Topic
CMOS
About: CMOS is a research topic. Over the lifetime, 81371 publications have been published within this topic receiving 1189078 citations. The topic is also known as: complementary metal–oxide–semiconductor & complementary-symmetry metal–oxide–semiconductor.
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TL;DR: A new type of transistor in which there are no junctions and no doping concentration gradients is proposed and demonstrated, which has near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
Abstract: All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
2,090 citations
TL;DR: In this paper, an alpha-power-law MOS model that includes the carrier velocity saturation effect, which becomes prominent in short-channel MOSFETs, is introduced and closed-form expressions for the delay, short-circuit power, and transition voltage of CMOS inverters are derived.
Abstract: An alpha -power-law MOS model that includes the carrier velocity saturation effect, which becomes prominent in short-channel MOSFETs, is introduced. The model is an extension of Shockley's square-law MOS model in the saturation region. Since the model is simple, it can be used to handle MOSFET circuits analytically and can predict the circuit behavior in the submicrometer region. Using the model, closed-form expressions for the delay, short-circuit power, and transition voltage of CMOS inverters are derived. The delay expression includes input waveform slope effects and parasitic drain/source resistance effects and can be used in simulation and/or optimization CAD tools. It is found that the CMOS inverter delay becomes less sensitive to the input waveform slope and that short-circuit dissipation increases as the carrier velocity saturation effect in short-channel MOSFETs gets more severe. >
1,596 citations
23 Jun 2002
TL;DR: An end-to-end model is described and validated that enables us to compute the soft error rates (SER) for existing and future microprocessor-style designs and predicts that the SER per chip of logic circuits will increase nine orders of magnitude from 1992 to 2011 and at that point will be comparable to the SERper chip of unprotected memory elements.
Abstract: This paper examines the effect of technology scaling and microarchitectural trends on the rate of soft errors in CMOS memory and logic circuits. We describe and validate an end-to-end model that enables us to compute the soft error rates (SER) for existing and future microprocessor-style designs. The model captures the effects of two important masking phenomena, electrical masking and latching-window masking, which inhibit soft errors in combinational logic. We quantify the SER due to high-energy neutrons in SRAM cells, latches, and logic circuits for feature sizes from 600 nm to 50 nm and clock periods from 16 to 6 fan-out-of-4 inverter delays. Our model predicts that the SER per chip of logic circuits will increase nine orders of magnitude from 1992 to 2011 and at that point will be comparable to the SER per chip of unprotected memory elements. Our result emphasizes that computer system designers must address the risks of soft errors in logic circuits for future designs.
1,506 citations
TL;DR: In this article, a 1.5 GHz low noise amplifier (LNA) intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6/spl mu/m CMOS process.
Abstract: A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6-/spl mu/m CMOS process. The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply. In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices.
1,463 citations
TL;DR: In this article, the electron transport properties of group III-V compound semiconductors have been used for the development of the first nanometre-scale logic transistors, which is the first step towards the first IC transistors.
Abstract: For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal-oxide-semiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III-V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors.
1,446 citations