Showing papers on "Chemical vapor deposition published in 2000"

Structure and stability of ultrathin zirconium oxide layers on Si(001)

Abstract: We have examined the structure of ultrathin ZrO2 layers on Si(001) using medium energy ion scattering and cross-sectional transmission electron microscopy. Films can be deposited on SiO2 layers with highly abrupt interfaces by atomic layer deposition. On HF stripped Si(001), nucleation was inhibited, resulting in poorer film morphology. ZrO2 showed remarkable stability against silicate formation, with no intermixing even after high temperature oxidation. The oxide is vulnerable to high temperature vacuum annealing, with silicidation occurring at temperatures above 900 °C.

Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

Abstract: A chemical approach to atomic layer deposition (ALD) of oxide thin films is reported here. Instead of using water or other compounds for an oxygen source, oxygen is obtained from a metal alkoxide, which serves as both an oxygen and a metal source when it reacts with another metal compound such as a metal chloride or a metal alkyl. These reactions generally enable deposition of oxides of many metals. With this approach, an alumina film has been deposited on silicon without creating an interfacial silicon oxide layer that otherwise forms easily. This finding adds to the other benefits of the ALD method, especially the atomic-level thickness control and excellent uniformity, and takes a major step toward the scientifically challenging and technologically important task of replacing silica as the gate dielectric in the future generations of metal oxide semiconductor field effect transistors.

Plasma-induced alignment of carbon nanotubes

Abstract: Uniform films of well-aligned carbon nanotubes have been grown using microwave plasma-enhanced chemical vapor deposition. It is shown that nanotubes can be grown on contoured surfaces and aligned in a direction always perpendicular to the local substrate surface. The alignment is primarily induced by the electrical self-bias field imposed on the substrate surface from the plasma environment. It is found that switching the plasma source off effectively turns the alignment mechanism off, leading to a smooth transition between the plasma-grown straight nanotubes and the thermally grown “curly” nanotubes. The nanotubes grow at a surprisingly high rate of ∼100 nm/s in our plasma process, which may be important for large-scale commercial production of nanotubes.

Silicon nanowire devices

Abstract: Transport measurements were carried out on 15–35 nm diameter silicon nanowires grown using SiH4 chemical vapor deposition via Au or Zn particle-nucleated vapor-liquid-solid growth at 440°C. Both Al and Ti/Au contacts to the wires were investigated. The wires, as produced, were essentially intrinsic, although Au nucleated wires exhibited a slightly higher conductance. Thermal treatment of the fabricated devices resulted in better electrical contacts, as well as diffusion of dopant atoms into the nanowires, and increased the nanowire conductance by as much as 10^4. Three terminal devices indicate that the doping of the wires is p type.

Handbook of ceramic hard materials.

Abstract: Introduction: Novel Ultrahard Materials (A. Zerr & R. Riedel) STRUCTURES AND PROPERTIES Structural Chemistry of Hard Materials (W. Jeitschko, et al.) Phase Transitions and Material Synthesis using the CO 2 -Laser Heating Technique in a Diamond Cell (A. Zerr, et al.) Mechanical Properties and their Relation to Microstructure (D. Sherman & D. Brandon) Nanostructured Superhard Materials (S. Veprek) Corrosion of Hard Materials (K. Nickel & Y. Gogotsi) Interrelations Between the Influences of Indentation Size, Surface State, Grain Size, Grain-Boundary Deformation, and Temperature on the Hardness of Ceramics (A. Krell) Transition Metal Carbides, Nitrides, and Carbonitrides (W. Lengauer) New Superhard Materials: Carbon and Silicon Nitrides (J. Lowther) Effective Doping in Novel sp 2 Bonded Carbon Allotropes (G. Jungnickel, et al.) SYNTHESIS AND PROCESSING Directed Metal Oxidation (V. Jayaram & D. Brandon) Self-Propagating High-Temperature Synthesis of Hard Materials (Z. Munir & U. Anselmi-Tamburini) Hydrothermal Synthesis of Diamond (K. Nickel, et al.) Chemical Vapor Deposition of Diamond Films (C.-P. Klages) Vapor Phase Deposition of Cubic Boron Nitride Films (K. Bewilogua & F. Richter) Polymer to Ceramic Transformation: Processing of Ceramic Bodies and Thin Films (G. Soraru & P. Colombo) MATERIALS AND APPLICATIONS Diamond Materials and their Applications (R. Caveney) Applications of Diamond Synthesized by Chemical Vapor Deposition (R. Sussmann) Diamond-like Carbon Films (C.-P. Klages & K. Bewilogua) Ceramics Based on Alumina: Increasing the Hardness for Tool Applications (A. Krell) Silicon Carbide Based Hard Materials (K. Schwetz) Silicon Nitride Based Hard Materials (M. Herrmann, et al.) Boride-Based Hard Materials (R. Telle, et al.) The Hardness of Tungsten Carbide-Cobalt Hardmetal (S. Luyckx) Data Collection of Properties of Hard Materials (G. Berg, et al.) Index

