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Colossal magnetoresistance

About: Colossal magnetoresistance is a research topic. Over the lifetime, 3658 publications have been published within this topic receiving 130104 citations.


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TL;DR: A new two band model with strong correlations and a dynamical mean-field theory calculation of equilibrium and transport properties are described that explain the insulator metal transition and colossal magnetoresistance quantitatively, as well as other consequences of two state coexistence.
Abstract: The persistent proximity of insulating and metallic phases, a puzzling characteristic of manganites, is argued to arise from the self-organization of the twofold degenerate e(g) orbitals of Mn into localized Jahn-Teller (JT) polaronic levels and broad band states due to the large electron-JT phonon coupling present in them. We describe a new two band model with strong correlations and a dynamical mean-field theory calculation of equilibrium and transport properties. These explain the insulator metal transition and colossal magnetoresistance quantitatively, as well as other consequences of two state coexistence.

112 citations

Journal ArticleDOI
TL;DR: In this article, the magnetoresistance of compressively strained La0.7Sr0.3MnO3 (LSMO) films in various magnetic states was studied to understand the role of magnetic domain structure on magnetotransport.
Abstract: We have studied the magnetoresistance (MR) of compressively strained La0.7Sr0.3MnO3 (LSMO) films in various magnetic states in order to understand the role of magnetic domain structure on magnetotransport. In thin films of LSMO on (100) LaAlO3, the perpendicular magnetic anisotropy results in perpendicularly magnetized domains with fine scale ∼200 nm domain subdivision, which we image directly at room temperature using magnetic force microscopy. The main MR effects can be understood in terms of bulk colossal MR and anisotropic MR. We also find evidence for a small domain wall contribution to the MR, which is an order of magnitude larger than expected from a double exchange model.

112 citations

Journal ArticleDOI
11 May 2006-Nature
TL;DR: A model oxide system based on high-quality heterostructures in which the ferroelectric field effect approach can be studied and field-induced switching from the normal state to the (zero resistance) superconducting state was achieved at a well-defined temperature.
Abstract: Correlated oxides display a variety of extraordinary physical properties including high-temperature superconductivity and colossal magnetoresistance. In these materials, strong electronic correlations often lead to competing ground states that are sensitive to many parameters--in particular the doping level--so that complex phase diagrams are observed. A flexible way to explore the role of doping is to tune the electron or hole concentration with electric fields, as is done in standard semiconductor field effect transistors. Here we demonstrate a model oxide system based on high-quality heterostructures in which the ferroelectric field effect approach can be studied. We use a single-crystal film of the perovskite superconductor Nb-doped SrTiO3 as the superconducting channel and ferroelectric Pb(Zr,Ti)O3 as the gate oxide. Atomic force microscopy is used to locally reverse the ferroelectric polarization, thus inducing large resistivity and carrier modulations, resulting in a clear shift in the superconducting critical temperature. Field-induced switching from the normal state to the (zero resistance) superconducting state was achieved at a well-defined temperature. This unique system could lead to a field of research in which devices are realized by locally defining in the same material superconducting and normal regions with 'perfect' interfaces, the interface being purely electronic. Using this approach, one could potentially design one-dimensional superconducting wires, superconducting rings and junctions, superconducting quantum interference devices (SQUIDs) or arrays of pinning centres.

111 citations

Journal ArticleDOI
TL;DR: The effect of Fe doping on the La1−xCaxMnO3 has been studied in this paper, where no appreciable structure changes have been found in either series.
Abstract: The effect of Fe doping (<20%) on the Mn site in the ferromagnetic (x=0.37) and the antiferromagnetic (x=0.53) phases of La1−xCaxMnO3 has been studied. Upon doping, no appreciable structure changes have been found in either series. However, conduction and ferromagnetism have been consistently suppressed by Fe doping. Colossal magnetoresistance has been shifted to lower temperatures, and in some cases enhanced by Fe doping. These results are not due to the strong lattice effects commonly seen in doping of the La sites. Rather, replacement of Mn3+ by Fe3+ depopulates the hopping electrons, and weakens the double exchange. The effect of Fe doping can be explained in terms of the band structure.

111 citations

Journal ArticleDOI
TL;DR: In this paper, the most important physical properties of manganites of the La-Ca-Mn-O type were analyzed and a discussion of the scientific problems encountered in the physics of the manganite transport was presented, where the main focus was on the peculiarities of these compounds reflected in their crystalline, electronic, and magnetic structures.
Abstract: An attempt is made to analyze the most important physical properties of manganites of the La-Ca-Mn-O type, which exhibit the colossal magnetoresistance effect. The primary focus is on the peculiarities of these compounds which are reflected in their crystalline, electronic, and magnetic structures and which determine the possible mechanisms by which an external magnetic field can exert a substantial influence on the transport characteristics of the current carriers in manganites. The combined effect of these factors is to create the necessary conditions for a metal-insulator phase transition that is sensitive to an external magnetic field. Another major topic in this review is a discussion of the scientific problems confronting the physics of manganites.

111 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202330
202252
202139
202038
201937
201837