Topic
Channel length modulation
About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.
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TL;DR: In this article, the authors studied the electron mobility behavior in submicron MOSFETs in the temperature range of 77-300 K and found that the effective mobility as well as the field-effect mobility are less temperature dependent.
Abstract: The electron mobility behaviour in submicron MOSFETs is studied in the temperature range of 77–300 K. As the effective channel length is reduced, the effective mobility as well as the field-effect mobility are found to decrease and to become less temperature dependent. These experimental results are explained by the influence of series resistance and effective channel length, which are both temperature dependent. The possibility of accurate determination of series resistance and “pure” mobility is demonstrated. A new method is proposed to determine submicron MOSFET channel length at low temperatures.
30 citations
TL;DR: In this article, an explicit charge-based compact model for lightly doped FinFETs is proposed, which takes short-channel effects, subthreshold slope degradation, drain-induced barrier lowering, drain saturation voltage with velocity saturation, channel length modulation, and quantum mechanical effects into account.
Abstract: An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths (L) down to 25 nm, Fin widths (W Si) down to 3 nm, and Fin heights (H Si) down to 50 nm with a single set of parameters. It takes short-channel effects, subthreshold slope degradation, drain-induced barrier lowering, drain saturation voltage with velocity saturation, channel length modulation, and quantum mechanical effects into account.
30 citations
NEC1
TL;DR: In this paper, a simple, accurate and universal relationship between MOSFET drain current in saturation, effective channel length, and gate drive has been found, which can be explained by a simple analytical model, whose validity is supported by numerical simulation.
Abstract: A simple, accurate and universal relationship between MOSFET drain current in saturation, effective channel length, and gate drive has been found. It can be explained by a simple analytical model, whose validity is supported by numerical simulation. The model shows that the length of a velocity saturated region is a crucial parameter for describing MOSFET performance, particularly for short channel devices. The shrinkage of the length deteriorates the merit of channel length scaling. >
30 citations
TL;DR: In this paper, the authors proposed and demonstrated the extraction of MOSFET threshold voltage, source-drain resistance, gate field mobility reduction factor, and transistor gain factor from the measurement of the small-signal sourcedrain conductance of a transistor as a function of dc gate bias with zero dc drain bias.
Abstract: This paper proposes and demonstrates the extraction of MOSFET threshold voltage, source-drain resistance, gate field mobility reduction factor, and transistor gain factor from the measurement of the small-signal source-drain conductance of a transistor as a function of dc gate bias with zero dc drain bias. The theory is based on the analytical model that includes the effects of source-drain resistance and gate-induced mobility reduction. It is shown that, by measuring devices of different drawn gate lengths, effective channel lengths and actual mobility can also be extracted. The results obtained are compared with those obtained by other measurement methods.
30 citations
TL;DR: In this paper, a new MOSFET structure with a trapezoidal U-shaped channel defined by anisotropic etching is described, which results in very short channel devices almost free of short channel effects and achieves higher speed.
Abstract: A new MOSFET structure with a trapezoidal U-shaped channel defined by anisotropic etching is described. The structure results in very short channel devices almost free of short channel effects and achieves higher speed without the use of submicron photolithography. A simplified theory for the structure is presented and compared with experimental results obtained on 1–10 μm channel length devices. This structure may prove useful in the study of conduction in short channel MOSFETs without introducing the complicating two dimensional short channel effects.
30 citations