CVD Growth of Boron Nitride Nanotubes

Abstract: Multiwalled BN nanotubes are grown from nickel boride catalyst particles by chemical vapor deposition at 1000−1100 °C using borazine, B3N3H6, as the precursor. This precursor is generated in situ from molten salt that forms from mixtures of (NH4)2SO4, NaBH4, and Co3O4 at 300−400 °C. The BN nanotubes have concentric-tube structures, are free of internal closures, have crystalline walls, and exhibit lengths of up to ∼5 μm. The nanotubes often possess bulbous, flag-like, or club-like tip closures. A root-growth mechanism is proposed for the catalyzed process.

Ultraviolet detectors based on epitaxial ZnO films grown by MOVCD

Abstract: High-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350°C to 600°C. In-situ nitrogen compensation doping was performed using NH3. Microstructural and optical properties of the films, as well as the N-doping effects, were studied. The metal-semiconductor-metal ultraviolet sensitive photodetectors were fabricated on N-doped epitaxial ZnO films. The detector showed fast photoresponse, with a rise time of 1 µs and a fall time of 1.5 µs. Low-frequency photoresponsivity, on the order of 400 A/W at 5 V bias, was obtained.

PZT thin films for microsensors and actuators: Where do we stand?

Abstract: This paper reviews deposition, integration, and device fabrication of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) films for applications in micro-electromechanical systems. An ultrasonic micromotor is described as an example. A summary of the published data on piezoelectric properties is given. The figures of merit for various applications are discussed. Some considerations and results on operation, reliability, and depolarization of PZT thin films are presented. The state of the art allows some preliminary conclusions.

Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition

Abstract: A new method and apparatus for avoiding contamination of films deposited in layered depositions, such as Atomic Layer Deposition (ALD) and other sequential chemical vapor deposition (CVD) processes, is taught, wherein CVD-deposited contamination of ALD films is prevented by use of a pre-reaction chamber that effectively causes otherwise-contaminating gaseous constituents to deposit on wall elements of gas-delivery apparatus prior to entering the ALD chamber.

The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modeling

Abstract: The refractive indices of AlxGa1−xAs epitaxial layers (0.176⩽x⩽1) are accurately determined below the band gap to wavelengths, λ<3 μm. The layers are grown on GaAs substrates by molecular beam epitaxy metal organic and chemical vapor deposition with thicknesses ranging from 4 to 10 μm. They form improper waveguide structures with the GaAs substrate. The measurements are based on the excitation of the improper waveguide modes with grating couplers at 23 °C. The refractive indices of the layers are derived from the modal propagation constants in the range of 730 nm<λ<830 nm with an estimated uncertainty of Δn=5×10−4. The temperature coefficient of the refractive index is investigated in the same spectral range. From the effective indices of the TE and TM modes, we derive the strain-induced birefringence and the elasto-optic coefficients. High-resolution x-ray diffraction is used to determine the strain of the layers. The layer compositions are obtained with inductively coupled plasma atomic emission spectro...

Synthesis of diamondlike carbon films with superlow friction and wear properties

Abstract: In this study, the authors introduce a new diamondlike carbon (DLC) film providing a friction coefficient of 0.001 and wear rates of 10{sup {minus}9} to 10{sup {minus}10} mm{sup 3}/N.m in inert-gas environments (e.g., dry nitrogen and argon). The film was grown on steel and sapphire substrates in a plasma enhanced chemical vapor deposition system that uses using a hydrogen-rich plasma. Employing a combination of surface and structure analytical techniques, they explored the structural chemistry of the resultant DLC films and correlated these findings with the friction and wear mechanisms of the films. The results of tribological tests under a 10-N load (creating initial peak Hertz pressures of 1 and 2.2 GPa on steel and sapphire test pairs, respectively) and at 0.2 to 0.5 m/s sliding velocities indicated that a close correlation exists between the friction and wear coefficients of DLC films and the source gas chemistry. Specifically, films grown in source gases with higher hydrogen-to-carbon ratios had the lowest fiction coefficients and the highest wear resistance. The lowest friction coefficient (0.001) was achieved with a film on sapphire substrates produced in a gas discharge plasma consisting of 25% methane and 75% hydrogen.

