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Carbide
About: Carbide is a research topic. Over the lifetime, 36331 publications have been published within this topic receiving 503586 citations.
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TL;DR: In this article, a deformed and detached surface layer was found on top of the specimens after surface grinding with a diamond wheel, and the surface roughness after grinding was measured by scanning confocal microscopy.
151 citations
Patent•
01 May 2007
TL;DR: Polycrystalline diamond (PCD) carbide composites of this invention have a microstructure comprising a plurality of granules formed from PCD, polycrystaline cubic boron nitride, or mixture thereof, that are distributed within a substantially continuous second matrix region that substantially surrounds the granules and that is formed from a cermet material as discussed by the authors.
Abstract: Polycrystalline diamond (PCD) carbide composites of this invention have a microstructure comprising a plurality of granules formed from PCD, polycrystalline cubic boron nitride, or mixture thereof, that are distributed within a substantially continuous second matrix region that substantially surrounds the granules and that is formed from a cermet material. In an example embodiment, the granules are polycrystalline diamond and the cermet material is cemented tungsten carbide. PCD carbide composites of this invention display improved properties of fracture toughness and chipping resistance, without substantially compromising wear resistance, when compared to conventional pure PCD materials.
150 citations
TL;DR: In this article, the effect of cubic boron nitride (cBN) coating on micro-machining of Ti-6Al-4V titanium alloy was investigated.
150 citations
TL;DR: In this paper, the sputtering process yields a deposition rate greater than ten times the best known commercial method for paracyanogen film preparation, and the results of sputtering carbide targets in the presence of nitrogen are described.
Abstract: Paracyanogenlike films – (CN)n– are prepared by reactive rf sputtering of carbon in nitrogen. The material is deposited on quartz, silicon, metals, sapphire, and mica from 20° to 450°C. Above 450°C, there is no film accumulation on the substrates. The sputtering process yields a deposition rate greater than ten times the best known commercial method for paracyanogen film preparation. Also described are the results of sputtering carbide targets i.e. HfC, TiC, SiC, in the presence of nitrogen. Due to the stability of the C≡N bond, for example, stoichiometric Si3N4 films unexpectedly were deposited from a SiC target sputtered in N2. Similar results are described for HfC and TiC targets.
150 citations
TL;DR: Support from the projects APVVV-15-0469, the authors 15-0621, VGA 2/0163/16, and VEGA 2/0082/17 is acknowledged.
Abstract: Support from the projects APVV-15-0469, APVV-15-0621, VEGA 2/0163/16, and VEGA 2/0082/17 is acknowledged. MJR and EGC acknowledge the support of EPSRC grant XMAT (EP/K008749/2).
150 citations