Channel length modulation

About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.

Inverted thin-film transistors with a simple self-aligned lightly doped drain structure

Abstract: The I-V characteristics of inverted thin-film transistors (TFT) are studied. A simple lightly doped drain (LDD) structure is utilized to control the channel electric field at the drain junction and to improve the performance of the TFTs. The LDD region is self-aligned to the channel and the source/drain regions. It is created by a spacer around an oxide mask which exclusively defines the channel length L/sub ch/. Experimental data show that the leakage current, subthreshold swing SS, saturation current, and on/off current ratio of the inverted TFTs are closed related to L/sub ch/, L/sub LDD/, the drain bias, gate voltage, and LDD dose. With a gate deposited at low temperature, a saturation current of approximately 1.25 mu A at 5 V and a leakage current of approximately 0.03 pA per micrometer of channel width were achieved. The current ratio therefore exceeds seven orders of magnitude, with an SS of 380 mV/decade. At 3.3 V, the current ratio is approximately 7*10/sup 6/. >

Approximation of the length of velocity saturation region in MOSFET's

Abstract: This work presents an accurate approximation of the length of velocity saturation region (LVSR) based on the calculation of one-dimensional (1-D) electric field distribution near the drain region of MOSFET's. Results show that for short-channel devices (<1 /spl mu/m), the LVSR values calculated with the new model are much smaller than the conventional approach. The new model agrees well with the MINIMOS simulation results. According to the simulation and theoretical results, the length of velocity saturation region increases gradually with the drain bias and channel length.

Accurate drain conductance modeling for distortion analysis in MOSFETs

Abstract: Present compact circuit-level MOSFET models fail to accurately describe distortion effects, which is partly due to an imprecise modeling of conductance A new MOS model has been developed which gives accurate results for distortion analysis, and incorporates a more precise description of various physical phenomena such as velocity saturation, channel length modulation, static feedback and self-heating

Low-voltage C60 organic field-effect transistors with high mobility and low contact resistance

Abstract: State-of-the-art C60 organic transistors are reported here by engineering the essential electrode/semiconductor and dielectric/semiconductor interfaces. By using calcium (Ca) as the source and drain electrodes, the width-normalized contact resistance (RCW) at the electrode/semiconductor interface could be reduced to a constant value of 2 kΩ cm at a gate-source voltage (VGS) of 2.6 V, for devices with channel lengths ranging from 25 to 200 μm. Channel transconductance is observed to follow channel length scaling, and charge mobility average value of 2.5 cm2/Vs at VGS<5 V is found independent of channel length within the studied range.