Chemical vapor deposition

About: Chemical vapor deposition is a research topic. Over the lifetime, 69785 publications have been published within this topic receiving 1337899 citations. The topic is also known as: CVD & chemical vapour deposition.

Thin Film Processes

Abstract: J.L. Vossen and W. Kern, Introduction. S.M. Rossnagel, Glow Discharge Plasma and Sources for Etching and Deposition. C.V. Deshpandey and R.F. Bunshah, Evaporation Processes. P.P. Chow, Molecular Beam Epitaxy. R. Parsons, Sputter Deposition Processes. P.C. Johnson, The Cathodic Arc Plasma Deposition of Thin Films. K.F. Jensen and W. Kern, Thermal Chemical Vapor Deposition. K.F. Jensen and T. Kuech, Metal-Organic Chemical Vapor Deposition. J.G. Eden, Photochemical Vapor Deposition. L.C. Klein, Sol-Gel Coatings. R. Reif and W. Kern, Plasma-Enhanced Chemical Vapor Deposition. G. Lucovsky, D.V. Tsu, R.A. Rudder, and R.J. Markunas, Formation of Inorganic Films by Remote Plasma-Enhanced Chemical-Vapor Deposition. T.M. Mayer and S.D. Allen, Selected Area Processing. H.W. Lehman, Plasma-Assisted Etching. P.R. Puckett, S.L. Michel, and W.E. Hughes, Ion Beam Etching. C.I.H. Ashby, Laser-Driven Etching.

The preparation and properties of vapor- deposited single-crystalline GaN

Abstract: Vapor deposited GaN single crystals tested for electrical and optical properties, determining band gap energy, electron concentration, etc

Oxidation resistance of graphene-coated Cu and Cu/Ni alloy

Abstract: The ability to protect refined metals from reactive environments is vital to many industrial and academic applications. Current solutions, however, typically introduce several negative effects, including increased thickness and changes in the metal physical properties. In this paper, we demonstrate for the first time the ability of graphene films grown by chemical vapor deposition to protect the surface of the metallic growth substrates of Cu and Cu/Ni alloy from air oxidation. In particular, graphene prevents the formation of any oxide on the protected metal surfaces, thus allowing pure metal surfaces only one atom away from reactive environments. SEM, Raman spectroscopy, and XPS studies show that the metal surface is well protected from oxidation even after heating at 200 °C in air for up to 4 h. Our work further shows that graphene provides effective resistance against hydrogen peroxide. This protection method offers significant advantages and can be used on any metal that catalyzes graphene growth.

Low-temperature growth of well-aligned zno nanorods by chemical vapor deposition

Abstract: PPV, F8BT shows considerable anisotropy, with a birefringence of 0.19 at 633 nm. As with OC1C10±PPV there is a slight blue shift in the absorption peaks for the extraordinary direction with respect to the ordinary direction, again indicating a decreased conjugation length for chains lying out of the plane of the film. In conclusion, we have shown that a combination of reflection and transmission ellipsometry can be reliably employed to determine the ordinary and extraordinary optical constants in conjugated polymer films in both the absorbing and transparent regions. We have presented optical constants for two commonly used electroluminescent polymers, which will be useful in optical modeling of LEDs and photovoltaic devices. The technique provides structural information about the degree of chain alignment, and will in the future be applied to study the effects of annealing on optical properties, and to investigate possible variation of anisotropy with film thickness in thinner films than were studied here.

Single-crystal gallium nitride nanotubes.

Abstract: Since the discovery of carbon nanotubes in 1991 (ref. 1), there have been significant research efforts to synthesize nanometre-scale tubular forms of various solids. The formation of tubular nanostructure generally requires a layered or anisotropic crystal structure. There are reports of nanotubes made from silica, alumina, silicon and metals that do not have a layered crystal structure; they are synthesized by using carbon nanotubes and porous membranes as templates, or by thin-film rolling. These nanotubes, however, are either amorphous, polycrystalline or exist only in ultrahigh vacuum. The growth of single-crystal semiconductor hollow nanotubes would be advantageous in potential nanoscale electronics, optoelectronics and biochemical-sensing applications. Here we report an 'epitaxial casting' approach for the synthesis of single-crystal GaN nanotubes with inner diameters of 30-200 nm and wall thicknesses of 5-50 nm. Hexagonal ZnO nanowires were used as templates for the epitaxial overgrowth of thin GaN layers in a chemical vapour deposition system. The ZnO nanowire templates were subsequently removed by thermal reduction and evaporation, resulting in ordered arrays of GaN nanotubes on the substrates. This templating process should be applicable to many other semiconductor systems.