Channel length modulation

About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.

Modeling of Short-Channel Effects in GaN HEMTs

Abstract: In this article, we propose an explicit and analytic charge-based model for estimating short-channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The proposed model is derived from the physical charge-based core of the Ecole Polytechnique Federale de Lausanne (EPFL) HEMT model, which treats HEMT as a generalized MOSFET. The main emphasis of this article is to estimate SCEs by effectively capturing 2-D channel potential distribution to calculate the reduced barrier height, drain-induced barrier lowering (DIBL), velocity saturation, and channel length modulation (CLM). The model is validated with TCAD simulation results and agreed with measurement data in all regions of operation. This represents the main step toward the design of high-frequency and ultralow-noise HEMT devices using AlGaN/GaN heterostructures.

SiC MOSFET design considerations for reliable high voltage operation

Abstract: SiC MOSFETs have demonstrated continued performance improvement and maturation in the areas of Gate oxide stability and reliability over the past years. While necessary, this alone is not sufficient to achieve reliable high voltage operation. In this paper, the design constraints impacting high voltage reliability and their impact on SiC MOSFET performance at useful operating conditions are discussed. Experimental results are demonstrated with industry benchmark, reliable operation of up to T j =200°C with 1.2kV/25mOhm SiC MOSFETs and T j =175°C, 1.7kV/450A all-SiC MOSFET Dual-Switch modules. Avalanche ruggedness of the high-performance devices is also demonstrated with single-pulse energy densities of 9–15J/cm2 recorded with Drain currents as high as ID= 90A for 0.2cm2 die.

Method and apparatus for providing a modulation current

Abstract: Techniques are disclosed for providing modulation current that includes output impedance compensation with a feed-forward bandwidth enhancement and pre-distortion modulation to control waveform transition symmetry A feedback circuit senses output node voltage and increases the overdrive voltage of a current source This offsets the loss of current due to channel length modulation and increases the effective output impedance of the source A feed-forward circuit enhances the bandwidth of the impedance compensation feedback loop Waveform transition symmetry is improved by pre-distorting a laser modulation current by introducing an undershoot current on the falling edge of the modulating current

Basic parameter measurement and channel broadening effect in the submicrometer MOSFET

Abstract: An improved measurement technique of the basic MOSFET parameters is presented. This method is based on the measured data of two identical devices with different channel lengths. The effect of series resistance and channel length can be separated from the mobility measurement. This is the only method in which it has been proved that mobility can be measured on a short channel device. A new technique of channel length and series resistance is done by the measurement of newly defined quantity, R T K, which is the equivalent channel length that includes the effect of series resistance. Because of the success of this measurement method, a new phenomena, which we call channel broadening effect, was investigated. Its effects on the submicrometer device characteristics were investigated.