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Channel length modulation

About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, a simple method for determining the channel length and in situ gate-oxide thickness of MOSFETs is described, based on the linear relationship between the intrinsic gate capacitance and effective channel length.
Abstract: A simple method for determining the channel length and in situ gate-oxide thickness of MOSFETs is described. The method is based on the linear relationship between the intrinsic gate capacitance and effective channel length. Measurements from two gate biases on devices of different channel lengths are sufficient to obtain a full characterization. In contrast to the channel-resistance method, the accuracy of the capacitance method is independent of the source-drain and contact series resistance. It can, therefore, be used for conventional as well as lightly-doped drain (LDD) devices. Channel length and gate-oxide thickness determined by this method are given for conventional and LDD MOSFET's. For conventional MOSFET's, the new method agrees with the traditional effective length measurements to better than 0.1 µm.

74 citations

Journal ArticleDOI
TL;DR: A thermal model based on the polynomial relationship of n"s and E"F is presented, which agreed well with published experimental data on the effect of temperature rise due to self-heating on various parameters.

74 citations

Journal ArticleDOI
TL;DR: In this paper, the behavior of hot-electron gate and substrate currents in very short channel devices was studied and an empirical relationship between the effective electron temperature and the field was found to be T e = 9.05 × 10-3E.
Abstract: The behaviors of the hot-electron gate and substrate currents in very short channel devices were studied. For a test device with electrical channel length of 0.14 µm, the hot-electron substrate current can be detected at 0.9-V drain voltage which is lower than the silicon band gap. The gate current can be measured at 2.35-V drain voltage, which is lower than the oxide-silicon energy barrier for electrons. These measurements support the quasi-thermal-equilibrium approximation and suggest that the hot-electron-induced problems cannot be eliminated in future VLSI MOSFET's of arbitrarily short channels by reducing the drain bias below some constant critical energies. An empirical relationship between the effective electron temperature and the field is found to be T e = 9.05 × 10-3E.

74 citations

Patent
Sheng T. Hsu1
30 Jan 1980
TL;DR: In this article, a gate structure is provided over the interstitial channel region of the semiconductor body between the drain and source regions, one edge of which is aligned with the source region.
Abstract: A Metal-Oxide-Semiconductor-Field Effect Transistor (MOSFET) is described wherein a body of semiconductor material is provided with source, drain and channel regions. A gate structure is provided over the interstitial channel region of the semiconductor body between the drain and source regions, one edge of which is aligned with the source region. The remainder of the channel region, between the other edge of the gate structure and the adjacent edge of the drain region is provided with a drift region of a conductivity type that is the same as the source and drain.

74 citations

Patent
14 Apr 2008
TL;DR: In this article, a gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration.
Abstract: A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in contact with the channel portion and overlaid in turn by a gate. A gate contact applies a gate voltage bias to control charge carrier accumulation and depletion in the underlying channel portion. This channel portion has a dimension normal to the gate which is fully depleted in the off-state. The dopant type is the same across the source, drain and the channel portion of the device. The device on-state current is determined by the doping and, unlike a MOSFET, is not directly proportional to device capacitance.

73 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202310
202230
202111
202016
201915
20189