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Channel length modulation

About: Channel length modulation is a research topic. Over the lifetime, 1790 publications have been published within this topic receiving 34179 citations.


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Proceedings ArticleDOI
Mark Lundstrom1
08 Dec 1996
TL;DR: In this article, a simple physical approach for modeling ultra-ubmicron MOSFETs is introduced, based on scattering probabilities, which produces analytical results that reduce to conventional ones for long channel devices but which apply to ballistic MOSFLETs as well.
Abstract: A simple, physical approach for modeling ultrasubmicron MOSFETs is introduced. The approach, based on scattering probabilities, produces analytical results that reduce to conventional ones for long channel devices but which apply to ballistic MOSFETs as well. The new model is related to conventional models, and issues such as the role of inversion layer mobility, velocity overshoot, and identifying the maximum saturated drain current, are addressed.

19 citations

Proceedings ArticleDOI
29 Sep 2003
TL;DR: In this article, a compact physics/process-based model for threshold voltage in double-gate devices is presented, and the validity and predictability of the model are demonstrated and confirmed by numerical device simulation results for extremely scaled (L/sub eff/=25 nm) double gate and bulk Si devices.
Abstract: Compact physics/process-based model for threshold voltage in double-gate devices is presented. Drain-induced barrier lowering and short-channel-induced barrier lowering models for double-gate and bulk-Si devices are derived. The validity and predictability of the models are demonstrated and confirmed by numerical device simulation results for extremely scaled (L/sub eff/=25 nm) double-gate and bulk-Si devices.

19 citations

Journal ArticleDOI
TL;DR: The model predicts an exponential dependence of the drain current on drain voltage in weak inversion and the threshold dependence on both channel length and drain voltage, which satisfactorily compare with numerical simulations obtained from the two-dimensional analyzer MINIMOS and experimental data.
Abstract: A charge-sheet analysis of the short-channel MOSFET is presented. The expression achieved for the drain current, which takes into account both the drift and the diffusion components and also mobility degradation effects, holds in the strong-inversion, weak-inversion, and saturation regimes of the device operation, and results in a continuous function of all bias voltages. The model predicts an exponential dependence of the drain current on drain voltage in weak inversion and the threshold dependence on both channel length and drain voltage. Moreover, the proposed approach predicts results which satisfactorily compare with numerical simulations obtained from the two-dimensional analyzer MINIMOS and experimental data.

19 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of channel length variation on the electrical parameters of the organic thin film transistors was emphasized, and an analytical compact model of organic thin-film transistors (OTFTs) was developed including the impact of contact resistance and gate voltage dependent mobility, simultaneously.
Abstract: A series of p-channel organic thin film transistors (OTFTs) based on small molecule pentacene semiconductor was fabricated to characterize for developing analytical modeling. In this present work, the effect of channel length variation (2.5–20 μm) on the electrical parameters of the OTFTs was emphasized. As the channel length (L) of the pentacene-TFTs is decreased, some effects such as negative output differential resistance, the threshold voltage shift, an increase in the drain current (transconductance) and an improvement in other parameters may be observed. The highest device performance with the mobility value of 8 × 10−3 cm2 V−1 s−1 was obtained from a short channel device (L = 2.5 μm). Total resistances including contact and channel resistances were extracted and discussed in detail. The results showed that the contact resistance significantly affected the performance of the OTFTs with channel lengths of 2.5 μm and 5 μm. A negative differential resistance (NDR) behavior was obtained from the saturation region of the output characteristics for each device in the case while channel length was decreased from 20 μm to 2.5 μm. This NDR effect is attributed to the trapping and de-trapping mechanism of the mobile charges at the pentacene–metal electrode interface. Finally, an analytical compact model of organic thin film transistor was developed including the effect of contact resistance and gate voltage dependent mobility, simultaneously. The proposed model was validated by comparing the results obtained from the model with those measured. The results show that the proposed model is a good agreement with the experimental transfer data for devices with the channel length value of 2.5 μm, 5 μm, 10 μm and 20 μm.

19 citations

Proceedings ArticleDOI
01 Sep 2007
TL;DR: In this article, a novel concept of graphene channel FET with highly doped silicon source/drain is proposed, and the currentvoltage characteristics are analyzed and the optimized design parameters are presented by numerical analysis and device simulation.
Abstract: In this paper, a novel concept of graphene channel FET with highly doped silicon source/drain is proposed. The current-voltage characteristics are analyzed and the optimized design parameters are presented by numerical analysis and device simulation. Such novel graphene channel MOSFETs on FDSOI or on insulator are found to have much superior current drive and transconductance than silicon MOSFETs.

19 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202310
202230
202111
202016
201915
20189