Topic
Channel length modulation
About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.
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TL;DR: In this article, deep ion implantation of acceptor impurities beneath the channel is found to improve the sub-threshold voltage characteristics of short channel nMOSFET in the subthreshold region.
Abstract: The current voltage characteristics of short channel nMOSFET in the subthreshold region is investigated by two-dimensional numerical analysis. Deep ion implantation of acceptor impurities beneath the channel is found to improve the subthreshold characteristics. Structure optimization for the deeply ion-implanted short channel MOSFET is carried out to obtain low subthreshold current with steep semilogarithmic slope, which are almost comparable with the long channel MOSFET.
12 citations
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06 Dec 1998TL;DR: In this paper, the authors developed a novel high speed dynamic threshold voltage MOSFET named LCSED for ultra low power operation using sidewall elevated drain, which achieved the following excellent characteristics as compared to the bulk-DTMOS which they proposed earlier: 60% reduced occupation area; 65% reduced junction capacitance; 67% reduced forward leakage current between shallow-well and source/drain; lower transistor series resistance; smaller short channel effect; higher drive current.
Abstract: We have developed a novel high speed dynamic threshold voltage MOSFET named LCSED for ultra low power operation This was realized using sidewall elevated drain The LCSED achieved the following excellent characteristics as compared to the bulk-DTMOS which we proposed earlier: 60% reduced occupation area; 65% reduced junction capacitance; 67% reduced forward leakage current between shallow-well and source/drain; lower transistor series resistance; smaller short channel effect; higher drive current These effects realize ultra low power high speed operation
12 citations
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TL;DR: In this paper, the dc characteristics degradation of 0.18μm metal-oxide-semiconductor field effect transistors (MOSFETs) after 10 MeV proton irradiation is comprehensively investigated.
Abstract: The dc characteristics degradation of 0.18 μm metal-oxide-semiconductor field effect transistors (MOSFETs) after 10 MeV proton irradiation is comprehensively investigated in this paper. The measured results show that the off-state drain current is increased in N-channel MOSFETs, which is due to the turn on of the parasitic transistors induced by the shallow trench isolation regions. While in P-channel MOSFETs, the threshold voltage increase (absolute value), the transconductance degradation, and the saturation drain current decrease are observed. From the analysis, it is concluded that the basic damage mechanism is not ascribed to the gate oxide and the isolation region. The origin of the observed changes may be mainly due to the damage in the spacer oxides of the transistors. In order to verify the assumption, the leakage current passing through the spacer between the gate and the drain is measured before and after irradiation with floated source/substrate and grounded drain. We find that the leakage cur...
12 citations
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TL;DR: In this article, a simple method is presented to extract the effective channel length and series resistance of n-channel MOSFETs having 0.6-2.0 mu m mask channel lengths at room and liquid nitrogen temperatures.
Abstract: A simple method is presented to extract the effective channel length and series resistance of n-channel MOSFETs having 0.6-2.0 mu m mask channel lengths at room and liquid nitrogen temperatures. Our results show that the effective channel length increases and the series resistance decreases when the temperature is reduced from 300 to 77 K.
12 citations
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18 Nov 2010TL;DR: In this paper, a current source is switchable between two precisely defined output currents and a coupling capacitor is coupled to the gate of an output MOSFET to output the selected one of the two currents.
Abstract: In the preferred embodiment, a current source is switchable between two precisely defined output currents. A terminal of a coupling capacitor is coupled to the gate of an output MOSFET. The other terminal of the capacitor is switched between two reference voltages to toggle the MOSFET to output the selected one of the two currents. A switchable bias voltage source is coupled to the gate only during the on state of the MOSFET to set the gate voltage of the MOSFET. The current output of the current source is quickly and accurately changed. A reference MOSFET is not directly coupled to the output MOSFET, so there are no slow settling components coupled to the gate of the output MOSFET.
12 citations