Showing papers on "Chemical vapor deposition published in 1969"

The preparation and properties of vapor- deposited single-crystalline GaN

Abstract: Vapor deposited GaN single crystals tested for electrical and optical properties, determining band gap energy, electron concentration, etc

Magnetic oxide films

Abstract: Polycrystalline and epitaxial magnetic oxide films have been fabricated by several investigators. This paper deals predominantly with epitaxial films grown by chemical vapor deposition. The majority of the discussion is concerned with substrates, the deposition process, and film characterization. Where possible, comparisons are made with bulk crystals and with films produced by other fabrication techniques.

Dielectric Properties of Reactively Sputtered Films of Aluminum Nitride

Abstract: Resistivity, capacitance and dielectric loss measurements for diode reactive sputtering grown AlN films and film sandwich structures of Ta, Au and Al films

Ferromagnetic Resonance in Epitaxial Garnet Thin Films

Abstract: The chemical vapor deposition process for growing epitaxial yttrium iron garnet (YIG) has matured to the point where films of varying geometry and thickness from ½ to as great as 40 μ can be readily grown on several orientations of gadolinium gallium garnet, yttrium aluminum garnet, and YIG, itself. As a measure of the quality of the films, line widths (at 9.4 GHz and room temperature) as small as 0.6 and 1.4 Oe were obtained in samples with substrates removed and intact, respectively, without a major effort toward improvement. Magnetostatic modes, exchange modes, and ferromagnetic normal modes having comparable exchange and demagnetization energies were observed in these films and in thin bulk disks and were explained in detail by a new theory which applies not only to films, but also to samples of arbitrary shape and size, and includes the effects of exchange and demagnetization energies. The frequencies of the general normal modes were calculated by casting the linearized equation of motion of the magn...

PRODUCTION OF VAPOR-DEPOSITED Nb{11 B{11 Sn CONDUCTOR MATERIAL

Abstract: Nb3Sn superconductor material of increased critical current density is obtained by carrying out vapor deposition by decomposition of chlorides on a heated corrosion-resistant substrate in the presence of oxygen, for example 0.5 percent oxygen, in a mixed hydrogen and argon gas stream.

Sensor system for a vacuum deposition apparatus

Abstract: Apparatus for accurately determining, continuously, the coating thickness deposited on an article during a vapor deposition process. The apparatus utilizes a unique pickup plate and straingauged cantilever beam positioned within the vacuum chamber to continuously record the coating thickness deposited on the article.

Chemical vapor deposition of dielectric thin films of rutile

Abstract: Thin films of titanium dioxide in the rutile form are deposited by chemical vapor deposition technique on a heated surface of a substrate by reacting titanium tetrachloride with oxygen, in the range of temperatures from 700 DEG to 900 DEG C.

Chemical Processes in SiC Formation by Reactive Deposition and Chemical Conversion

Abstract: Chemical processes in silicon carbide due to reactive deposition and chemical conversion, noting silicon growth mechanism involving outward diffusion

Vapor deposition of alloys

Abstract: In the coating of substrates with alloys containing elemental constituents characterized by significant differences in melting point and vapor pressure under the coating conditions, the material to be coated is provided as a plurality of individual elements comprising the coating constituents and the time-temperature relationship for each constituent in the melting cycle is adjusted to compensate for the varying degrees of difficulty in vaporizing the respective constituents.

Formation of refractory coatings on steel without loss of temper of steel

Abstract: Improved refractory coatings are provided in processes involving the chemical vapor phase deposition of a refractory coating upon a substrate by initially coating the substrate with a continuous adherent layer of substantially pure elemental material. For example, in a process for the vapor deposition of titanium carbonitride on a substrate such as stainless steel, by the contact of vaporous reactants containing titanium, carbon, and nitrogen, the substrate is initially plated with a continuous adherent layer of pure nickel, and the titanium carbonitride coating is applied over the nickel.