Reduced electromigration and stressed induced migration of Cu wires by surface coating

Abstract: The idea of the invention is to coat the free surface of patterned Cu conducting lines in on-chip interconnections (BEOL) wiring by a 1-20 nm thick metal layer prior to deposition of the interlevel dielectric. This coating is sufficiently thin so as to obviate the need for additional planarization by polishing, while providing protection against oxidation and surface, or interface, diffusion of Cu which has been identified by the inventors as the leading contributor to metal line failure by electromigration and thermal stress voiding. Also, the metal layer increases the adhesion strength between the Cu and dielectric so as to further increase lifetime and facilitate process yield. The free surface is a direct result of the CMP (chemical mechanical polishing) in a damascene process or in a dry etching process by which Cu wiring is patterned. It is proposed that the metal capping layer be deposited by a selective process onto the Cu to minimize further processing. We have used electroless metal coatings, such as CoWP, CoSnP and Pd, to illustrate significant reliability benefits, although chemical vapor deposition (CVD) of metals or metal forming compounds can be employed.

High ε gate dielectrics Gd2O3 and Y2O3 for silicon

Abstract: We report on growth and characterization of both epitaxial and amorphous films Gd2O3 of (e=14) and Y2O3(e=18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor deposition. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single-domain films in the Mn2O3 structure. Typical electrical leakage results are 10−3 A/cm2 at 1 V for single domain epitaxial Gd2O3 and Y2O3 films with an equivalent SiO2 thickness, teq of 15 A, and 10−6 A/cm2 at 1 V for smooth amorphous Y2O3 films (e=18) with a teq of only 10 A. For all the Gd2O3 films, the absence of SiO2 segregation at the interface is established from infrared absorption measurements.

Controlling the diameter, growth rate, and density of vertically aligned carbon nanotubes synthesized by microwave plasma-enhanced chemical vapor deposition

Abstract: Vertically aligned carbon nanotubes were synthesized on Ni-deposited Si substrates using microwave plasma-enhanced chemical vapor deposition. The grain size of Ni thin films varied with the rf power density during the rf magnetron sputtering process. We found that the diameter, growth rate, and density of carbon nanotubes could be controlled systematically by the grain size of Ni thin films. With decreasing the grain size of Ni thin films, the diameter of the nanotubes decreased, whereas the growth rate and density increased. High-resolution transmission electron microscope images clearly demonstrated synthesized nanotubes to be multiwalled.

High rate growth of microcrystalline silicon at low temperatures

Abstract: A high rate growth method of microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetic positive ion and atomic hydrogen impingement on to a growing surface have important affects and that atomic hydrogen density needs to increase correspondingly to the increasing growth rate, while keeping ion bombardment less. Based on this guide line, a novel control of plasma is demonstrated using a high deposition pressure of 2–4 Torr combined with a depletion condition of source gas (SiH 4 ) at a high RF power (a high-pressure-depletion method) and consequently a growth rate of 1.5 nm/s has been achieved using a conventional radio frequency plasma enhanced chemical vapor deposition at 13.56 MHz. Use of a very high frequency plasma at 60 MHz further increases the growth rate up to 5 nm/s and good crystallinity is maintained up to 3.8 nm/s at 250°C. Atomic hydrogen-mediated growth of crystalline silicon at low temperatures is discussed.

Oxidation of carboxylic acids at boron-doped diamond electrodes for wastewater treatment

Abstract: Thin boron-doped diamond films have been prepared by HF CVD (hot filament chemical vapour deposition technique) on conductive p-Si substrate (Si/Diamond). The morphology of these Si/diamond electrodes has been investigated by SEM and Raman spectroscopy. The electrochemical behaviour of the Si/diamond electrodes in 1 M H2SO4 and in 1 M H2SO4 + carboxylic acids has been investigated by cyclic voltammetry. Finally, the electrochemical oxidation of some simple carboxylic acids (acetic, formic, oxalic) has been investigated by bulk electrolysis. These acids can be oxidized at Si/diamond anodes to CO2, in the potential region of water and/or the supporting electrolyte decomposition, with high current efficiency.

