Topic
Chemical vapor deposition
About: Chemical vapor deposition is a research topic. Over the lifetime, 69785 publications have been published within this topic receiving 1337899 citations. The topic is also known as: CVD & chemical vapour deposition.
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TL;DR: In this article, thin (80-200 A) silicon dioxide (SiO2) films have been deposited by low pressure rapid thermal chemical vapor deposition (RTCVD), using silane (SiH4) and nitrous oxide (N2O) as the reactive gases for the first time.
Abstract: Thin (80–200 A) silicon dioxide (SiO2) films have been deposited by low pressure rapid thermal chemical vapor deposition (RTCVD), using silane (SiH4) and nitrous oxide (N2O) as the reactive gases for the first time. A deposition rate of 55 A/min has been achieved at 800 °C with a SiH4/N2O flow rate ratio of 2%. Auger electron spectroscopy (AES) and Rutherford back scattering spectroscopy (RBS) have shown a uniform and stoichiometric composition throughout the deposited oxide films. Electrical characterization of the films have shown an average catastrophic breakdown field of 13 MV/cm and a midgap interface trap density (Dit) of equal to or less than 5×1010 eV−1 cm−2. The results suggest that the deposited RTCVD SiO2 films using SiH4‐N2O gas system may have the potential to be used as the gate dielectric in future low‐temperature metal oxide semiconductor (MOS) device processes for ultralarge scale integration (ULSI).
34 citations
TL;DR: In this article, the formation of single cation films using tetramethylheptanedionate precursors was shown to be mass controlled, exhibiting a ratio of deposited to evaporated species in the increasing order Ba, Y, and Cu.
Abstract: Thin‐film growth and compositional effects of c‐axis oriented YBa2Cu3O7−x (YBCO) thin films synthesized by metalorganic chemical vapor deposition have been investigated. The formation of single cation films using tetramethylheptanedionate precursors was shown to be mass controlled, exhibiting a ratio of deposited to evaporated species in the increasing order Ba, Y, and Cu. The physical properties of off‐stoichiometric YBCO films deposited on MgO substrates were measured in the compositional range 1.1≤Ba/Y≤2.3 and 1.5≤Cu/Ba≤4.6. While structural properties such as c‐axis values and rocking curves appeared unaffected to variations in cation stoichiometry, morphology was observed to be extremely sensitive even to slight changes in composition. Off‐stoichiometric layers with Cu/Ba≳1.5 were observed to exhibit Cu‐rich precipitates embedded in a 1:2:3 YBCO film matrix. The zero‐resistivity temperatures were above 77 K for all cation film compositions measured. However, sharp ac‐susceptibility transitions were r...
34 citations
TL;DR: In this article, a β-SiC thin film with a high preferred orientation of (111) planes was successfully deposited on Si(100) substrates at a relatively low temperature of 1050 °C from the mixture of methyltrichlorosilane (CH3SiCl3 or MTS) and H2 in a hot wall LPCVD reactor.
Abstract: Stoichiometric β–SiC thin films with a high preferred orientation of (111) planes were successfully deposited on Si(100) substrates at a relatively low temperature of 1050 °C from the mixture of methyltrichlorosilane (CH3SiCl3 or MTS) and H2 in a hot wall LPCVD reactor. No etching of the Si substrate and smooth topography of the deposit were observed at high H2/MTS ratios and/or low deposition pressures. The presences of excess silicon, excess carbon, or incorporated hydrogen atoms in the films were not detected. Poor topography, degradation in preferred orientation, and etching of the Si substrate were observed at high values of deposition pressure, MTS concentration, and temperature. The etching on the Si substrate was due to the out-diffusion of Si atoms from the substrate and the presence of Cl-containing radicals resulting from the decomposition of MTS molecules while transporting to the Si substrates. A deposition mechanism was proposed to model the deposition of SiC in a hot wall reactor by using (1) gas phase decomposition of MTS molecules, (2) adsorption of the intermediates on the surface, and (3) reaction of the adsorbed intermediates to form SiC. The deposition rates were predicted very well for various deposition conditions in a hot wall LPCVD reactor.
34 citations
TL;DR: In this paper, a number of experiments and numerical simulations have been conducted to determine critical parameters for growth of polycrystalline silicon via hot-wire chemical vapor deposition using Direct Simulation Monte Carlo (DSMC) method.
34 citations
TL;DR: In this paper, the authors used infrared absorption spectroscopy and reflection high-energy electron diffraction (RHEED) to characterize the C-BN thin film on diamond using the plasma chemical vapor deposition (CVD) technique.
Abstract: Cubic boron nitride (c-BN) thin films could be deposited on diamond using the plasma chemical vapor deposition (CVD) technique at low pressure. The deposited films are characterized by infrared absorption spectroscopy and reflection high-energy electron diffraction (RHEED). The c-BN phase on diamond can be synthesized at the appropriate self-bias and microwave power. In contrast to the Si substrate, the peeling of the c-BN phase from the diamond substrate has not been observed for six months. The RHEED pattern of c-BN film on diamond shows that the c-BN film consists of microcrystals.
34 citations