Topic
Chemical vapor deposition
About: Chemical vapor deposition is a research topic. Over the lifetime, 69785 publications have been published within this topic receiving 1337899 citations. The topic is also known as: CVD & chemical vapour deposition.
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TL;DR: In this paper, the structural, electronic and chemisorptive properties of ultrathin metal films on clean and well-defined oxide surfaces have been characterized using a variety of surface science techniques.
1,435 citations
TL;DR: In this paper, the authors provide a detailed and up-to-date description of the literature on the subject as well as highlighting challenges that must be overcome for the utilization of graphene deposited on copper substrates by chemical vapour deposition.
Abstract: The discovery of uniform deposition of high-quality single layered graphene on copper has generated significant interest. That interest has been translated into rapid progress in terms of large area deposition of thin films via transfer onto plastic and glass substrates. The opto-electronic properties of the graphene thin films reveal that they are of very high quality with transmittance and conductance values of >90% and 30Ω/sq, both are comparable to the current state-of-the-art indium tin oxide transparent conductor. In this Feature Article, we provide a detailed and up to date description of the literature on the subject as well as highlighting challenges that must be overcome for the utilization of graphene deposited on copper substrates by chemical vapour deposition.
1,405 citations
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Abstract: Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions and methods used to grow alloys for optical bandgap and lattice engineering are introduced. The review is concluded with a description of recent Group III-nitride semiconductor devices such as bright blue and white light-emitting diodes, the first blue-emitting laser, high-power transistors, and a discussion of further applications in surface acoustic wave devices and sensors.
1,386 citations
TL;DR: It is shown that grain boundaries give a significant Raman 'D' peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.
Abstract: Chemical vapour deposition is a promising route for large-scale graphene growth. It is now shown that—through the use of seeds—high-quality, large, single-crystal domains can be grown on a patterned arrangement, and can be used to carefully study the transport across grain boundaries.
1,385 citations
TL;DR: Chemical Vapour Deposition (CVD) involves the chemical reactions of gaseous reactants on or near the vicinity of a heated substrate surface as mentioned in this paper, which can provide highly pure materials with structural control at atomic or nanometer scale level.
1,379 citations