Topic
Colossal magnetoresistance
About: Colossal magnetoresistance is a research topic. Over the lifetime, 3658 publications have been published within this topic receiving 130104 citations.
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TL;DR: This work uses hydrostatic pressure to smoothly alter the band structure of Ag-rich and Ag-deficient samples of semiconducting Ag(2 +/-delta)Te of fixed stoichiometry and disorder and finds that the magnetoresistance spikes and the linear field dependence emerges when the bands cross and the Hall coefficient changes sign.
Abstract: Optimally doped silver selenide and silver telluride exhibit linear positive magnetoresistance over decades in magnetic field and on a scale comparable to the colossal magnetoresistance compounds We use hydrostatic pressure to smoothly alter the band structure of Ag-rich and Ag-deficient samples of semiconducting Ag_(2±δ)Te of fixed stoichiometry and disorder We find that the magnetoresistance spikes and the linear field dependence emerges when the bands cross and the Hall coefficient changes sign
139 citations
TL;DR: For a La 0.8Sr0.2MnO3 film with a grain boundary angle θ=36.8° a field independent component r0=4.1×10−6
Abstract: Epitaxial ferromagnetic manganite films have been sputtered on bicrystal substrates. Their magnetoresistance was measured as a function of magnetic field and temperature. The grain boundary magnetoresistance at low temperature is separated from the intrinsic magnetoresistance near the Curie temperature. The grain boundary magnetoresistance peaks at about 100 Oe and saturates at about 2 kOe. For a La0.8Sr0.2MnO3 film with a grain boundary angle θ=36.8° a field independent component r0=4.1×10−6 Ω cm2 was separated from a field-dependent component which has its maximum rH=2.3×10−6 Ω cm2 for H of order the coercive field.
139 citations
TL;DR: It is reported that the magnetic Néel temperature of the multiferroic compound BiFeO(3) is suppressed to around room temperature by heteroepitaxial misfit strain, providing a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications.
Abstract: Strong spin-lattice coupling in condensed matter gives rise to intriguing physical phenomena such as colossal magnetoresistance and giant magnetoelectric effects. The phenomenological hallmark of such a strong spin-lattice coupling is the manifestation of a large anomaly in the crystal structure at the magnetic transition temperature. Here we report that the magnetic Neel temperature of the multiferroic compound BiFeO(3) is suppressed to around room temperature by heteroepitaxial misfit strain. Remarkably, the ferroelectric state undergoes a first-order transition to another ferroelectric state simultaneously with the magnetic transition temperature. Our findings provide a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications.
138 citations
TL;DR: In this article, spin-dependent perpendicular transport in the magnetic trilayer junction structure La0.67Sr0.33MnO3/SrTiO3 was reported.
Abstract: We report spin-dependent perpendicular transport in the magnetic trilayer junction structure La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3. Large (factor of 5) changes of magnetoresistance induced by a field of ∼200 Oe are observed at 4.2 K. Junction I–V characteristics at low temperatures are consistent with a metal–insulator–metal tunneling process with a large spin-polarization factor of 0.81 for the conduction electrons. Above 100 K, a variable range-hopping conduction shunts out the magnetoresistance contribution. This second conduction channel comes from the impurity states within SrTiO3 barrier and therefore is not an intrinsic limit to the magnetoresistance performance of the device at high temperatures.
138 citations
TL;DR: In this paper, the Shubnikov-de Haas oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe2 single crystals, and four Fermi surfaces are identified, and two of them are found to persist to high pressure.
Abstract: The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe2 single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas oscillations, four Fermi surfaces are identified, and two of them are found to persist to high pressure. The sizes of these two pockets are comparable, but show increasing difference with pressure. At 0.3 K and in 14.5 T, the magnetoresistance decreases drastically from 1.25×10(5)% under ambient pressure to 7.47×10(3)% under 23.6 kbar, which is likely caused by the relative change of Fermi surfaces. These results support the scenario that the perfect balance between the electron and hole populations is the origin of the extremely large magnetoresistance in WTe2.
138 citations