Effect of Oxygen on the Formation of Germanium Films

Abstract: The influence of background oxygen pressure at levels between 10−10 and 10−6 Torr on the crystallographic order of Ge films evaporated on (111) Ge was investigated. The substrates were chemically cleaned and/or subjected to thermal in situ cleaning. Oxygen partial pressures as low as ∼5×10−9 Torr were found to increase the epitaxial temperature by 50–75° C, and the amorphous-polycrystalline transition by 125°–150° C for substrate temperatures in the range 150–310° C. At partial pressures of ∼5×10−8 Torr, the oxygen effect increases with decreasing substrate temperature and increasing deposition rate, while preannealing of the substrates at 600° C eliminates subsequent oxygen effects. The observations are interpreted in terms of oxide formation; they offer an explanation for the appreciable decrease in epitaxial temperature for films deposited in UHV compared to conventional vacua.

Process for the vapor deposition of metals

Abstract: A method of vapor depositing metal on a substrate by reducing titanium and chromium halides with hydrogen under controlled conditions to chemically vapor deposit titanium and chromium alloys on the substrate. Best results are obtained when the halides are introduced into the deposition chamber as a gaseous mixture with an inert gas carrier.

Fine-grain tungsten by chemical vapor deposition☆

Abstract: A method is described of obtaining fine-grain, non-columnar tungsten (W) by chemical vapor deposition (CVD). Typical CVD tungsten grows columnar grains perpendicular to a heated surface when deposited from its halides, generally WF or WCl 6 . The present method involves the partial nitriding of the tungsten to W 2 N. during deposition, and subsequent decomposition of the W 2 N. The presence of this second phase (W 2 N) alters the growth pattern of the depositing tungsten and eliminates columnar grain growth.

Monolithic integrated-circuit structure and method of fabrication

Abstract: Polycrystalline silicon having a needlelike oriented grain structure is found to have anisotropic electrical and thermal properties. A monolithic integrated-circuit structure having a plurality of monocrystalline silicon islands is fabricated in a polycrystalline silicon matrix having such a grain structure, with the grain direction oriented to provide maximum electrical resistivity between the monocrystalline islands, and maximum thermal conductivity toward a header or other heat sink. In one embodiment, the monocrystalline islands and polycrystalline matrix are grown by vapor deposition of silicon on a monocrystalline substrate provided with a suitable masking pattern, whereby the polycrystalline material grows on the mask concurrently with the growth of monocrystalline silicon on the unmasked areas of the substrate.

Oriented Te thin films.

Abstract: Vapor deposited tellurium thin films orientation, noting effect of characteristic spiral chain structure along c-axis

Chromium Coatings Prepared by Chemical Vapor Deposition

Abstract: The formation by chemical vapor deposition (CVD) of chromium metal as coatings on various substrates was studied using the reaction Process parameters of temperature, gas flow rate, and chromium chloride concentration influenced the deposition rate. The chromium metal deposited had properties similar to high‐purity "iodide" chromium. Surface appearance and grain structure differed from materials such as titanium, deposited in earlier studies. This is suggested to result from difference in the controlling mechanism of the reduction reaction and evidence for this mechanism was observed.

Evaporation filament assembly

Abstract: An evaporation filament for the vapor deposition of metallic films consists of a stabilized tungsten coil having parallel legs. A ceramic support is attached to the legs and prevents distortion of the coil during operation thereof.

Method of applying a zinc coating to a sheet-steel base

Abstract: LOW-CARBON STEEL STRIP IS CONTINUOUSLY COATED WITH A THIN LAYER OF IRON BY VAPOR DEPOSITION WHILE AT A TEMPERATURE OF AT LEAST 350*F. UNDER AN ATMOSPHERIC PRESSURE OF NOT MORE THAN 10-4 TORR. THE IRON-COATED STRIP IS THEN SUBJECTED TO A FLASH COATING OF ZINC BY VAPOR DEPOSITION UNDER SIMILAR CONDITIONS. THE STRIP IS THEN COOLED, TO REMOVED THE HEAT ADSORBED BY CONDENSATION OF METAL VAPOR THEREON, AND A FURTHER COATING OF ZINC APPLIED THERETO BY ANY DESIRED METHOD CONVENIENTLY UNDER THE SAME OR INCREASED ATMOSPHERIC PRESSURE, THE TOTAL THICKNESS OF ZINC APPLIED BEING LIMTED TO LESS THAN .001".

