Topic
Channel length modulation
About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.
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TL;DR: In this article, the effect of multi-subband effects on the performance limit of metal oxide semiconductor field effect transistors (MOSFETs) is discussed for room temperature operation.
Abstract: Multi-subband effects on the performance limit of metal oxide semiconductor field effect transistors (MOSFETs), which is represented by the ballistic MOSFET characteristics, is discussed for room temperature operation. A compact formula of the drain current of ballistic MOSFETs has been derived by the effective one-subband approximation. Consideration of the multi-subband effect, which requires a complicated self-consistent calculation, revises the result and provides a rigorous current value 20% smaller than the conventional estimation. The injection velocity ranges over a narrow region of 1.2–1.6×107 cm/s. It is equal to the thermal velocity in the weak inversion, but it increases in the strong inversion due to carrier degeneracy. A compact expression for predicting the saturation drain current is derived. The mechanism of current reduction due to the multi-subband effect is discussed.
23 citations
TL;DR: In this paper, metal-oxide-semiconductor field effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated.
Abstract: Metal-oxide-semiconductor field-effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated. Electrical measurements have been performed in the temperature range of 20–300 K for devices of various channel dimensions. Large threshold voltage shifts are obtained, being obviously dependent on channel width, and independent of channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Furthermore, single electron charge/discharge processes are observed in the device with the narrowest channel.
23 citations
01 Jan 2006
TL;DR: In this article, the authors introduce PN junction Diodes, Schottky barrier diodes and Bipolar junction transistors, as well as a pseudo MOSFET.
Abstract: This chapter contains sections titled: Introduction PN Junction Diodes Schottky Barrier Diodes Solar Cells Bipolar Junction Transistors MOSFETs MESFETs and MODFETs Threshold Voltage Pseudo MOSFET Strengths and Weaknesses Appendix 4.1 Schottky Diode Current-Voltage Equation References Problems Review Questions
23 citations
TL;DR: In this paper, a narrow channel layer 4H-SiC MESFET was proposed to alleviate the short channel effects, in particular the drain-induced barrier lowering (DIBL) effect that results in threshold voltage that is dependent on the gate length and the drain voltage applied.
23 citations
TL;DR: In this paper, a 2D analytical model for short-channel fully depleted, symmetrical dual-material double-gate (SDMDG) metal-oxide-semiconductor field effect transistors has been developed.
Abstract: Based on resultant solution of a two-dimensional (2D) Poisson's equation in the silicon region, a new analytical model for short-channel fully depleted, symmetrical dual-material double-gate (SDMDG) metal–oxide–semiconductor field effect transistors (MOSFETs) has been developed. The SDMDG MOSFET exhibits significantly reduced short-channel effects (SCEs) when compared with the symmetrical double-gate (SDG) MOSFET due to the step potential profile at the interface between different gate materials. It is found that the threshold voltage roll-off can be effectively reduced using both the thin Si film and thin gate oxide. A considerable portion of the large workfunction of metal gate 1 (M1) when laterally merged with the small workfunction of metal gate 2 (M2) can efficiently suppress drain-induced barrier lowering (DIBL) and maintain the low threshold voltage degradation. In this work, not only a precise 2D analytical model of the surface potential and threshold voltage is presented, but also the minimum surface potential in M1 of the shorter channel device that brings about subthreshold swing degradation for the SDMDG MOSFET is discussed. The new model is verified to be in good agreement with numerical simulation results over a wide range of device parameters.
23 citations