Topic
Channel length modulation
About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.
Papers published on a yearly basis
Papers
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16 May 2011TL;DR: In this article, a constant current source was proposed to improve the accuracy of the LED current, which consists of a reference current generator, a current mirror, and a current regulator.
Abstract: LED is generally driven by constant current because the color and brightness of LED are directly related to their forward current. The current accuracy is a very important index for a high performance LED driver. In this paper, a constant current source applied in LED driver is proposed to improve the accuracy of the LED current. The constant current source consists of a reference current generator, a current mirror and a current regulator. An accurate current mirror with high impedance is utilized which eliminates the channel length modulation effect of the MOSFETs. A new current regulator in which MOSFET operates in linear region instead of saturation region is proposed to improve the current accuracy and the driver's efficiency. The proposed circuit is based on chartered 0.35μm 3.3/5 V process and has been simulated by Cadence spectre. The output current is 150 mA. Simulation results show that current accuracy of +/-0.5% for a wide output voltage range from 0.35 V to 13 V is obtained.
22 citations
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TL;DR: In this paper, an empirical model that describes the dependence of hot-carrier lifetime on the effective channel length of an n-channel MOSFET, allowing the estimation of the lifetimes of transistors of a given length based on data from a limited number of channel lengths, is presented.
Abstract: An empirical model that describes the dependence of hot-carrier lifetime on the effective channel length of an n-channel MOSFET, allowing the estimation of the lifetimes of transistors of a given length based on data from a limited number of channel lengths, is presented. The model takes into account the localization of hot-carrier induced damage and shows that the size of the damaged region relative to the total length of the transistor is important in determining the effect of hot-carrier-damage-induced transistor characteristics. The results are integrated into two commonly used equations for hot-carrier lifetimes of MOSFETs of a given channel length under DC operation. The model is experimentally verified for MOSFETs of effective channel lengths between 0.45 and 2.7 mu m. >
22 citations
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TL;DR: In this article, the authors present design considerations for a below 100nm channel length SOI MOSFET with electrically induced shallow source/drain junctions and demonstrate that the application of induced source/drain extensions to the SOI mOSFet will successfully control the SCEs and improve the breakdown voltage even for channel lengths less than 50nm.
22 citations
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TL;DR: In this article, the high electric field transport of short channel MOS transistors has been investigated and the saturation value of the drift velocity in the inversion channel is close to the bulk value of 107 cm sec−1.
21 citations
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TL;DR: In this article, the experimental properties of a vertical channel JFET fabricated by a double diffusion technique are presented, and a table showing its principal characteristics for different values of the diffusion depths is included.
Abstract: The experimental electrical properties of a vertical channel JFET fabricated by a double diffusion technique are presented. A table showing its principal characteristics for different values of the diffusion depths is included. The analysis of the “triode-like” operation revealed by the output characteristics is based on a two-dimensional numerical simulation of the device. At high drain currents ID is proportional to VDSα (α<1). This behaviour can be attributed mainly to the effect of channel length modulation by the drain voltage. At low drain currents, the potential barrier between the source and the drain determines the current magnitude. This is an exponential function of the barrier height which increases almost linearly when VGS increases and decreases non-linearly when VDS increases.
21 citations