Showing papers on "Chemical vapor deposition published in 2008"

Bulk production of a new form of sp(2) carbon: crystalline graphene nanoribbons.

Abstract: We report the use of chemical vapor deposition (CVD) for the bulk production (grams per day) of long, thin, and highly crystalline graphene ribbons (<20−30 μm in length) exhibiting widths of 20−300 nm and small thicknesses (2−40 layers). These layers usually exhibit perfect ABAB... stacking as in graphite crystals. The structure of the ribbons has been carefully characterized by several techniques and the electronic transport and gas adsorption properties have been measured. With this material available to researchers, it should be possible to develop new applications and physicochemical phenomena associated with layered graphene.

Synthesis of few-layer graphene via microwave plasma-enhanced chemical vapour deposition

Abstract: If graphene is ever going to live up to the promises of future nanoelectronic devices, an easy and cheap route for mass production is an essential requirement. A way to extend the capabilities of plasma-enhanced chemical vapour deposition to the synthesis of freestanding few-layer graphene is presented. Micrometre-wide flakes consisting of four to six atomic layers of stacked graphene sheets have been synthesized by controlled recombination of carbon radicals in a microwave plasma. A simple and highly reproducible technique is essential, since the resulting flakes can be synthesized without the need for a catalyst on the surface of any substrate that withstands elevated temperatures up to 700 °C. A thorough structural analysis of the flakes is performed with electron microscopy, x-ray diffraction, Raman spectroscopy and scanning tunnelling microscopy. The resulting graphene flakes are aligned vertically to the substrate surface and grow according to a three-step process, as revealed by the combined analysis of electron microscopy and x-ray photoelectron spectroscopy.

Silicon surface passivation by atomic layer deposited Al2O3

Abstract: Thin Al2O3 films with a thickness of 7–30 nm synthesized by plasma-assisted atomic layer deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different doping concentrations. The level of surface passivation in this study was determined by techniques based on photoconductance, photoluminescence, and infrared emission. Effective surface recombination velocities of 2 and 6 cm/s were obtained on 1.9 Ω cm n-type and 2.0 Ω cm p-type c-Si, respectively. An effective surface recombination velocity below 1 cm/s was unambiguously obtained for nearly intrinsic c-Si passivated by Al2O3. A high density of negative fixed charges was detected in the Al2O3 films and its impact on the level of surface passivation was demonstrated experimentally. The negative fixed charge density results in a flat injection level dependence of the effective lifetime on p-type c-Si and explains the excellent passivation of highly B-doped c-Si by Al2O3. Furthermore, a brief comparison is presented between the ...

Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

Abstract: We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of approximately 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4 x 10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide.

Heteroepitaxy of Corundum-Structured α-Ga2O3 Thin Films on α-Al2O3 Substrates by Ultrasonic Mist Chemical Vapor Deposition

Abstract: Ga2O3 thin films of the α-phase, that is, the corundum structure (in the trigonal system), have been epitaxially obtained on sapphire (α-Al2O3) substrates, in contrast to the strong tendency of Ga2O3 to assume a heterogeneous crystal structure, that is, the β-gallia structure (in the monoclinic system) on sapphire. This result is advantageous for high-quality films and is due to the growth by mist chemical vapor deposition (CVD) at low temperatures of 430–470 °C. The α-Ga2O3 films have narrow full-widths at half maximum (FWHMs) in their X-ray diffraction rocking curves, for example, about 60 arcsec. The root mean square (RMS) roughness of the surface was as small as 1 nm. The optical band gap energy obtained was 5.3 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The epitaxial growth of α-Ga2O3 films on sapphire is beneficial for the fabrication of oxide optical and electronic devices.

Photonic metamaterials by direct laser writing and silver chemical vapor deposition

Abstract: We fabricate planar magnetic photonic metamaterials via direct laser writing and silver chemical vapor deposition, an approach, which is also suitable for three-dimensional structures. Retrieval of the effective metamaterial parameters reveals the importance of bi-anisotropy.

Initiated and Oxidative Chemical Vapor Deposition of Polymeric Thin Films: iCVD and oCVD

Abstract: The techniques of initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD) enable the fabrication of chemically well-defined thin polymeric films on complex objects with micro- and nano-scale features. By depositing polymers from the vapor phase, many wetting and solution effects are avoided, and conformal films can be created. In iCVD, a variant of hot filament CVD, the deposition rate is enhanced and chemical functionalities of the polymers' constituents are maintained by including a thermally labile initiator in the feed stream. Due to the low energy required when using an initiator, delicate substrates can be coated. In oCVD, infusible, electrically conductive films are formed directly on the substrate of interest as the oxidant and monomer are introduced into the reactor simultaneously. This Feature Article provides an overview of the work that has been done to develop iCVD and oCVD into platform technologies. Relevant background, fundamentals, and applications will be discussed.

Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

Abstract: We present a facile route which combines the functionalization of a highly oriented pyrolytic graphite surface with an atomic layer deposition (ALD) process to allow for conformal Al2O3 layers. While the trimethylaluminum (TMA)∕H2O process caused selective deposition only along step edges, the TMA∕O3 process began to provide nucleation sites on the basal planes of the surface. O3 pretreatment, immediately followed by the ALD process with TMA∕O3 chemistry, formed Al2O3 layers without any preferential deposition at the step edges. This is attributed to functionalization of graphene by ozone treatment, imparting a hydrophilic character which is desirable for ALD deposition.

Synthesis of vanadium dioxide thin films and nanoparticles

Abstract: Thin-film materials with 'smart' properties that react to temperature variations, electric or magnetic fields, and/or pressure variations have recently attracted a great deal of attention. Vanadium dioxide (VO2) belongs to this family of 'smart materials' because it exhibits a semiconductor-to-metal first-order phase transition near 340 K, accompanied by an abrupt change in its resistivity and near-infrared transmission. It is also of great interest in condensed-matter physics because it is a classic strongly correlated electron system. In order to integrate vanadium dioxide into microelectronic circuits, thin-film growth of VO2 has been studied extensively, and studies of VO2 nanoparticles have shown that the phase transition is size-dependent. This paper presents a broad overview of the growth techniques that have been used to produce thin films and nanoparticles of VO2, including chemical vapor deposition, sol–gel synthesis, sputter deposition and pulsed laser deposition. Representative deposition techniques are described, and typical thin-film characteristics are presented, with an emphasis on recent results obtained using pulsed laser deposition. The opportunities for growing epitaxial films of VO2, and for doping VO2 films to alter their transition temperature and switching characteristics, are also discussed.

Field emission from vertically aligned few-layer graphene

Abstract: The electric field emission behavior of vertically aligned few-layer graphene was studied in a parallel plate–type setup. Few-layer graphene was synthesized in the absence of any metallic catalyst by microwave plasma enhanced chemical vapor deposition with gas mixtures of methane and hydrogen. The deposit consists of nanostructures that are several micrometers wide, highly crystalline stacks of four to six atomic layers of graphene, aligned vertically to the substrate surface in a high density network. The few-layer graphene is found to be a good field emitter, characterized by turn-on fields as low as 1 V/μm and field amplification factors up to several thousands. We observe a clear dependence of the few-layer graphene field emission behavior on the synthesis parameters: Hydrogen is identified as an efficient etchant to improve field emission, and samples grown on titanium show lower turn-on field values and higher amplification factors when compared to samples grown on silicon.

Large-scale synthesis of nitrogen-rich carbon nitride microfibers by using graphitic carbon nitride as precursor

Abstract: One-dimensional structures of nitrogen-rich carbon nitride are synthesized via a thermal evaporation process. The C-N atomic rings (s-triazine and/or tri-s-triazine) present in the precursor remain stable during the thermal evaporation and vapor transfer. They act as basic building blocks during the microstructure assembly; thus ensuring a high nitrogen content in the final product.

Spontaneous Growth of Superstructure α-Fe2O3 Nanowire and Nanobelt Arrays in Reactive Oxygen Plasma

Abstract: One-dimensional a-Fe2O3 is a promising nanomaterial for advanced applications in catalysis and water splitting, environmental protection, sensors, dye solar cells, magnetic storage media, bioprocessing, and controlled drug delivery and detection, especially as carriers of antigens for prion detection and PCR manipulation. a-Fe2O3 nanowires have been successfully synthesized by various methods based on templates, hydrothermal conditions, sol–gel-mediated reactions, solvothermal conditions, gas decomposition, direct thermal oxidation (in a gas atmosphere of CO2, SO2, O2, and NO2), [7] chemical vapor deposition (CVD), and plasmaenhanced chemical vapor deposition (PECVD). The methods based on direct thermal oxidation, gas decomposition, and CVD reported to date require long synthesis times and high temperatures and therefore limit the efficiency of oxide nanowire synthesis. The application and commercialization of nanowires or nanobelts requires simple synthetic methods that can be scaled for both large areas and large quantities. Recently, we discovered a new universal method for the synthesis of transition metal oxide nanowires and nanobelts by direct plasma oxidation of bulk materials. It has been successfully applied for the rapid synthesis of high-density niobium oxide nanowires. In this process, there is no

Plasma enhanced cyclic chemical vapor deposition of silicon-containing films

Abstract: The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si-H 3 , preferably of the formula (RR 1 N)SiH 3 wherein R and R 1 are selected independently from C 2 to C 10 , and a nitrogen or oxygen source, preferably ammonia or oxygen, which has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.

