Topic
Channel length modulation
About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this paper, the impact of the spacer length at the source and drain on the performance of symmetrical lightly-doped double-gate MOSFET with gate length L=20nm is analyzed, with the type and doping concentration of the spacers kept the same as in the channel material.
6 citations
TL;DR: In this paper, the second-order effects in metaloxide-semiconductor field effect transistors (MOSFETs) are considered and a model of a MOS-FET including these considerations and emphasizing charge conservation is discussed.
Abstract: Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed.
6 citations
TL;DR: A depletion-mode MOSFET is typically formed with a thin channel of opposite conductivity type to the substrate, and when a large gate voltage is applied to deplete this channel, an inversion layer is induced.
Abstract: A depletion-mode MOSFET is typically formed with a thin channel of opposite conductivity type to the substrate. When a large gate voltage is applied to deplete this channel, an inversion layer is induced. As strong inversion occurs, the depletion layer depth reaches a maximum and cannot be further increased. If this depth is less than the thickness of the channel, the channel cannot be pinched off unless a reverse bias is applied to the substrate. Such a depletion-mode MOSFET is modeled as a MOSFET connected in parallel with a JFET which shares a portion of the channel. The MOSFET has zero background bias so long as the JFET is not pinched off. When the substrate bias V/SUB SS/ is larger than V/SUB p/ to pinch off the JFET, the MOSFET channel depth is reduced, equivalent to applying a background bias to the MOSFET. This background bias V/SUB B/ is shown to be a square root function of V/SUB SS/ and V/SUB p/.
6 citations
Patent•
31 Aug 2001
TL;DR: In this article, a transistor (TR) T4 of a current mirror circuit is used for a resistor of a microphone use filter FT 1 being a CR circuit and a differentiation resistance by the channel length modulation effect or the early effect of the TR T4 is utilized.
Abstract: PROBLEM TO BE SOLVED: To realize a filter for microphone that can be formed in the same semiconductor chip as that of a microphone device and has a large time constant consisting of a resistance and a capacitance and then to downsize the microphone device and to reduce its cost. SOLUTION: A transistor(TR) T4 of a current mirror circuit is used for a resistor of a microphone use filter FT 1 being a CR circuit and a differentiation resistance by the channel length modulation effect or the Early effect of the TR T4 is utilized. When a drain-source voltage VDS of the TR T4 is fluctuated, a drain-source current IDS of the TR T4 is slightly and linearly changed and the TR T4 acts like a resistor with a high resistance. Furthermore, since the TR T4 is a component of the current mirror circuit, the TR T4 has immunity against a characteristic fluctuation due to a temperature change and can be formed in the semiconductor chip without much increasing its area.
6 citations