Topic
Chemical state
About: Chemical state is a research topic. Over the lifetime, 2378 publications have been published within this topic receiving 78183 citations.
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TL;DR: An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy and low-temperature photoluminescence and Cu atoms showed different behaviors in theZnO matrix as a function of oxygen gas pressure.
47 citations
TL;DR: Orthorhombic CoSe2 catalysts with different surface structures and chemical states were tuned by precisely controlling the solvothermal synthesis temperature within a narrow range, instructive for selenide catalyst design and fabrication.
47 citations
TL;DR: In this paper, metal impurity precipitates were measured using synchrotron-based X-ray fluorescence (μ-XRF) and Xray absorption spectroscopy (XAS) with a 1-2μm 2 spatial resolution.
47 citations
TL;DR: In this paper, the authors show that reversible thiophene adsorption results in decomposition to surface C, surface S, and gaseous dihydrogen, and the chemical states of the carbon and sulfur as identified by X-ray photoelectron spectroscopy are carbidic and sulfidic.
46 citations
TL;DR: In this paper, a detailed study of the electronic structure and chemical state of high-quality stoichiometric EuO and O-rich thin films grown directly on silicon without any buffer layer using hard x-ray photoemission spectroscopy was presented.
Abstract: We present a detailed study of the electronic structure and chemical state of high-quality stoichiometric EuO and O-rich ${\mathrm{Eu}}_{1}{\mathrm{O}}_{1+x}$ thin films grown directly on silicon without any buffer layer using hard x-ray photoemission spectroscopy (HAXPES). We determine the EuO oxidation state from a consistent quantitative peak analysis of $4f$ valence band and $3d$ core-level spectra. The results prove that nearly ideal, stoichiometric, and homogeneous EuO thin films can be grown on silicon, with a uniform depth distribution of divalent Eu cations. Furthermore, we identify the chemical stability of the EuO/silicon interface from Si $2p$ core-level photoemission. This work clearly demonstrates the successful integration of high-quality EuO thin films directly on silicon, opening up the pathway for the future incorporation of this functional magnetic oxide into silicon-based spintronic devices.
46 citations