Chemical state

About: Chemical state is a research topic. Over the lifetime, 2378 publications have been published within this topic receiving 78183 citations.

Preparation and Characterization of Al2O3 Thin Films for Catalytic Activity Studies

Abstract: In the present work, the surface properties of various Al oxide films were investigated. The oxide films were produced on a stainless steel by spray pyrolysis and cathodic deposition methods. The films obtained represent typical layers that can be used as a support in model systems to investigate alumina-based catalysts. Information about the chemical environment of the Al and O ions in the oxide films depending on the preparation conditions has been deduced from the binding energies of the Al 2p and O 1s electron core levels and corresponding Auger parameters.

In situ x-ray, electrochemical, and modeling investigation of the oxygen electrode activation.

Abstract: Oxygen electrodes of solid oxide electrochemical cells have been shown to improve under strong cathodic and anodic polarization. Our study investigates the mechanism causing such improvement, using in situ x-ray and electrochemical characterization and electrochemical impedance modeling of the oxygen electrodes. Several porous and dense thin-film model electrodes of La{sub 0.8}Sr{sub 0.2}MnO{sub 3} (LSM) and La{sub 0.8}Sr{sub 0.2}MnO{sub 3} (LCM) on single crystal yttria-stabilized zirconia (YSZ) electrolytes have been analyzed in situ at the Advanced Photon Source (APS) using x-ray reflectivity and x-ray absorption near edge spectroscopy (XANES) at the Mn K-edge and La LII-edge. In situ x-ray reflectivity analysis show that no clear correlation between the polarization of the electrode and any further changes in the roughness of the LSM/YSZ interface exist. XANES measurements illustrate that the cathodic or anodic dc polarization at high temperature induces no detectable changes in Mn chemical state either in the bulk or at the surface of the LCM and LSM electrodes on YSZ, while the La chemical state changes reversibly at the electrode surface. This field-induced chemical change of La at the surface of electrodes is assumed to be a cause of the electrochemical activation through enhanced surface exchange of oxygen on themore » doped lanthanum manganite electrodes.« less

Chemical effect of inert argon beam on nitride nanolayer formed by ion implantation into GaAs surface

Abstract: The composition of a nitride nanolayer formed on a GaAs(100) surface by the implantation of ions with an energy of Ei = 2.5 keV and the chemical state of nitrogen in this layer have been studied by the method of Auger electron spectroscopy. It is established that, in addition to GaN, a GaAsN solid solution phase is formed in the ion-implanted layer. The energies of N KVV Auger electron transitions in these phases are determined as EA(GaN) = 379.8 ± 0.2 eV and EA(GaAsN) = 382.8 ± 0.2 eV (relative to the Fermi level), which allowed the distribution of nitrogen between these phases to be evaluated as [N(GaN)] = 70% and [N(GaAsN)] = 30%. It is established that an argon ion beam produces a chemical effect on the nitride layer, which is related to a cascade mixing of the material. Under the action of the argon ion bombardment, the distribution of nitrogen in the indicated phases changes to opposite. As a result a nitride nanolayer is formed in which the narrow-bandgap semiconductor (GaAsN) predominates rather than the wide-bandgap component (GaN).