Errata: In Situ Transmission Electronmicroscopic Study of Crystal Growth by Chemical Vapor Deposition

Abstract: A gas-reaction chamber has been constructed, which allows the in situ transmission electronmicroscopic study of gas-solid reactions at temperatures up to 900 °–1000 °C. The morphological and crystallographic properties of iron, of iron and wustite, and of magnetite depositing epitaxially on (111) gold substrates, either by the thermal decomposition of Fe(CO)5 or by decomposition and chemical reaction from Fe(CO)5–H2 or from Fe(CO)5–H2–H2O mixtures, are described. In other examples, the oxidation of the initially depositing iron is illustrated. In some of the experiments, polycrystalline iron foils were substituted for the (111) gold substrates, and a profound effect of iron deposition on the rate of grain growth in the iron foil was found. Coalescence of iron crystallites and high mobility of the deposit were observed. Incidental observations on the decomposition of Ni(CO)4 are described. These permit comparison of the epitaxial relationships in the Ni–Au and NiO–Au systems with those of the corresponding...

Emission of high‐energy electrons during alloy‐evaporation processes on hot metal filaments

Abstract: Hot metal filaments are often used to evaporate another metal for deposition of thin films. If the metal being evaporated can alloy with the filament, a significant number of high‐energy electrons are emitted during the alloying‐evaporation process.

Vapor deposition apparatus

Abstract: An apparatus for producing monocrystalline deposits on a substrate by vacuum evaporation. The source of vapor to be deposited is a rotating cylinder which is off center with respect to an electron beam which strikes it and causes vaporization. The chamber walls are grounded and the substrate is held at a low positive potential rather than a high negative potential as is the usual practice.

Chemical vapor deposition of boron carbide.

Abstract: : The chemical vapor deposition of boron carbide (B4C) was studied with the objective of preparing unusually hard specimens. Diamond pyramid microhardnesses at 100 gram load as high as 4800 kg/sq mm (20 percent greater than the value of 4000 kg/sq mm for hot-pressed B4C) were obtained on deposits prepared from BCl3 and CH4 at 2000-2100C. Massive specimens of such deposits could not be produced, but thick deposits were obtained at 1300C using a large excess of H2 and CH4 with the BCl3. Hardness and modulus of these low temperature deposits were normal (4000 kg/sq mm and 58,000,000 lb/sq in., respectively), and were not increased by thermal annealing. Doping of B4C with silicon or titanium had no substantial effect on hardness. (Author)

Method of coating a plurality of substrates by vapor deposition

Abstract: In the processes and method for forming protective coatings on metals, particularly the nickel-base and cobalt-base superalloys, by deposition or vacuum, the positioning of a plurality of substrates of complex geometry in the chamber in a predetermined region of vapor isodensity.

Advantages of vapor-plated phosphosilicate films in large-scale integrated circuit arrays

Abstract: The yield and reliability of silicon integrated circuits are significantly increased by the application of a chemical vapor deposited phosphosilicate layer after first level metallization. These benefits are directly attributable to the physical and electronic properties of phosphosilicate films. A number of limitations of planar silicon devices, such as susceptibility of the metallization to scratches or corrosion effects, and the possibility of surface-related instability due to ion migration effects are overcome by this process. In multilevel metallized large-scale integrated circuit arrays, deposited phosphosilicate films are a very satisfactory dielectric between metal layers, providing the capability of reliable, low-resistance interconnections. Used as either passive films on single-scale metallized devices, or as the second dielectric layer in multilevel metallized devices, chemical vapor deposited phosphosilicate films have been found to possess a number of significant advantages compared to silicon dioxide films deposited from silane under similar conditions. Results of a comprehensive study of the properties of bipolar and MOS devices of various degrees of complexity, coated with phosphosilicate films, will be presented.