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Coherent potential approximation

About: Coherent potential approximation is a research topic. Over the lifetime, 1930 publications have been published within this topic receiving 36805 citations.


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Journal ArticleDOI
TL;DR: In this paper , a generalized auxiliary coherent medium theory is proposed to deal with the large fluctuation in Anderson-type off-diagonal disorder in disordered materials, which is used for mean-field simulations in the embedding framework.
Abstract: We report a generalized auxiliary coherent medium theory to settle the longstanding challenge of Anderson-type off-diagonal disorder (AODD) for simulating disordered alloys. The AODD is transformed into a diagonal-like disorder with a weighted discrete distribution in an auxiliary medium. This approach is demonstrated for simulating the phonon spectral in NiFe and NiPt alloys, and it is found that accounting for AODD substantially enhances the phonon linewidth to agree well with the supercell and experimental results, compared to results with averaged-value ODD. This paper provides an effective approach to treat the large fluctuation in ODD in disordered materials, presenting an important progress for mean-field simulations in the embedding framework.

1 citations

Journal ArticleDOI
TL;DR: In this paper, a non-local dynamic coherent-potential approximation for the one-exciton Green's function with the Hamiltonian was proposed, where a spectrum of optical phonons is assumed, and the exciton-phonon interaction operator is linear or quadratic in the phonon operators.
Abstract: A nonlocal dynamic coherent-potential approximation is formulated as a further development of the dynamic coherent-potential method. The nonlocal dynamic coherent-potential approximation is an efficient method of determining the one-exciton Green’s function in a model with the Hamiltonian in the strong-coupling approximation, where a spectrum of optical phonons is assumed, and the exciton-phonon interaction operator is linear or quadratic in the phonon operators. A system of recursion equations is derived, from which the coherent potential is found as a function of the energy E and the wave vector k. An analytical expression is derived for the one-exciton Green’s function in the case of narrow (in comparison with the phonon energy) exciton bands and exciton-phonon interaction linear in the phonon operators. For broader exciton bands and more complex exciton-phonon interaction the system of equations determining the coherent potential represents a recursion algorithm, which can be effectively implemented by numerical means.

1 citations

Journal ArticleDOI
TL;DR: The theory of disorder in superconducting alloys was discussed in this article, where the authors use standard Wannier function representation and allow for diagonal and ofi-diagonal disorder.
Abstract: The general theory of disorder in superconducting alloys was discussed We use standard Wannier function representation and allow for diagonal and ofi-diagonal disorder We generalized the coherent potential approximation in the version able to deal with ofi-diagonal disorder in normal systems to treat superconducting state As an illustration we calculate the quasiparticle density of states and gap function of a d-wave superconductor We show inter alia that the rate at which superconductivity disappears depends on the kind of disorder and for ofi-diagonal disorder it depends on the details of its realization

1 citations

Journal ArticleDOI
TL;DR: In this article, an angular momentum representation of the Green function with Slater's δ-function-type potential is used to calculate the spectral density of electronic states of the disordered alloy, α-brass.
Abstract: We have given a brief review of the existing approaches towards the study of the electronic structure of disordered binary alloys and have discussed Soven's single-site coherent potential approximation. An angular momentum representation of the Green function with Slater's δ-function-type potential is used to calculate the spectral density of electronic states of the disordered alloy, α-brass. We have compared the results of our calculation with available optical and photoemission data.

1 citations

Proceedings ArticleDOI
01 Dec 2014
TL;DR: In this article, a parameter-free first principle modeling methodology with emphasis on simulating effects of atomistic disorder in nano-scale transistors is reported. But this technique is based on the developed theory of nonequilibrium coherent potential approximation and a linear scaling sparse Hamiltonian implementation and it does not consider the effects of disorder scattering to the quantum transport properties of a boron-nitrogen co-doped graphene tunnel field effect transistor (TFET).
Abstract: A parameter-free first principle modeling methodology is reported with emphasis on simulating effects of atomistic disorder in nano-scale transistors. The technique is based on the developed theory of nonequilibrium coherent potential approximation and a linear scaling sparse Hamiltonian implementation. Using this technique, effects of disorder scattering to the quantum transport properties of a boron-nitrogen (B-N) co-doped graphene tunnel field effect transistor (TFET) is investigated.

1 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20234
202222
202127
202030
201930
201840