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Showing papers on "Colossal magnetoresistance published in 1984"


Journal ArticleDOI
TL;DR: In this paper, anomalous magnetoresistance in amorphous CuZr at low temperature has been observed and can be precisely accounted for in theoretical models of localization for 3D metallic systems in the presence of strong spin-orbit interactions.

44 citations


Journal ArticleDOI
TL;DR: In this paper, the authors measured the transverse magnetoresistance of Fe91Zr9 and Fe90Zr10 alloys from 4 to 300 K in applied magnetic fields as large as 9 T and found that the resistance minimum which occurs around the Curie temperature for these alloys is due to the coherent exchange scattering by the Fe moments.
Abstract: A remarkable feature in amorphous Fe1−xZrx alloys is that for Fe concentrations greater than 90 at %, the ferromagnetic transition temperature TC decreases with increasing Fe concentration. In addition, alloys containing 93–90 at % Fe are found to show a spin‐glass‐like behavior at low temperatures, i.e., below TC. The electrical resistivity of these alloys shows a minimum at roughly the Curie temperature. We have measured the transverse magnetoresistance of Fe91Zr9, and Fe90Zr10 alloys from 4 to 300 K in applied magnetic fields as large as 9 T. We find that (1) the field derivative of the magnetoresistance is positive at all temperatures in applied fields larger than 0.1 T; (2) a maximum occurs in the magnetoresistance at roughly the Curie temperature; (3) below the Curie temperature a small negative low‐field magnetoresistance develops which increases with decreasing temperature. These results indicate that the resistance minimum which occurs around the Curie temperature for these alloys is due to the coherent exchange scattering by the Fe moments, and is not associated with a Kondo mechanism as previously proposed.A remarkable feature in amorphous Fe1−xZrx alloys is that for Fe concentrations greater than 90 at %, the ferromagnetic transition temperature TC decreases with increasing Fe concentration. In addition, alloys containing 93–90 at % Fe are found to show a spin‐glass‐like behavior at low temperatures, i.e., below TC. The electrical resistivity of these alloys shows a minimum at roughly the Curie temperature. We have measured the transverse magnetoresistance of Fe91Zr9, and Fe90Zr10 alloys from 4 to 300 K in applied magnetic fields as large as 9 T. We find that (1) the field derivative of the magnetoresistance is positive at all temperatures in applied fields larger than 0.1 T; (2) a maximum occurs in the magnetoresistance at roughly the Curie temperature; (3) below the Curie temperature a small negative low‐field magnetoresistance develops which increases with decreasing temperature. These results indicate that the resistance minimum which occurs around the Curie temperature for these alloys is due to the c...

12 citations


Journal ArticleDOI
TL;DR: In this paper, the magnetoresistance of metallic polyacetylene at temperatures T between 4.2 K and 0.3 K and in fields B up to 3.4 Tesla both parallel and perpendicular to the average current flow was measured.

11 citations



Journal ArticleDOI
TL;DR: In this article, the transformation of ferromagnetic Ni-Cr alloys with chromium contents between 0.5 and 7 at.% to a nonferromagnetic hydride state leads to a minimum in the electrical resistance at low temperatures and to a negative contribution of the longitudinal magnetoresistance.
Abstract: The transformation of ferromagnetic NiCr alloys with chromium contents between 0.5 and 7 at.% to a non-ferromagnetic hydride state leads to a minimum in the electrical resistance at low temperatures and to a negative contribution of the longitudinal magnetoresistance. This phenomenon can be understood, by analogy to the Kondo effect in dilute alloys, as the spin-flip scattering of conduction electrons at localized magnetic moments and its “freezing-out” by a magnetic field. Furthermore the results can be compared with those of other researchers on CuCr and non-dilute CuMn alloys.

3 citations


Journal ArticleDOI
TL;DR: In this paper, the effect of electric fields on the magnetoresistance of intermediately doped crystals (4 × 1015 ≦ ≦ ne ≦ 3 × 1016 cm−3) of n-type epitaxial gallium arsenide a t T = 4.2 K is studied.
Abstract: The effect of electric fields on the magnetoresistance of intermediately doped crystals (4 × 1015 ≦ ≦ ne ≦ 3 × 1016 cm−3) of n-type epitaxial gallium arsenide a t T = 4.2 K is studied. It is established that negative magnetoresistance is observed only in weak electric fields. Positive magnetoresistance is observed in an electric field higher than the impurity breakdown field. A transition from negative magnetoresistance to positive magnetoresistance is found to occur in an electric field less than the breakdown field. A model is suggested to explain magnetoresistance changes in electric fields, which takes into account the decrease of the negative component of magnetoresistance due to a decrease in the concentration of magnetic centres and the increase of the positive component due to the appearance of nonequilibrium carriers in the conduction band. [Russian Text Ignored].

2 citations