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Chemical state
About: Chemical state is a research topic. Over the lifetime, 2378 publications have been published within this topic receiving 78183 citations.
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TL;DR: In this article, a facile technique for surface doping via a gas-melt reaction using thermal plasma as an excitation source was proposed, which was preliminarily explored owing to the broad photocatalytic applications of TiO2.
4 citations
TL;DR: In this paper, surface oxidation of Ti was carried out using KrF excimer laser in the presence of O2 and different colors were obtained by varying the number of laser pulses at the fixed laser fluence.
Abstract: Surface oxidation of Ti was carried out using KrF excimer laser in the presence of O2. Different colors were obtained by varying the number of laser pulses at the fixed laser fluence. X-ray photoelectron spectroscopy shows that the outmost surface is composed of TiO2 and the inner layer consists of TiO and Ti2O3 as well as TiO2. Fractions of titanium chemical states stabilized at 33% TiO, 63% TiO2, and 2% Ti2O3 with increasing number of laser pulses. The surface roughness tends to increase with number of laser pulses. It is suggested that compositional variation and morphological difference contribute to the laser-induced surface coloration.
4 citations
01 Jun 1994-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: The chemical states of implanted copper and bismuth in an oxide crystal were investigated by using X-ray photoelectron spectroscopy (XPS) in this article, where metal ions were implanted into strontium titanate single crystals with a fluence of 1 × 1016 ions/cm2 at an energy of 150 keV.
Abstract: The chemical states of implanted copper and bismuth in an oxide crystal were investigated by using X-ray photoelectron spectroscopy (XPS). Metal ions were implanted into semiconductive strontium titanate single crystals with a fluence of 1 × 1016 ions/cm2 at an energy of 150 keV. Subsequently oxygen ions were implanted with the appropriate fluences and energies to fit the depth profiles to those of implanted metals. Chemical states of ions were determined by XPS with sputter-etching. The state of implanted Cu which was Cu0 in the as-implanted sample could be changed to Cu1+ by the post-annealing at 800°C in air or by the co-implantation of oxygen. The state of implanted Bi which was Bi0 in the samples as-implanted, post-annealed, and oxygen co-implanted could be changed to Bi3+ by the co-implantation of oxygen followed by heating. Electrical properties were also measured.
4 citations
TL;DR: In this article, the authors used optical transmission, ESR, and wet chemical methods to determine concentration and the chemical state of silver, and NMR spectra as a probe of the glass structure.
Abstract: Interdiffusion of silver ions in SiO2-B2O3-AI2O3-R2O glasses where R=Na or K was investigated, using optical transmission, ESR, and wet chemical methods to determine concentration and the chemical state of silver, and NMR spectra as a probe of the glass structure. The concentration of silver introduced by ion exchange increased monotonically, as the line widths of27AI NMR spectra decreased. The sharp and narrow features of 27Al line shapes were broadened and the amount of colloidal silver produced by ion exchange decreased, as R2O/B2O3 approached unity with fixed AI2O3. The BO4 to BO3 ratio approached unity and the quadrupole coupling constant of BO3 units varied from 2.70 to 2.96 MHZ, as R2O/AI2O3, approached unity for fixed B2O3. These diverse data suggest a relation between silver diffusion and glass structure, although the phenomena of phase separation and the mixed-alkali effect could also influence silver-colloid formation in the glasses studied.
4 citations
TL;DR: In this paper, chemical states and photoluminescence of Si0.3Ge0.7-nitride film with a surface that was modified by N2+ ion implantation and rapid thermal annealing (RTA) were investigated.
Abstract: We investigated chemical states and photoluminescence of Si0.3Ge0.7-nitride film with a surface that was modified by N2+ ion implantation and rapid thermal annealing (RTA). By increasing the implantation time, the chemical bonding between Si and Ge was directly broken, and subnitrides were formed. We also observed the N2 vibration mode peak in the x-ray absorption spectra, but after RTA, this peak disappeared completely. SiNx was transformed to the stable Si3N4. However, GeNx with various chemical states, including Ge3N4 and nanocrystalline Ge, were formed. Photoluminescence observations at room temperature showed strong visible luminescence at wavelengths of 460 and 515 nm.
4 citations