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Colossal magnetoresistance

About: Colossal magnetoresistance is a research topic. Over the lifetime, 3658 publications have been published within this topic receiving 130104 citations.


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Journal ArticleDOI
TL;DR: In this article, the authors studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHefSiO thin granular films.
Abstract: We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films Maximum magnetoresistance ratios at room temperature of 2% and 32% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively The magnetoresistance shows a decrease with temperature, which cannot be explained by spin-dependent tunneling only We propose that spin-flip scattering in the amorphous FeHf(Si)O matrix causes this decrease as function of temperature A two current model for the tunnel magnetoresistance, taking into account spin-flip scattering, is presented which can describe the observed temperature dependence of the magnetoresistance

20 citations

Journal ArticleDOI
TL;DR: In this paper, a low temperature combustion synthesis from a mixture of nitrates and fuel, as applied to Sr2FeMoO6, is described, which yields ceramics with a fine crystallite size of 100-200 nm and a room temperature resistivity of 200 µΩ m.
Abstract: A novel method of producing magnetoresistive oxides is described, which involves low temperature combustion synthesis from a mixture of nitrates and fuel, as applied to Sr2FeMoO6. The method yields ceramics with a fine crystallite size of 100–200 nm and a room temperature resistivity of 200 µΩ m. Low field magnetoresistance (6.5% in 0.1 T) is enhanced dramatically compared to samples prepared by conventional solid-state reaction due to the efficient intergrain tunnelling arising from the high density of grain boundaries. Magnetoresistance in low fields is essentially independent of temperature from 5–300 K, and it persists up to 350 K, providing the prospect of sensor applications in an extended temperature range.

20 citations

Journal ArticleDOI
TL;DR: Raman scattering spectra have been investigated for a single crystal of Sm 1-x Sr x MnO 3 (x = 0.45) showing prototypical colossal magnetoresistance (CMR).
Abstract: Raman scattering spectra have been investigated for a single crystal of Sm 1- x Sr x MnO 3 ( x =0.45) showing prototypical colossal magnetoresistance (CMR). The emergence of broad phonon bands abov...

20 citations

Journal ArticleDOI
01 Dec 2001-EPL
TL;DR: In this paper, resistive properties of point contacts in normal metal-manganite heterojunctions have been investigated on the base of La0.7Sr0.3MnO3, La 0.8Ca0.2MnNO3 single crystals.
Abstract: Resistive properties of point contacts in normal-metal-manganite heterojunctions have been investigated on the base of La0.7Sr0.3MnO3, La0.8Sr0.2MnO3, La0.8Ca0.2MnO3 single crystals. At considerable current levels the current-voltage characteristics of point contacts exhibit features in the form of resistance peaks at lower temperatures. Colossal magnetoresistance also considerably increases under transport current in the investigated heterojunctions. It has been assumed that the observed current switching effects are due to phase separation of manganites under the electric current.

20 citations

Journal ArticleDOI
TL;DR: In this article, the temperature dependence of the giant magnetoresistance (GMR) ratio, resistance and exchange-biasing field for a spin valve comprising an Ir19Mn81-biased artificial antiferromagnet (AAF) has been studied up to 325°C.
Abstract: The temperature dependence of the giant magnetoresistance (GMR) ratio, resistance and exchange-biasing field for a spin valve comprising an Ir19Mn81-biased artificial antiferromagnet (AAF) has been studied up to 325 °C. Up to 200–250 °C the temperature effects are reversible, at higher temperatures gradual irreversible changes are observed, probably due to atomic diffusion. The magnetoresistance effect is even at 200 °C still higher than for anisotropic magnetoresistance sensors at room temperature. The resistance of the multilayer shows a maximum around 250 °C. We found that this is due to the peculiar behavior of Ir–Mn, which has a negative temperature coefficient of the resistance. This provides a possibility to tune the temperature coefficient for the complete multilayer by varying the thickness of the Ir–Mn layer. The relative decrease of the exchange-biasing field as a function of temperature is much smaller for spin valves with AAF than for conventional spin valves (without AAF). Furthermore, it wa...

20 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202330
202252
202139
202038
201937
201837