Topic
Colossal magnetoresistance
About: Colossal magnetoresistance is a research topic. Over the lifetime, 3658 publications have been published within this topic receiving 130104 citations.
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TL;DR: In this paper, the influence of spin-orbit interaction on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall was investigated.
Abstract: We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wavelength of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed.
30 citations
TL;DR: In this article, a series of samples were prepared by polyvinyl alcohol (PVA) gel route, and the electrical resistivity vs. temperature plot of the sample x = 0.10 is found to exhibit an insulating behavior below 36 K, while the sample, x =0.20 exhibits two peaks.
30 citations
TL;DR: In this article, the electronic, structural and magnetic phase diagram of the colossal magnetoresistive Sm 1− x Sr x MnO 3 (0.16≤ х ≤ 0.67) manganites is constructed on the basis of their systematic studies by high-resolution neutron powder diffraction.
30 citations
TL;DR: In this paper, the structural and transport properties of Sm 0.6 Sr 0.4 MnO 3 polycrystalline sample were investigated using solid-state reaction technique and X-ray diffraction (XRD) showed a single phase sample.
29 citations
TL;DR: In this article, it was shown that the magnetic interface resistivity of manganite/normal-metal heterostructures is a strong function of the magnetization, and that the magnitude of this magnetoresistive effect can be controlled by the applied voltage.
Abstract: It is well established that the resistivity of the manganites is a strong function of the magnetization. Near the ferromagnetic ordering temperature, colossal changes in the resistivity are seen in applied fields of several Tesla; such fields are too large for a number of potential applications. An alternative approach is to change the state of magnetization by injecting spin polarized carriers into manganite/classical ferromagnet heterostructures. In this work, results on manganite/normal-metal heterostructures in current perpendicular-to-plane geometry are reported. We observe a colossal magnetoresistance in fields of the order of 1 T which we attribute to magnetic interface scattering. The magnitude of this magnetoresistive effect can be controlled by the applied voltage, i.e., the heterostructures act as magnetic sensors with variable sensitivity. Implications of the interface resistance on spin injection from classical ferromagnets into manganites are discussed.
29 citations