation was concluded to be O2 diffusion through the gaseous boundary layer.
100 citations
TL;DR: Transition metal silicides and carbides are attractive advanced materials possessing unique combinations of physical and mechanical properties as mentioned in this paper, however, conventional synthesis of bulk intermetallic intermetallers is difficult and expensive.
100 citations