High quality Ge on Si by epitaxial necking

Abstract: We show that pure Ge grown selectively on SiO2/Si substrates in 100 nm holes is highly perfect at the top surface compared to conventional Ge lattice-mismatched growth on planar Si substrates. This result is achieved through a combination of interferometric lithography SiO2/Si substrate patterning and ultrahigh vacuum chemical vapor deposition Ge selective epitaxial growth. This “epitaxial necking,” in which threading dislocations are blocked at oxide sidewalls, shows promise for dislocation filtering and the fabrication of low-defect density Ge on Si. Defects at the Ge film surface only arise at the merging of epitaxial lateral overgrowth fronts from neighboring holes. These results confirm that epitaxial necking can be used to reduce threading dislocation density in lattice-mismatched systems.

Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers

Abstract: Thin films of inert, refractory materials are used in semiconductor interconnect applications as diffusion barriers, seed, and adhesion layers. A typical example is the use of a thin, conformal Ta or Ti/TiN films on the walls of a dielectric trench or via which reduces or eliminates out-diffusion of the primary conductor, usually Cu, into the dielectric. Atomic layer deposition is a known technique which is intrinsically conformal and is appropriate for this application. Plasma enhancement of the process allows deposition at significantly lower temperatures than conventional chemical vapor deposition, which is a requirement for low-k dielectrics. Tantalum films deposited at 25–400 °C using ALD with a TaCl5 precursor and atomic hydrogen as the reactive species at up to a rate of 1.67 Ang/cycle are amorphous, conformal, and show moderate or controllable levels of impurities; primarily oxygen and a small level of Cl. Similar results have been observed for Ti using TiCl4 as a precursor. The process scales to manufacturing dimensions and applications and will facilitate the extension of interconnect technology beyond (below) 100 nm dimensions.Thin films of inert, refractory materials are used in semiconductor interconnect applications as diffusion barriers, seed, and adhesion layers. A typical example is the use of a thin, conformal Ta or Ti/TiN films on the walls of a dielectric trench or via which reduces or eliminates out-diffusion of the primary conductor, usually Cu, into the dielectric. Atomic layer deposition is a known technique which is intrinsically conformal and is appropriate for this application. Plasma enhancement of the process allows deposition at significantly lower temperatures than conventional chemical vapor deposition, which is a requirement for low-k dielectrics. Tantalum films deposited at 25–400 °C using ALD with a TaCl5 precursor and atomic hydrogen as the reactive species at up to a rate of 1.67 Ang/cycle are amorphous, conformal, and show moderate or controllable levels of impurities; primarily oxygen and a small level of Cl. Similar results have been observed for Ti using TiCl4 as a precursor. The process scales to ...

Nanoscopic wire-based devices, arrays, and methods of their manufacture

Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.

Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates

Abstract: We have fabricated Ge/Si heterojunction photodetectors with high responsivities of 550 mA/W at 1.32 μm and 250 mA/W at 1.55 μm and time responses shorter than 850 ps. High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition followed by cyclic thermal annealing. The beneficial effect of the post-growth thermal annealing on the electrical properties of Ge epilayers, due to the reduction of threading-dislocation densities, is confirmed by the dramatic enhancement of the performance of the photodetectors.

Growth model of bamboo-shaped carbon nanotubes by thermal chemical vapor deposition

Abstract: Vertically aligned carbon nanotubes were grown on iron-deposited silicon oxide substrate by thermal chemical vapor deposition of acetylene The carbon nanotubes have no encapsulated iron particles at the closed tip and a bamboo structure in which the curvature of compartment layers is directed to the tip A base growth model is suggested for the bamboo-shaped carbon nanotubes grown under our experimental conditions

Carbon nanotube atomic force microscopy tips: Direct growth by chemical vapor deposition and application to high-resolution imaging

Abstract: Carbon nanotubes are potentially ideal atomic force microscopy probes because they can have diameters as small as one nanometer, have robust mechanical properties, and can be specifically functionalized with chemical and biological probes at the tip ends. This communication describes methods for the direct growth of carbon nanotube tips by chemical vapor deposition (CVD) using ethylene and iron catalysts deposited on commercial silicon-cantilever-tip assemblies. Scanning electron microscopy and transmission electron microscopy measurements demonstrate that multiwalled nanotube and single-walled nanotube tips can be grown by predictable variations in the CVD growth conditions. Force-displacement measurements made on the tips show that they buckle elastically and have very small (≤ 100 pN) nonspecific adhesion on mica surfaces in air. Analysis of images recorded on gold nanoparticle standards shows that these multi- and single-walled carbon nanotube tips have radii of curvature of 3–6 and 2–4 nm, respectively. Moreover, the nanotube tip radii determined from the nanoparticle images are consistent with those determined directly by transmission electron microscopy imaging of the nanotube ends. These molecular-scale CVD nanotube probes have been used to image isolated IgG and GroES proteins at high-resolution.

