Chemical state

About: Chemical state is a research topic. Over the lifetime, 2378 publications have been published within this topic receiving 78183 citations.

Investigation of the thermal stability of Mg/Co periodic multilayers for EUV applications

Abstract: We present the results of the characterization of Mg/Co periodic multilayers and their thermal stability for the EUV range The annealing study is performed up to a temperature of 400\degree C Images obtained by scanning transmission electron microscopy and electron energy loss spectroscopy clearly show the good quality of the multilayer structure The measurements of the EUV reflectivity around 25 nm (~49 eV) indicate that the reflectivity decreases when the annealing temperature increases above 300\degreeC X-ray emission spectroscopy is performed to determine the chemical state of the Mg atoms within the Mg/Co multilayer Nuclear magnetic resonance used to determine the chemical state of the Co atoms and scanning electron microscopy images of cross sections of the Mg/Co multilayers reveal changes in the morphology of the stack from an annealing temperature of 305\degreee;C This explains the observed reflectivity loss

X-Ray photoelectron spectroscopy investigations of atomic interactions in surface layers of multilayered nanostructures (Co 45 Fe 45 Zr 10 / a -Si) 40 and (Co 45 Fe 45 Zr 10 /SiO 2 ) 32

Abstract: The interatomic interaction and chemical state of elements in amorphous multilayered (Co45Fe45Zr10/a-Si)40 and (Co45Fe45Zr10/SiO2)32 nanostructures with different interlayers have been investigated by X-ray photoelectron spectroscopy using synchrotron radiation. The results of X-ray photoelectron spectroscopy investigations have demonstrated that, in surface layers of all the studied multilayered structures, the metallic layer components Co, Fe, and Zr are in the oxidized state. The silicon state is found to be identical and close to the state of nonstoichiometric silicon oxide, regardless of the presumed compositions of SiO2 and a-Si interlayers. After the removal of surface layers of the multilayered structures in the sample preparation chamber by ion etching, the metallic layer components Co, Fe, and Zr are predominantly in the elemental state.

Effects of Vanadium Content on Structure and Chemical State of TiVN Films Prepared by Reactive DC Magnetron Co-Sputtering

Abstract: TiVN films were deposited on Si(100) wafers without external heating and biasing by reactive dc magnetron co-sputtering. Titanium and vanadium metals were used as sputtering targets. Ar and N2 gases were used as sputtering gas and reactive gas, respectively. The flow rates of Ar and N2 were 8 and 4 sccm, respectively. The Ti sputtering current (ITi) was kept constant at 0.6 Aand V sputtering current (IV) was varied from 0.4 to1.0 A. The deposition time for all the deposited films was 30 min. The effects of V sputtering current on the structure, surface and cross-sectional morphologies, and chemical composition and chemical state of the films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM), and X-ray photoelectron spectroscopy (XPS), respectively. It was found that all the prepared film formed (Ti,V)N solid solution. The lattice parameter was found to decrease while crystallite size, RMS roughness and film thickness increased with increasing V sputtering current. High resolution XPS spectra of the Ti 2p, V 2p and N 1s revealed that the fraction of Ti-N and V-N bonds increased as the V sputtering current increased. However, the V-N bond was observed only at a high V sputtering current.