Topic
Channel length modulation
About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, the effect of the new source and drain structure on the floating body effect of a partially depleted SOI MOSFET was investigated by fabricating devices with body contact.
Abstract: Silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (SOI MOSFET) whose source and drain are composed of deep Schottky contact and shallow-doped extension is investigated. This new structure aims at reducing the floating body effect of a partially depleted SOI MOSFET while keeping its current drive at the same level as that of the conventional pn junction SOI MOSFET. The shallow doping was performed by implanting Sb to form n-channel devices. Incorporation of the shallow extensions into the Schottky source and drain SOI MOSFET can increase the current drive by about 2 orders of magnitude owing to the reduction of the effective Schottky barrier. It can also decrease the leakage current owing to the reduced field at the drain Schottky contact. The effect of the new source and drain structure on the floating body effect is investigated by fabricating devices with body contact. The body current in MOSFET operation and tests in lateral bipolar operation show that the proposed source/drain structure is effective in reducing the floating body effect and therefore suppressing the early drain breakdown of the SOI MOSFET.
43 citations
TL;DR: In this paper, the threshold voltage of an m.o.s. field effect transistor is modulated by the source-to-substrate reverse bias, and an analytical expression for threshold voltage as a function of geometry and bias is derived.
Abstract: The threshold vollage of an m.o.s. field-effect transistor is modulated by the source-to-substrate reverse bias. In the letter, the theory for long- and short-channel transistors is extended to include the influence of the channel width. The result is an analytical expression for the threshold voltage as a function of geometry and bias that agrees well with experimental data.
43 citations
08 Dec 2002
TL;DR: In this paper, a closed-form expression for the threshold voltage, V/sub t/, of MOSFETs fabricated with halo processes is described, and a doping transformation is employed to obtain equivalent channel dopings, necessary for charge sheet models that do not rely on threshold voltage concept.
Abstract: A closed-form expression for the threshold voltage, V/sub t/, of MOSFETs fabricated with halo processes is described. The proposed approach accurately captures the length dependent V/sub t/ behavior under different drain and body bias conditions and temperature. In addition, the necessity of considering separate V/sub t/ expressions for current and capacitances is discussed. A doping transformation is employed to obtain equivalent channel dopings, necessary for charge-sheet models that do not rely on the threshold voltage concept.
43 citations
TL;DR: In this paper, the authors examined the subthreshold behavior of metal oxide semiconductor field effect transistors (MOSFETs) with Schottky barrier (SB) source/drain and large on/off ratios.
43 citations
TL;DR: In this article, a two-dimensional analytical model for an AlGaN/GaN MODFET is presented, which assumes the velocity saturation of electrons in 2-DEG, which causes current saturation and accurately predicts the output conductance arising from the channel length modulation.
Abstract: A two-dimensional analytical model for an AlGaN/GaN MODFET is presented. The model assumes the velocity saturation of electrons in 2-DEG, which causes current saturation and accurately predicts the output conductance arising from the channel length modulation. The effects of spontaneous and piezoelectric polarization at the AlGaN/GaN heterointerface, the field-dependent mobility, and the parasitic source/drain resistances have been incorporated in the analysis. A good fit with the experimental data is obtained for an Al0.15Ga0.85N/GaN MODFET, thus proving the validity of our model. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 117–123, 2001.
43 citations