Topic
Carbide
About: Carbide is a research topic. Over the lifetime, 36331 publications have been published within this topic receiving 503586 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: The role of boron in conferring the grain boundary character in a new polycrystalline superalloy suitable for power generation applications is considered in this article, using a suite of high resolution characterisation techniques including atom probe tomography (APT), high resolution secondary ion mass spectroscopy (SIMS), and transmission electron microscopy (TEM).
135 citations
TL;DR: In this paper, the authors investigated reaction-forming of silicon carbide by the infiltration of carbonaceous preforms using alloyed silicon melts, in order to synthesize composite materials free of the residual silicon phase that has previously limited mechanical properties and upper use temperatures.
Abstract: The authors have investigated reaction-forming of silicon carbide by the infiltration of carbonaceous preforms using alloyed silicon melts, in order to synthesize composite materials free of the residual silicon phase that has previously limited mechanical properties and upper use temperatures. In this approach, rejection of the alloying component(s) from the primary silicon carbide phase into the remaining melt results in the formation of a secondary refractory phase, such as a silicide, in place of residual free silicon. Experiments conducted in the Si-Mo melt system show that relatively dense ({gt}90%) silicon carbide-molybdenum silicide materials free of residual silicon and residual carbon can be obtained. A model for reactive infiltration based on time-dependent permeabilities is proposed. Processing variables important for control of the reaction rate relative to the infiltration rate, and associated processing flaws, are discussed.
135 citations
TL;DR: In this article, a new layered ternary carbide, Mo2TiAlC2, was synthesized by heating an elemental mixture at 1600 degrees C for 4 h under an Ar flow.
134 citations
TL;DR: This work provides the area-controllable synthesis of a manufacturable MXene from a transition metal dichalcogenide material and the formation of a metal/semiconductor junction structure.
Abstract: The epitaxial synthesis of molybdenum carbide (Mo2C, a 2D MXene material) via chemical conversion of molybdenum disulfide (MoS2) with thermal annealing under CH4 and H2 is reported. The experimental results show that adjusting the thermal annealing period provides a fully converted metallic Mo2C from MoS2 and an atomically sharp metallic/semiconducting hybrid structure via partial conversion of the semiconducting 2D material. Mo2C/MoS2 hybrid junctions display a low contact resistance (1.2 kΩ·μm) and low Schottky barrier height (26 meV), indicating the material’s potential utility as a critical hybrid structural building block in future device applications. Density functional theory calculations are used to model the mechanisms by which Mo2C grows and forms a Mo2C/MoS2 hybrid structure. The results show that Mo2C conversion is initiated at the MoS2 edge and undergoes sequential hydrodesulfurization and carbide conversion steps, and an atomically sharp interface with MoS2 forms through epitaxial growth of ...
134 citations
Patent•
31 Mar 1989TL;DR: In this article, a method for making a supported PCD or CBN compact comprising placing in an enclosure a cup assembly having a surface and the mass of cemented metal carbide had a surface, and optionally a catalyst for diamond (or optionally, CBN) recrystallization, said surfaces being in adjacency to form an interface.
Abstract: The present invention relates to a method for making a supported PCD or CBN compact comprising placing in an enclosure a cup assembly having a mass of diamond or CBN particles having a surface and the mass of cemented metal carbide having a surface, and optionally a catalyst for diamond (or optionally, CBN) recrystallization, said surfaces being in adjacency to form an interface. The enclosure then is subjected to a high pressure/high temperature process which results in diamond or CBN compacts preferably characterized by diamond-to-diamond or CBN-to-CBN bonding joined to a cemented carbide support at their respective surfaces. The supported compacts are recovered from the enclosures and cup assemblies and finished. The finished supported compacts in the enclosure exhibit non-planar bonded interface resulting in PCD or CBN compacts of substantially non-uniform thickness. The improvement in process of the present invention comprises said carbide mass surface being the mirror image of the finished PCD or CBN non-planar interface for making a finished supported compact of substantially uniform diamond or CBN compact thickness. Preferably, at least two compacts are produced in the process and the catalyst for diamond recyrstallization is provided from the cemented metal carbide mass,
134 citations