Preferential growth of ZnO thin films by the atomic layer deposition technique

Abstract: Preferred orientation of ZnO thin films deposited by the atomic layer deposition (ALD) technique could be manipulated by deposition temperature. In this work, diethyl zinc (DEZn) and deionized water (H2O) were used as a zinc source and oxygen source, respectively. The results demonstrated that (10.0) dominant ZnO thin films were grown in the temperature range of 155?220??C. The c-axis crystal growth of these films was greatly suppressed. Adhesion of anions (such as fragments of an ethyl group) on the (00.2) polar surface of the ZnO thin film was believed to be responsible for this suppression. In contrast, (00.2) dominant ZnO thin films were obtained between 220 and 300??C. The preferred orientations of (10.0) and (00.2) of the ZnO thin films were examined by XRD texture analysis. The texture analysis results agreed well with the alignments of ZnO nanowires (NWs) which were grown from these ZnO thin films. In this case, the nanosized crystals of ZnO thin films acted as seeds for the growth of ZnO nanowires (NWs) by chemical vapor deposition (CVD) process. The highly (00.2) textured ZnO thin films deposited at high temperatures, such as 280??C, contained polycrystals with the c?axis perpendicular to the substrate surface and provided a good template for the growth of vertically aligned ZnO NWs.

Revealing the secret of water-assisted carbon nanotube synthesis by microscopic observation of the interaction of water on the catalysts.

Abstract: We elucidated the secret of water-assisted chemical vapor deposition (CVD) by elucidating the influence of water on the catalysts, through ex situ microscopic and spectroscopic analysis. We unambiguously showed that catalyst deactivation readily occurs due to carbon coating and that water acted to remove this coating and revive catalysts activity. This represents the central point of water-assisted CVD.

Hiking down the Energy Landscape: Progress Toward the Kauzmann Temperature via Vapor Deposition

Abstract: Physical vapor deposition was employed to prepare amorphous samples of indomethacin and 1,3,5-(tris)naphthylbenzene. By depositing onto substrates held somewhat below the glass transition temperature and varying the deposition rate from 15 to 0.2 nm/s, glasses with low enthalpies and exceptional kinetic stability were prepared. Glasses with fictive temperatures that are as much as 40 K lower than those prepared by cooling the liquid can be made by vapor deposition. As compared to an ordinary glass, the most stable vapor-deposited samples moved about 40% toward the bottom of the potential energy landscape for amorphous materials. These results support the hypothesis that enhanced surface mobility allows stable glass formation by vapor deposition. A comparison of the enthalpy content of vapor-deposited glasses with aged glasses was used to evaluate the difference between bulk and surface dynamics for indomethacin; the dynamics in the top few nanometers of the glass are about 7 orders of magnitude faster tha...

The chemical vapor deposition of nickel phosphide or selenide thin films from a single precursor

Abstract: Nickel phosphide, nickel selenide thin films and their heterostructure (Ni0.85Se/Ni2P) were deposited from a newly synthesized single source precursor {Ni[iPr2P(S)NP(Se)iPr2]2} just by altering the deposition temperature using CVD.

Method of depositing silicon oxide films

Abstract: Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.

Anisotropic oxygen diffusion properties in epitaxial thin films of La2NiO4+δ

Abstract: We report on the development and validation of a new methodology for the determination of anisotropic tracer diffusion and surface exchange coefficients of high quality epitaxial thin films in the two perpendicular directions (transverse and longitudinal), by the isotopic exchange technique. Measurements were performed on c-axis oriented La2NiO4+δ films grown on SrTiO3 (100) and NdGaO3 (110) by pulsed injection metal organic chemical vapour deposition (PIMOCVD), with different thicknesses ranging from 33 to 370 nm. The effect that the strain induced by the film–substrate mismatch has on the oxygen diffusion through the film was evaluated. Both tracer diffusion coefficients, along the c-axis and along the ab plane, were found to increase with film thickness, i.e., as the stress of the film decreases, while the thickness seems to have no effect on the tracer surface exchange coefficient. Best fits were obtained when considering the thickest films composed by two regions with different c-axis tracer diffusion coefficient values, a higher and constant D* close to the film surface and a variable decreasing D* closer to the substrate. As expected, the tracer diffusion and surface exchange coefficients are thermally activated and are approximately two orders of magnitude higher along the ab plane than along the c-axis. The low activation energies of D* compared with bulk values for both directions at low temperatures seem to confirm the contribution of a vacancy mechanism to the ionic conduction.

Low wet etch rate silicon nitride film

Abstract: The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.

Fabrication of silicon nitride waveguides for visible-light using PECVD: a study of the effect of plasma frequency on optical properties.

Abstract: This paper presents work aimed at optimizing the fabrication of silicon nitride Si(x)N(y) thin-film visible-light planar waveguides using plasma-enhanced chemical vapour deposition (PECVD). The effects of plasma frequency, precursor gas ratio, and thermal annealing in relation to waveguide optical properties (refractive index, propagation losses) are studied. Experimental results over a wide range of precursor gas ratios show convincingly that waveguides fabricated using low-frequency PECVD have lower propagation losses in the visible range compared to waveguides of equal refractive index fabricated with high-frequency PECVD.

In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition

Abstract: An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.

Chemical vapor deposition reactor

Abstract: A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition.