Topic
Channel length modulation
About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.
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TL;DR: In this paper, the authors showed that floating body effects cause the reduction of the saturation drive current in partially depleted (PD) Sol MOSFETs, and they proposed a floating PD SOI MOSFT with shallow source-drain junction (SSD) structure to suppress the floating-body effects.
Abstract: We point out for the first time that floating-body effects cause the reduction of the saturation drive current in partially depleted (PD) Sol MOSFETs. It is demonstrated that when the channel concentration of the SOI MOSFETs is set higher in order to suppress the increase of the off current caused by floating-body effects, the drive current decreases due to the large body effect. In the conventional SOI structure where the source-drain junction is in contact with the buried oxide, the 0.18 /spl mu/m floating PD SOI MOSFET suffers around 17% decrease in the drive current under the same threshold voltage (V/sub th/) in comparison with body-fixed one. However, floating ID SOI MOSFETs show smaller V/sub th/-roll-off. Further considering the short channel effect down to the minimum gate length of 0.16 /spl mu/m, the current decrease becomes 6%. Also, we propose a floating PD SOI MOSFET with shallow source-drain junction (SSD) structure to suppress the floating-body effects. By using the SSD structure, we confirmed an increase in the drive current.
5 citations
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26 Nov 2012TL;DR: In this paper, the effect of magnetic field in the saturation regime of sub µm MOSFETs was investigated. And the authors found that it is possible to extract a magnetoresistance mobility µMR even in the saturated regime of operation.
Abstract: The effect of magnetic field in the saturation regime of sub µm MOSFETs is being reported here for the first time. The study was based on bulk MOSFETs featuring a high-κ/metal gate with an equivalent oxide thickness of 2.4 nm. Channel length ranged from 1 µm down to 50 nm, while width was kept constant at 10 µm. It is found that it is possible to extract a magnetoresistance mobility µMR even in the saturation regime of operation and in turn study the observed µMR against channel length, temperature, drain voltage and gate voltage. For these sub-micron devices, electron transport is influenced by the high electric field that exists in the channel and velocity saturation, velocity overshoot and even quasi-ballistic effects could play a role for the shortest channel lengths Here, the observed µMR behavior is well interpreted using velocity saturation and overshoot effects.
5 citations
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TL;DR: In this article, an accurate saturation transconductance model for short-channel MOSFETs is developed by considering several secondary effects including the channel length modulation, mobility degradation, drain induced barrier lowering, and threshold voltage variation.
Abstract: By considering several secondary effects including the channel length modulation, mobility degradation, drain induced barrier lowering, and threshold voltage variation, an accurate saturation transconductance model for short-channel MOSFETs is developed. The calculated values of saturation transconductance agree well with the BSIM3 simulation results and the experimental results for devices with effective channel length in the range of 0.44-10 μm. This model has the advantages of less number of model parameters and can be used to analyze the small signal performance of analog circuits.
5 citations
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TL;DR: In this paper, a capacitance voltage model that is continuous across the linear and saturation regimes is developed for a polysilicon thin film transistor, incorporating all the effects like the field dependent mobility and the channel length modulation.
Abstract: A capacitance voltage model that is continuous across the linear and saturation regimes is developed for a polysilicon thin film transistor, incorporating all the effects like the field dependent mobility and the channel length modulation. The expression developed explains the capacitance behavior in the kink region as well. Further, transconductance in saturation region is evaluated. The results obtained are then used to calculate the cut off frequency of the device in all the regions of device operation. The C–V results so obtained are matched with the available experimental results. The results are analyzed to obtain high cut off frequency by varying the grain size.
5 citations
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08 Nov 1977
TL;DR: In this article, the output voltage of high potential with the input signal of low voltage was obtained by constituting C-MOS inverter circuit with MOSFET of P and N channels, further providing N channel MOS FET and applying the output signal of opposite phase to the gate.
Abstract: PURPOSE:To obtain the output voltage of high potential with the input signal of low voltage, by constituting C-MOS inverter circuit with MOSFET of P and N channel, further providing N channel MOSFET and applying the input signal of opposite phase to the gate. CONSTITUTION:C-MOS circuit is constituted with the P channel MOSFET T21 200V or more in dielectric strength and the N channel MOSFET T22 having the same breakdown voltage. Further, branching resistors R21 and R22 are provided, the junction point is connected to the gate of the element T21, and one end is connected to the gate of the element T22 via the inverter INV consisting of C-MOS via the N channel MOSFET T23. With this constitution, the power supply VDD is applied to the element T21 and the resistor R21, and when the input VIN is fed to the element T23 and the inverter INV, high voltage output signal having opposite phase as the input signal is appeared at the output Vout.
5 citations