Topic
Colossal magnetoresistance
About: Colossal magnetoresistance is a research topic. Over the lifetime, 3658 publications have been published within this topic receiving 130104 citations.
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TL;DR: In this article, the authors discuss novel routes to multiferroics, giving specific examples of materials along with their characteristics, as well as their characteristics of magnetic ferroelectricity induced by frustrated magnetism.
Abstract: Multiferroic materials are those which possess both ferroelectric and ferromagnetic properties. Clearly, there is a contradiction here since ferromagnetism requires d-electrons while ferroelectricity generally occurs only in the absence of d-electrons. Several multiferroics demonstrating magnetoelectric coupling effects have, however, been discovered in the past few years, but they generally make use of alternative mechanisms in attaining these properties. Several new ideas and concepts have emerged in the past two years, typical of them being magnetic ferroelectricity induced by frustrated magnetism, lone pair effect, charge-ordering and local non-centrosymmetry. Charge-order driven magnetic ferroelectricity is interesting in that it would be expected to occur in a large number of rare earth manganites, $Ln_{1-x}A_xMnO_3$ (A = alkaline earth), well known for colossal magnetoresistance, electronic phase separation and other properties. In this article, we discuss novel routes to multiferroics, giving specific examples of materials along with their characteristics.
154 citations
TL;DR: In this article, dilute fluorinated graphene was created using a clean, controlled, and reversible approach, and the zero-field resistance was reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation.
Abstract: Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by quantum interference.
154 citations
TL;DR: In this article, the authors trace how the ground state evolves with doping and give a self-consistent analysis of various thermodynamic, optical and transport properties of metallic manganites, isotope effect, etc.
150 citations
TL;DR: In this paper, a simple phenomenological model was proposed to describe the colossal magnetoresistance (CMR) effect and calculated the resistivity as functions of temperature and magnetic field, which not only qualitatively accounts for some main features related to the CMR effect but also quantitatively agrees with the experimental observations.
Abstract: La0.67Ca0.33Mn1−xCuxO3 (x=0 and 0.15) epitaxial thin films were grown on the (100) LaAlO3 substrates, and the temperature dependence of their resistivity was measured in magnetic fields up to 12 T by a four-probe technique. We found that the competition between the ferromagnetic metallic (FM) and paramagnetic insulating (PI) phases plays an important role in the observed colossal magnetoresistance (CMR) effect. Based on a scenario that the doped manganites approximately consist of phase-separated FM and PI regions, a simple phenomenological model was proposed to describe the CMR effect. Using this model, we calculated the resistivity as functions of temperature and magnetic field. The model not only qualitatively accounts for some main features related to the CMR effect, but also quantitatively agrees with the experimental observations.
150 citations
TL;DR: Temperature-dependent measurements of the resistance and anisotropic magnetoresistance highlight the large, entangled tunabilities of the ordinary charge and spin-dependent transport in a spintronic device utilizing the antiferromagnet semiconductor.
Abstract: The change in the electrical properties of a ferromagnetic under the influence of a magnetic field depends strongly on field orientation Marti et al now show that this so-called anisotropic magnetoresistance is also evident in antiferromagnetic semiconductors, making them useful in spintronics
147 citations