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Chemical state

About: Chemical state is a research topic. Over the lifetime, 2378 publications have been published within this topic receiving 78183 citations.


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TL;DR: In this paper, the chemical state of Cs and its distribution on the surface of SUS304 stainless steel (SS) with different Si concentrations was investigated by hard X-ray photoelectron spectroscopy (HAXPES) and scanning electron microscope/energy dispersive Xray spectroscopic (SEM/EDX) and it was found that Cs is selectively adsorbed at the site where Si distributes with a high concentration.

16 citations

Journal ArticleDOI
TL;DR: In this paper, a strategy for catalytic degradation of benzene over Pd/γ-Al2O3 catalysts via different atmospheres (H2, N2, He and air) pretreatment was carried out in a fixed bed reactor.

16 citations

Journal ArticleDOI
TL;DR: In this paper, a surface characterization study using ion scattering spectroscopy (ISS) and x-ray photoelectron spectroscopic (XPS) has been performed on solvent cleaned, n-type GaAs(001) substrates before and after cleaning by ion sputtering and annealing.
Abstract: A surface characterization study using ion scattering spectroscopy (ISS) and x-ray photoelectron spectroscopy (XPS) has been performed on solvent cleaned, n-type GaAs(001) substrates before and after cleaning by ion sputtering and annealing. The native oxide layer on this surface contains large amounts of As2O5,As2O3, and Ga2O3 according to XPS with Ga2O3 being the predominant species. Before cleaning C is present as hydrocarbons, carbonates, and carbide with hydrocarbons as the predominant chemical state. Ion sputtering converts the hydrocarbons into carbide, which is difficult to remove by further sputtering/annealing cleaning cycles, but O is removed by these cycles. According to ISS data, the outermost atomic layer is enriched in Ga before cleaning, but after cleaning the ISS Ga-to-As atom ratio is about 1:2. The results obtained in this study are consistent with the presence of a layered oxide structure with Ga2O3 just above the interface. A sputter-cleaned surface initially exhibits an increase in t...

16 citations

Journal ArticleDOI
TL;DR: In this paper, the chemical bonding states of nitrogen doped ZnO films under monodoping, codoping, and cluster doping with Ga were investigated and it was found that the N/Ga flux ratio in the doping process has a critical influence on the chemical bond of nitrogen in ZnOs.
Abstract: Fabrication of high quality p-type ZnO is the main challenge in recent ZnO research that prevents the practical application of ZnO-based devices in optoelectronics. The mechanism behind is thought to be due to self-compensation of native defects and/or dopant-induced donors. In this report, we investigated the chemical bonding states of nitrogen doped ZnO films under monodoping, codoping, and cluster doping with Ga. It was found that the N/Ga flux ratio in the doping process has a critical influence on the chemical bonding of nitrogen in ZnO. By tuning the N/Ga doping ratio, it is expected to create appropriate chemical environments to enhance the formation of desired dopant species: Ga–N2O2 (codoping), Ga–N3O and Ga–N4 (cluster doping) for p-type ZnO.

16 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202326
202249
202184
202089
201987
201894