CMOS

About: CMOS is a research topic. Over the lifetime, 81371 publications have been published within this topic receiving 1189078 citations. The topic is also known as: complementary metal–oxide–semiconductor & complementary-symmetry metal–oxide–semiconductor.

Low-cost and nanoscale non-volatile memory concept for future silicon chips.

Abstract: Non-volatile 'flash' memories are key components of integrated circuits because they retain their data when power is interrupted. Despite their great commercial success, the semiconductor industry is searching for alternative non-volatile memories with improved performance and better opportunities for scaling down the size of memory cells. Here we demonstrate the feasibility of a new semiconductor memory concept. The individual memory cell is based on a narrow line of phase-change material. By sending low-power current pulses through the line, the phase-change material can be programmed reversibly between two distinguishable resistive states on a timescale of nanoseconds. Reducing the dimensions of the phase-change line to the nanometre scale improves the performance in terms of speed and power consumption. These advantages are achieved by the use of a doped-SbTe phase-change material. The simplicity of the concept promises that integration into a logic complementary metal oxide semiconductor (CMOS) process flow might be possible with only a few additional lithographic steps.

CMOS image sensors: electronic camera-on-a-chip

Abstract: CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

Upset hardened memory design for submicron CMOS technology

Abstract: A novel design technique is proposed for storage elements which are insensitive to radiation-induced single-event upsets. This technique is suitable for implementation in high density ASICs and static RAMs using submicron CMOS technology.

Measuring the Gap Between FPGAs and ASICs

Abstract: This paper presents experimental measurements of the differences between a 90-nm CMOS field programmable gate array (FPGA) and 90-nm CMOS standard-cell application-specific integrated circuits (ASICs) in terms of logic density, circuit speed, and power consumption for core logic. We are motivated to make these measurements to enable system designers to make better informed choices between these two media and to give insight to FPGA makers on the deficiencies to attack and, thereby, improve FPGAs. We describe the methodology by which the measurements were obtained and show that, for circuits containing only look-up table-based logic and flip-flops, the ratio of silicon area required to implement them in FPGAs and ASICs is on average 35. Modern FPGAs also contain "hard" blocks such as multiplier/accumulators and block memories. We find that these blocks reduce this average area gap significantly to as little as 18 for our benchmarks, and we estimate that extensive use of these hard blocks could potentially lower the gap to below five. The ratio of critical-path delay, from FPGA to ASIC, is roughly three to four with less influence from block memory and hard multipliers. The dynamic power consumption ratio is approximately 14 times and, with hard blocks, this gap generally becomes smaller

Design Of Analog Cmos Integrated Circuits

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