Topic
Chamber pressure
About: Chamber pressure is a research topic. Over the lifetime, 2988 publications have been published within this topic receiving 30725 citations.
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TL;DR: In this article, a systematic study has been performed to investigate flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters, such as chamber pressure, wafer carrier rotation rate, growth temperature, isothermal reactor wall temperature, total gas flow rate, and varying concentrations of hydride and inert carrier gases (H2, N2, and NH3).
70 citations
TL;DR: In this article, low computing-cost methods for analysing the instant variation of the chamber pressure, directly obtained from the electric signal provided by a traditional piezoelectric sensor, are presented.
69 citations
Patent•
05 Jul 1994TL;DR: In this paper, an improved method of etching or cleaning a cold-wall chemical vapor deposition chamber that is substantially moisture-free at a low chamber temperature and low chamber pressure while maintaining a satisfactory etch rate was proposed.
Abstract: An improved method of etching or cleaning a cold-wall chemical vapor deposition chamber that is substantially moisture-free at a low chamber temperature and a low chamber pressure while maintaining a satisfactory etch rate by using at least one etchant gas selected from the group consisting of nitrogen trifluoride, chlorine trifluoride, sulfur hexafluoride, carbon tetrafluoride or the like and mixtures thereof.
69 citations
01 Dec 2008
TL;DR: This work will use various statistical techniques to address challenges due to the nature of plasma data: high dimensionality, collinearity, overall non-linearity of system, variation of data structure due to equipment condition changing, etc.
Abstract: The objective of this paper is to present the utilization of information produced during plasma etching for the prediction of etch bias. A plasma etching process typically relies on the concentration of electrically activated chemical species in a reaction chambers over time, depending on chamber pressure, gas flow rate, power level, and other chamber and wafer properties. Plasma properties, as well as equipment factors, are complex and vary over time. In this paper, we will use various statistical techniques to address challenges due to the nature of plasma data: high dimensionality, colinearity, parameter interactions and nonlinearities, variation of data structure due to equipment condition changing over time, etc. The emphasis will be data integrity, variable selection, accommodation for process dynamics, and model-building methods. Different techniques will be evaluated with an industrial dataset.
69 citations
Journal Article•
TL;DR: Mechanisms of heat transfer in lyophilization of parenteral solutions are discussed, with emphasis on conduction, andeduced values of the resistance of the gas phase at free molecular flow conditions agree with theoretical values.
Abstract: Mechanisms of heat transfer in lyophilization of parenteral solutions are discussed, with emphasis on conduction. Data are presented to demonstrate that the rate limiting resistance to conductive heat transfer is the gas phase resulting from lack of intimate contact between the heat source and the product. Experimental drying curves at constant shelf temperature and various constant chamber pressures reflect the dependence of thermal conductivity of this intervening gas phase, hence the drying rate, on pressure. Deduced values of the resistance of the gas phase at free molecular flow conditions agree with theoretical values. Increasing chamber pressure from 0.04 to 1.3 mm Hg at constant shelf temperature resulted in an increase of about 160% in the primary drying rate. The observed dependence of primary drying rate on pressure points to the need for control of chamber pressure in order to provide for optimum drying conditions and to insure reproducible freeze dry cycles.
67 citations