Field emission of different oriented carbon nanotubes

Abstract: Field emission data from aligned high-density carbon nanotubes (CNTs) with orientations parallel, 45°, and perpendicular to the substrate have been obtained The large-area uniformly distributed CNTs were synthesized on smooth nickel substrates via dc plasma-assisted hot filament chemical vapor deposition CNTs with diameters in the range of 100–200 nm were employed in this study The different orientations were obtained by changing the angle between the substrate and the electrical field direction The growth mechanism for the alignment and orientation control of CNTs has been discussed The CNTs oriented parallel to the substrate have a lower onset applied field than those oriented perpendicular to the substrate This result indicates that electrons can emit from the body of the CNT, which means that the CNT can be used as a linear emitter The small radius of the tube wall and the existence of defects are suggested as the reasons for the emission of electrons from the body of the tubes

Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

Abstract: The effect of Si doping on the strain and microstructure in GaN films grown on sapphire by metalorganic chemical vapor deposition was investigated. Strain was measured quantitatively by x-ray diffraction, Raman spectroscopy, and wafer curvature techniques. It was found that for a Si concentration of 2×1019 cm−3, the threshold for crack formation during film growth was 2.0 μm. Transmission electron microscopy and micro-Raman observations showed that cracking proceeds without plastic deformation (i.e., dislocation motion), and occurs catastrophically along the low energy {11_00} cleavage plane of GaN. First-principles calculations were used to show that the substitution of Si for Ga in the lattice causes only negligible changes in the lattice constant. The cracking is attributed to tensile stress in the film present at the growth temperature. The increase in tensile stress caused by Si doping is discussed in terms of a crystallite coalescence model.

Thin film semiconductor deposition on free-standing ZnO columns

Abstract: We report the deposition of a-Si:H on thin films of free-standing single crystalline ZnO columns. The ZnO columns have a height of several μm and a diameter between 100 and 200 nm. The ZnO films are prepared in electrodeposition and have considerable potential for use in photoelectric thin film devices. Morphology, electronic parameters, and basic optical behavior, such as reflectance and light trapping efficiency, are reported. Amorphous silicon is deposited on the columns as a continuous smooth film with conformal coverage. Some possibilities of using these films in devices are discussed.

Method and apparatus for reducing particle contamination on wafer backside during CVD process

Abstract: Backside particle contamination of semiconductor wafers subjected to chemical vapor deposition is significantly reduced by optimizing various process parameters, alone or in combination. A high quality oxide seasoning layer is deposited to improve adhesion and trapping of contaminants remaining after a prior chamber cleaning step. Second, wafer pre-heating reduces thermal stress on the wafer during physical contact between the wafer and heater. Third, the duration of the gas stabilization flow of thermally reactive process gas species prior to CVD reaction is reduced, thereby preventing side products produced during this stabilization flow from affecting the wafer backside. Fourth, the wafer heater is redesigned to minimize physical contact between the heater surface and the wafer backside. Redesign of the wafer heater may include providing only a few, small projections from the top wafer surface, and also may include providing a continuous circumferential rim supporting the edge of the wafer to interfere with the flow of process gases to the wafer backside during processing.

High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

Abstract: High carbon concentrations at distinct regions at thermally-grown SiO2/6H-SiC(0001) interfaces have been detected by electron energy loss spectroscopy (EELS). The thickness of these C-rich regions is estimated to be 10-15 Angstrom. The oxides were grown on n-type 6H-SiC at 1100 degrees C in a wet O-2 ambient for 4 h immediately after cleaning the substrates with the complete RCA process. In contrast, C-rich regions were not detected from EELS analyses of thermally grown SiO2/Si interfaces nor of chemical vapor deposition deposited SiO2/SiC interfaces. Silicon-rich layers within the SiC substrate adjacent to the thermally grown SiO2/SiC interface were also evident. The interface state density D-it in metal-oxide-SiC diodes (with thermally grown SiO2) was approximately 9x10(11) cm(-2) eV(-1) at E- E-v=2.0 eV, which compares well with reported values for SiC metal-oxide-semiconductor (MOS) diodes that have not received a postoxidation anneal. The C-rich regions and the change in SiC stoichiometry may be associated with the higher than desirable D-it's and the low channel mobilities in SiC-based MOS field effect transistors. (C) 2000 American Institute of Physics. [S0003-6951(00)01940-9].