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Chemical state

About: Chemical state is a research topic. Over the lifetime, 2378 publications have been published within this topic receiving 78183 citations.


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TL;DR: In this paper, the second-harmonic generation rotational anisotropy (SHG-RA) was used to monitor the chemical state of the Si surfaces, and to follow the conversion of H terminated surface to SiO2 by oxidation as a function of time in ambient.
Abstract: The oxidation of H terminated silicon surfaces is a significant and controversial problem in silicon device fabrication. Second-harmonic generation rotational anisotropy (SHG–RA) provides a convenient means to monitor the chemical state of the Si surfaces, and to follow the conversion of H terminated surface to SiO2 by oxidation as a function of time in ambient. The change in SHG–RA of Si(111)–H was shown to correlate well with the ellipsometric thickness. SHG is sensitive to the initial stage of oxidation (induction period) as well as to the logarithmic oxide growth. SHG is sensitive to the electronic properties of the surface, therefore it is a sensitive probe of the quality of H terminated Si(111) surface. Under ambient conditions, (20% relative humidity, 23 °C) the initial oxidation rate is at most 2×10−6 ML/s.

13 citations

Journal ArticleDOI
TL;DR: In this paper, a depth profile of the chemical states of an Al2O3/Si interface using nondestructive photon energy-dependent high-resolution x-ray photoelectron spectroscopy (HRXPS) was investigated.
Abstract: We investigated a depth profile of the chemical states of an Al2O3/Si interface using nondestructive photon energy-dependent high-resolution x-ray photoelectron spectroscopy (HRXPS). The Si 2p binding energy, attributed to the oxide interfacial layer (OIL), was found to shift from 102.1 eV to 102.9 eV as the OIL region closer to Al2O3 layer was sampled, while the Al 2p binding energy remains the same. This fact strongly suggests that the chemical state of the interfacial layer is not Al silicate as previously believed. We instead propose from the HRXPS of Al 2p and Si 2p depth-profile studies that the chemical states of the Al2O3/Si interface mainly consist of SiO2 and Si2O3.

13 citations

Journal ArticleDOI
TL;DR: In this article, the chemical states of tritium existing in neutron-irradiated solid lithium compounds were analyzed using a radiometric method, and it was found that nearly 100% of trite was found in the T+ state in LiOH, Li2O2 and Li3N, while the T− state predominated in LiH, Li7Pb2, and Li2C2.
Abstract: Chemical states of tritium existing in neutron-irradiated solid lithium compounds were analyzed using a radiometric method. Nearly 100% of tritium was found in the T+ state in LiOH, Li2O2 and Li3N, while the T− state predominated in LiH, Li7Pb2 and Li2C2. Tritium incorporated in Li2O, Li2S, LiF, LiCl, LiBr and LiI was distributed over the T+, T− and T0 states. In Li2O crystals, the distribution of tritium in the T+ state increased from 58% to 81% with increasing neutron fluence from 2.5×1016 cm−2 to 6.3×1017 cm−2.

13 citations

Journal ArticleDOI
TL;DR: In this paper, a comparison between the effects of these two kinds of ion guns on the quantification of Li(Ni,Co,Mn)O2 electrodes was made, and it was found that the C60 ion gun is more suitable for analyzing the composition and chemical state of L 2 O 2 electrodes since that it causes lower chemical damage in the superficial layer.

13 citations

Journal ArticleDOI
Xuefei Li1, Aidong Li1, Xiao-Jie Liu1, Youpin Gong1, Xiaochun Chen1, Hui Li1, Di Wu1 
TL;DR: In this article, the influence of chemical surface treatments on the interface and electrical properties of Al2O3 gate dielectric films on Ge grown by atomic layer deposition (ALD) has been investigated deeply.

13 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202326
202249
202184
202089
201987
201894