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Colossal magnetoresistance

About: Colossal magnetoresistance is a research topic. Over the lifetime, 3658 publications have been published within this topic receiving 130104 citations.


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TL;DR: In this article, the authors reported the observation of extremely large magnetoresistance as 3.0$\times$10$^4$ % measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS.
Abstract: Recently, the extremely large magnetoresistance observed in transition metal telluride, like WTe$_2$, attracted much attention because of the potential applications in magnetic sensor. Here we report the observation of extremely large magnetoresistance as 3.0$\times$10$^4$ % measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (~1.4$\times$10$^4$ %) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the novel magnetic sensors.

75 citations

Journal ArticleDOI
TL;DR: A dramatic and reversible change of the electronic structure is observed on crossing the Curie temperature, including charge localization on and spin-moment increase of Mn, together with Jahn-Teller distortions, both signatures of polaron formation.
Abstract: The temperature dependence of the electronic and atomic structure of the colossal magnetoresistive oxides La1� xSrxMnO3 (x � 0:3, 0.4) has been studied using core and valence level photoemission, x-ray absorption and emission, and extended x-ray absorption fine structure spectroscopy. A dramatic and reversible change of the electronic structure is observed on crossing the Curie temperature, including charge localization on and spin-moment increase of Mn, together with Jahn-Teller distortions, both signatures of polaron formation. Our data are also consistent with a phase-separation scenario.

75 citations

Journal ArticleDOI
TL;DR: In this article, the magnetic and electrical transport properties of Zr doped lanthanum manganite perovskite were investigated using x-ray diffraction, dc magnetic susceptibility, and a four probe method for electrical resistivity and magnetoresistance measurements in the temperature range of 5-400 K.
Abstract: In this study we have investigated the magnetic and electrical transport properties of Zr doped lanthanum manganite perovskite The structural, magnetic, and transport properties of the Zr doped compounds were determined using x-ray diffraction, dc magnetic susceptibility, and a four probe method for electrical resistivity and magnetoresistance measurements in the temperature range of 5–400 K The structure of the compounds was found to be rhombohedral The magnetization versus temperature curves show ferromagnetic regions with the magnetic transition temperatures getting saturated for x⩾007 compounds The resistivity curves show decreasing resistivity with increasing Zr content in the compound The resistivity of the compounds is very high and is explained as due to the localization tendency of the electrons The metal–insulator transition temperature shows a compositional dependence and has additional contributions apart from magnetism The results are explained by the double exchange interaction and M

75 citations

Journal ArticleDOI
TL;DR: In this paper, the magnetotransport properties of laser ablated La07Ce03MnO3 films on LaAlO3, and the effect of varying the ambient oxygen pressure during growth and the film thickness were investigated.
Abstract: La07Ce03MnO3 is a relatively new addition to the family of colossal magnetoresistive manganites, in which the cerium ion is believed to be in the Ce4+ state In this article, we report the magnetotransport properties of laser ablated La07Ce03MnO3 films on LaAlO3, and the effect of varying the ambient oxygen pressure during growth and the film thickness We observe that the transport and magnetic properties of the film depend on the oxygen pressure, surface morphology, film thickness, and epitaxial strain The films were characterized by x-ray diffraction using a four-circle goniometer We observe an increase in the metal-insulator transition temperature with decreasing oxygen pressure This is in direct contrast to the oxygen pressure dependence of La07Ca03MnO3 films and suggests the electron doped nature of the La07Ce03MnO3 system With decreasing film thickness we observe an increase in the metal-insulator transition temperature This is associated with a compression of the unit cell in the a-b plane due to epitaxial strain On codoping with 50% Ca at the Ce site, the system (La07Ca015Ce015MnO3) is driven into an insulating state suggesting that the electrons generated by Ce4+ are compensated by the holes generated by Ca2+, thus making the average valence at the rare-earth site 3+ as in the parent material LaMnO3La07Ce03MnO3 is a relatively new addition to the family of colossal magnetoresistive manganites, in which the cerium ion is believed to be in the Ce4+ state In this article, we report the magnetotransport properties of laser ablated La07Ce03MnO3 films on LaAlO3, and the effect of varying the ambient oxygen pressure during growth and the film thickness We observe that the transport and magnetic properties of the film depend on the oxygen pressure, surface morphology, film thickness, and epitaxial strain The films were characterized by x-ray diffraction using a four-circle goniometer We observe an increase in the metal-insulator transition temperature with decreasing oxygen pressure This is in direct contrast to the oxygen pressure dependence of La07Ca03MnO3 films and suggests the electron doped nature of the La07Ce03MnO3 system With decreasing film thickness we observe an increase in the metal-insulator transition temperature This is associated with a compression of the unit cell in the a-b

75 citations

Journal ArticleDOI
TL;DR: In this article, a cube-on-cube growth of an epitaxial Bi4Ti3O12/CeO2/YSZ/Si heterostructure was revealed.
Abstract: La067(Sr,Ca)033MnO3 (LSCMO) films have been grown by a pulsed-laser deposition technique on Si(001) substrates buffered with Bi4Ti3O12/CeO2/yttrium-stabilized zirconia (YSZ) heteroepitaxial layers X-ray diffraction has revealed cube-on-cube growth of an epitaxial Bi4Ti3O12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the “diagonal-on-side” manner on top of the Bi4Ti3O12 (BTO) template The maximum temperature coefficient of resistivity (TCR)=44% K−1 and colossal magnetoresistance (CMR) Δρ/ρ∼29% kOe−1 have been reached at 294 K This was achieved due to the successive improvement of c-axis orientation of the layers: Full widths at half-maximum 065°, 058°, 065°, 113°, and 018° in LSCMO/BTO/CeO2/YSZ/Si stack, respectively As a prototype of an uncooled bolometer, heteroepitaxial CMR structure on Si demonstrates, at 294 K, the noise equivalent temperature difference of 12 μK/√Hz@30 Hz

75 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202330
202252
202139
202038
201937
201837