scispace - formally typeset
Search or ask a question
Topic

Colossal magnetoresistance

About: Colossal magnetoresistance is a research topic. Over the lifetime, 3658 publications have been published within this topic receiving 130104 citations.


Papers
More filters
Patent
23 Dec 1997
TL;DR: In this paper, a magnetic field induced geometric effect in which current is expelled from the conducting inhomogeneity is demonstrated at low field in (near) zero-band-gap material, such as Hg 1-x Cd x Te(x˜0.1).
Abstract: The low-field magnetoresistance of a high carrier mobility semiconductor with inhomogeneities which are more conducting than the surrounding semiconductor material matrix is significantly enhanced compared to the magnetoresistance of the homogeneous material. The enhancement results from a magnetic field induced geometric effect in which current is expelled from the conducting inhomogeneity. The enhanced giant magnetoresistance is demonstrated at low field in (near) zero-band-gap material, such as Hg 1-x Cd x Te(x˜0.1). The effect is applied to the fabrication of magnetic read head sensors such as Corbino disc, bar magnetoresistance sensors and thin film sensors.

21 citations

Journal ArticleDOI
TL;DR: The particle size driven modification of the non-Griffiths phase to Griffiths phase in (La 0.4Y0.6)0.7Ca0.3MnO3 (LYCMO) compound has been presented in this article.

21 citations

Journal ArticleDOI
TL;DR: In this article, the properties of functional materials are quite different at the nanoscale, because at this length scale, the surface/interface energy becomes comparable to the bulk energy.
Abstract: Many properties of functional materials are quite different at the nanoscale, because at this length scale, the surface/interface energy becomes comparable to the bulk energy. Thus, the nature of various phase transitions at the nanoscale (e.g., structural, electronic, magnetic, metal-insulator) is altered. In addition, in functional materials with many coupled order parameters, quantum effects can dominate the response. We use the term nanoscale with three different context-specific connotations: it could refer to a cluster of atoms or molecules, a confined geometry as in a nanoscale grain or a superlattice, and a nanoscale region in the bulk. This field is still in its infancy, and much needs to be learned in terms of nucleation and thermodynamics at this scale. Materials of interest that we consider in this issue include, but are not limited to, ferroics (ferroelectrics, ferromagnets, ferroelastics), multiferroics (magnetoelectrics, ferrotoroidics), and complex functional materials such as those that exhibit colossal magnetoresistance and high-temperature superconductivity, including the recently discovered iron pnictide superconductors. Superconductors provide a fertile ground for quantum phase transitions.

21 citations

Journal ArticleDOI
TL;DR: Results suggest that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields, and the VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.
Abstract: Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La0.7Sr0.3MnO3. At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: the mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negli...

21 citations

Journal ArticleDOI
TL;DR: The results suggest the interpretation that the Idc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.
Abstract: Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetrically with increasing I dc . The results suggest the interpretation that the I dc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.

21 citations


Network Information
Related Topics (5)
Magnetization
107.8K papers, 1.9M citations
93% related
Band gap
86.8K papers, 2.2M citations
91% related
Quantum dot
76.7K papers, 1.9M citations
90% related
Thin film
275.5K papers, 4.5M citations
89% related
Photoluminescence
83.4K papers, 1.8M citations
88% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202330
202252
202139
202038
201937
201837