Showing papers on "Colossal magnetoresistance published in 1973"
TL;DR: In this article, a quadratic negative magnetoresistance was derived for a model in which the carrier mobility is limited by spin disorder, and the method was then modified to show how a linear magnetoregressive may arise.
Abstract: A quadratic negative magnetoresistance is derived for a model in which the carrier mobility is limited by spin disorder. The method is then modified to show how a linear magnetoresistance may arise.
20 citations
TL;DR: In this paper, the influence of annealing treatments on the electrical properties of Ga-doped and undoped sulpho-spinels has been discussed and results are given.
17 citations
TL;DR: Using the Boltzmann transport equation, expressions for the magnetoresistance and Hall coefficient in thin metallic films have been derived in this article for low magnetic flux density (∼10 4 gauss) and is a special case of more general work by Sondheimer.
14 citations
TL;DR: In this article, two types of dependences of the magnetoresistance on the magnetic field and the temperature have been found, and the differences between these two types are attributed to the influence of deep impurity levels on the electrical conductivity in amorphous Ge.
Abstract: The magnetoresistance ot sputtered films of a-germanium has been measured in the temperature region 78–450 K in magnetic fields up to 25 kG. Two types of dependences of the magnetoresistance on the magnetic field and the temperature have been found. Differences between these two types are ascribed to the influence of deep impurity levels on the electrical conductivity in amorphous Ge.
11 citations
TL;DR: In this paper, the magnetoresistance of sputtered films of a-Ge has been studied in the temperature range 78-450 K and in magnetic fields up to 7 kG. The experiments are confronted with a model based on the Zeeman splitting of localized electronic levels in the applied magnetic field.
Abstract: Magnetoresistance of sputtered films of a-Ge has been studied. The experiments were performed in the temperature range 78–450 K and in magnetic fields up to 7 kG. The magnetoresistance has been found to be negative up to 450 K and changes its sign at 80 K. The experiments are confronted with a model based on the Zeeman splitting of localized electronic levels in the applied magnetic field. It is shown that such model can lead to relatively good agreement between the theory and the experiment.
6 citations
4 citations
TL;DR: In this article, it was suggested that only far above the band edge does the magnetoresistance exhibit an oscillatory behaviour; below band edge the magnetoreduction in the high-field regime is considered, and near the band-edge the slope of the magnetorsistance in a weak magnetic field is discussed.
Abstract: It is suggested that only far above the band edge does the magnetoresistance exhibit an oscillatory behaviour; below the band edge the magnetoresistance in the high-field regime is considered, and near the band edge the slope of the magnetoresistance in a weak magnetic field is discussed.
2 citations