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Coherent potential approximation
About: Coherent potential approximation is a research topic. Over the lifetime, 1930 publications have been published within this topic receiving 36805 citations.
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TL;DR: In this article, the electronic density of states of tetrahedrally-bonded amorphous semiconductors was studied and the Weaire-Thorpe model was applied to the random variations of the banding parameter V 1 and the bonding parameter V 2.
Abstract: On the basis of a simple method by which quantitative disorder as well as topological disorder in amorphous solids can be treated systematically, we study the electronic density of states of tetrahedrally-bonded amorphous semiconductors such as amorphous silicon or germanium. We adopt the Weaire-Thorpe model and apply the coherent potential approximation to the random variations of the banding parameter V 1 and the bonding parameter V 2 of this model. It is possible to explain the disappearance of the dip between the two lower peaks of the valence band by introducing fluctuations in V 1 alone. This fact indicates that it is not always necessary to assume the existence of five-membered rings as a cause for the disappearance of the dip. We also discuss the effects of fluctuations in V 2 , missing atoms and broken bonds.
5 citations
TL;DR: In this article, the locator-interact formalism is employed to analyze short-range order effects in the electronic density of states of a binary alloy in the framework of a single-site self-consistent theory.
Abstract: Short-range order effects in the electronic density of states of a binary alloy are analysed in the framework of a single-site self-consistent theory; the locator-interactor formalism is employed. Two equivalent approaches are presented: one is a special diagrammatic technique and the other is an effective-medium treatment. The method is exact for extreme attractive or repulsive correlation between the two alloy components, while it reduces to the conventional CPA for a random alloy. The present development gives simple expressions for the Green function of the alloy, and the evaluation of local and total densities of electronic states involves little numerical work.
5 citations
TL;DR: In this paper, it was shown that the quantum transport theory in the coherentpotential approximation is consistent with the Ward identity and a similar identity and that this consistency is essential to obtaining the correct result in that reduction.
Abstract: For pt.II see ibid., vol.10, p.2131 (1977). It is shown that, when a random substitutional alloy has a small carrier density, a large cancellation occurs between two terms of its electrical conductivity in the quantum transport theory. This cancellation must be treated carefully when the reduction of some quantum transport theory to the Boltzmann transport theory is made in the weak-scattering or the dilute limit. It is shown that the quantum transport theory in the coherent-potential approximation is consistent with the Ward identity and a similar identity and that this consistency is essential to obtaining the correct result in that reduction.
5 citations
TL;DR: In this paper, the electronic structure, site preference energies and magnetism in B2 Ni50(Al37.5Ni12.5) alloys doped with 3d-transition metals using a Coherent Potential Approximation for treating effects of substitutional disorder.
5 citations
TL;DR: In this paper, both the electronic and magnetic properties of Ga 1-x>>\s have been studied using the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).
Abstract: The both electronic and magnetic properties of Ga 1-x
Mn x
As, Ga 1-x
Mn x
N, and Ga 1-x
Cr x
N have been studied using the Korringa–Kohn–Rostoker (KKR) method combined with the coherent potential approximation (CPA). The total and local density of state (DOS) of Ga 1-x
M
x
A (M = Mn and Cr; A = As and N) material are established. The total magnetic moment and the gap energies deduced for different values of dilution x in third systems are obtained.
5 citations